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MMBT5551-7

产品描述Bipolar Transistors - BJT SS NPN 300mW
产品类别半导体    分立半导体   
文件大小77KB,共4页
制造商Diodes
官网地址http://www.diodes.com/
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MMBT5551-7概述

Bipolar Transistors - BJT SS NPN 300mW

MMBT5551-7规格参数

参数名称属性值
产品种类
Product Category
Bipolar Transistors - BJT
制造商
Manufacturer
Diodes
RoHSNo
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-23-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max160 V
Collector- Base Voltage VCBO180 V
Emitter- Base Voltage VEBO6 V
Maximum DC Collector Current0.6 A
Gain Bandwidth Product fT300 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C
Continuous Collector Current0.6 A
DC Collector/Base Gain hfe Min80
DC Current Gain hFE Max250
高度
Height
1 mm
长度
Length
3.05 mm
最小工作温度
Minimum Operating Temperature
- 55 C
系列
Packaging
Reel
系列
Packaging
Cut Tape
Pd-功率耗散
Pd - Power Dissipation
300 mW
工厂包装数量
Factory Pack Quantity
3000
宽度
Width
1.4 mm
单位重量
Unit Weight
0.000282 oz

文档预览

下载PDF文档
MMBT5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT5401)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 3)
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
C
B
E
Top View
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
180
160
6.0
600
Unit
V
V
V
mA
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
MMBT5551
Document number: DS30061 Rev. 11 - 2
1 of 4
www.diodes.com
August 2008
© Diodes Incorporated

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