IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYC15X-600
Rectifier diode, hyperfast
Rev. 01 — 29 November 2007
Product data sheet
1. Product profile
1.1 General description
Hyperfast, epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features
I
Extremely fast switching
I
Low reverse recovery current
I
Reduces switching loss in associated
MOSFET
I
Low thermal resistance
I
Isolated package
1.3 Applications
I
Half-bridge or full-bridge switched-mode
I
Continuous Current Mode (CCM) Power
power supplies
Factor Correction (PFC)
I
Half-bridge lighting ballasts
1.4 Quick reference data
I
V
RRM
≤
600 V
I
V
F
= 1.32 V (typ)
I
I
F(AV)
≤
15 A
I
t
rr
= 19 ns (typ)
2. Pinning information
Table 1.
Pin
1
2
mb
Pinning
Description
cathode (k)
anode (a)
mounting base; isolated
mb
k
a
001aaa020
Simplified outline
Symbol
1
2
SOD113 (2-lead TO-220F)
NXP Semiconductors
BYC15X-600
Rectifier diode, hyperfast
3. Ordering information
Table 2.
Ordering information
Package
Name
BYC15X-600
TO-220F
Description
Version
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOD113
2-lead TO-220 ‘full pack’
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
junction temperature
square waveform;
δ
= 1.0; T
h
≤
100
°C
square waveform;
δ
= 0.5; T
h
≤
25
°C
square waveform;
δ
= 0.5; T
h
≤
25
°C;
t
p
= 25
µs
t = 10 ms; sinusoidal waveform
t = 8.3 ms; sinusoidal waveform
Conditions
Min
-
-
-
-
-
-
-
−40
-
Max
600
600
500
15
30
200
220
+150
150
Unit
V
V
V
A
A
A
A
°C
°C
BYC15X-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 November 2007
2 of 10
NXP Semiconductors
BYC15X-600
Rectifier diode, hyperfast
5. Thermal characteristics
Table 4.
Symbol
R
th(j-h)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
Typ
-
55
Max
3.6
-
Unit
K/W
K/W
thermal resistance from junction to heatsink with heatsink compound;
see
Figure 1
thermal resistance from junction to ambient in free air
10
Z
th(j-h)
(K/W)
1
001aah190
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 5.
Isolation limiting values and characteristics
T
h
= 25
°
C unless otherwise specified.
Symbol
V
isol(RMS)
Parameter
RMS isolation voltage
Conditions
from all terminals to external heatsink;
f = 50 Hz to 60 Hz; sinusoidal waveform;
relative humidity
≤
65 %; clean and dust free
from pin 1 (cathode) to external heatsink;
f = 1 MHz
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYC15X-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 November 2007
3 of 10
NXP Semiconductors
BYC15X-600
Rectifier diode, hyperfast
7. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 15 A; T
j
= 150
°C;
see
Figure 2
I
F
= 30 A; T
j
= 150
°C;
see
Figure 2
I
F
= 15 A; see
Figure 2
I
R
reverse current
V
R
= 600 V
V
R
= 500 V; T
j
= 100
°C
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A to V
R
= 30 V; dI
F
/dt = 50 A/µs;
see
Figure 3
I
F
= 15 A to V
R
= 400 V; dI
F
/dt = 500 A/µs;
see
Figure 3
T
j
= 25
°C
T
j
= 100
°C
I
RM
peak reverse recovery
current
I
F
= 15 A to V
R
= 400 V; T
j
= 125
°C;
see
Figure 3
dI
F
/dt = 50 A/µs
dI
F
/dt = 500 A/µs
V
FR
forward recovery
voltage
I
F
= 15 A; dI
F
/dt = 100 A/µs; see
Figure 4
-
-
-
3.0
9.5
8
7.5
12
11
A
A
V
-
-
19
32
-
40
ns
ns
-
35
55
ns
Min
-
-
-
-
-
Typ
1.32
1.64
1.89
12
1.1
Max
2.03
2.34
2.9
200
3.0
Unit
V
V
V
µA
mA
Static characteristics
BYC15X-600_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 November 2007
4 of 10
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
