MMBT5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
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Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT5401)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 3)
Mechanical Data
•
•
•
•
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Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
C
B
E
Top View
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
180
160
6.0
600
Unit
V
V
V
mA
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
MMBT5551
Document number: DS30061 Rev. 11 - 2
1 of 4
www.diodes.com
August 2008
© Diodes Incorporated
MMBT5551
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
4. Short duration pulse test used to minimize self-heating effect.
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
180
160
6.0
⎯
⎯
80
80
30
⎯
⎯
⎯
50
100
⎯
Max
⎯
⎯
⎯
50
50
⎯
250
⎯
0.15
0.20
1.0
6.0
250
300
8.0
Unit
V
V
V
nA
μA
nA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100°C
V
EB
= 4.0V, I
C
= 0
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= 10V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 200μA,
R
S
= 1.0kΩ, f = 1.0kHz
h
FE
V
CE(SAT)
V
BE(SAT)
C
obo
h
fe
f
T
nF
⎯
V
V
pF
⎯
MHz
dB
400
350
P
D
, POWER DISSIPATION (mW)
1,000
V
CE
= 5V
250
200
150
100
50
0
0
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
25
h
FE
, DC CURRENT GAIN
300
T
A
= 150°C
100
T
A
= 25°C
T
A
= -50°C
10
1
100
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
1
MMBT5551
Document number: DS30061 Rev. 11 - 2
2 of 4
www.diodes.com
August 2008
© Diodes Incorporated
MMBT5551
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
0.15
0.14
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
1
100
10
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
V
CE
= 5V
0.9
T
A
= -50°C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
T
A
= 150°C
T
A
= 25°C
10
1
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
100
10
1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Gain-Bandwidth Product vs.
Collector Current
Ordering Information
Part Number
MMBT5551-7-F
Notes:
(Note 5)
Case
SOT-23
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K4N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
K4N
Date Code Key
Year
1998
Code
J
Month
Code
Jan
1
1999
K
2000
L
Feb
2
2001
M
Mar
3
2002
N
2003
P
Apr
4
2004
R
May
5
2005
S
YM
2006
T
Jun
6
2007
U
Jul
7
2008
V
2009
W
Aug
8
2010
X
Sep
9
2011
Y
2012
Z
Oct
O
2013
A
Nov
N
2014
B
2015
C
Dec
D
MMBT5551
Document number: DS30061 Rev. 11 - 2
3 of 4
www.diodes.com
August 2008
© Diodes Incorporated
MMBT5551
Package Outline Dimensions
A
B C
H
K
D
J
F
G
L
M
K1
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
MMBT5551
Document number: DS30061 Rev. 11 - 2
4 of 4
www.diodes.com
August 2008
© Diodes Incorporated