Freescale Semiconductor
Technical Data
Document Number: MRF9080
Rev. 8, 10/2008
N - Channel Enhancement - Mode Lateral MOSFET
Designed for GSM 900 MHz frequency band, the high gain and broadband
performance of this device make it ideal for large - signal, common - source
amplifier applications in 26 volt base station equipment.
•
Typical Performance for GSM Frequencies, 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9080LR3
920 - 960 MHz, 75 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465 - 06, STYLE 1
NI - 780
Table 1. Maximum Ratings
Rating
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
250
1.43
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
=
25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.7
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF9080LR3
1
RF Device Data
Freescale Semiconductor
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
RF Power Field Effect Transistor
LIFETIME BUY
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vds, V
GS
= 0)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 )
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 700 mAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.0
—
—
—
—
3.7
0.19
8.0
4.0
—
0.4
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
LIFETIME BUY
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6 Adc)
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 960 MHz)
Common - Source Amplifier Power Gain @ 70 W (Min)
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 960 MHz)
Drain Efficiency @ P
out
= 70 W
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 960 MHz)
Drain Efficiency @ P1dB
(V
DD
= 26 Vdc, I
DQ
= 600 mA, f = 960 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 70 W, I
DQ
= 600 mA, f = 960 MHz)
Dynamic Characteristics
(1)
C
oss
C
rss
—
—
73
2.9
—
—
pF
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
P
1dB
G
ps
η1
η2
IRL
68
17
47
—
9.5
75
18.5
52
55
12.5
—
20
—
—
—
W
dB
%
%
dB
1. Part is internally input matched.
MRF9080LR3
2
RF Device Data
Freescale Semiconductor
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
V
GG
R3
+
C7
R2
C6
R1
C18
+
C17
V
DD
C5
C11 C12 C13
DUT
C15
C14
C8
C9
C10
C16
C1
RF
INPUT
C2
C3
RF
OUTPUT
C4
LIFETIME BUY
Figure 1. Broadband GSM 900 Test Circuit Schematic
Table 5. Broadband GSM 900 Test Circuit Component Designations and Values
Part
C1
C2
C3
C4, C5, C9, C10, C12, C13
C6, C16, C17
C7, C18
C8, C11
C14
C15
R1, R2, R3
Raw PCB Material
Description
4.7 pF Chip Capacitor
2.7 pF Chip Capacitor
1.5 pF Chip Capacitor
5.6 pF Chip Capacitors
22 pF Chip Capacitors
10
μF,
35 V Tantalum Chip Capacitors
10 pF Chip Capacitors
0.8 pF Chip Capacitor
8.2 pF Chip Capacitor
1.0 kΩ, 1/8 W Chip Resistors
30 mil Glass
Teflon
®
,
ε
r
= 2.55
Part Number
ATC100B4R7BT500XT
ATC100B2R7BT500XT
ATC100B1R5BT500XT
ATC100B5R6CT500XT
ATC100B220GT500XT
T491D106M035AT
ATC100B100JT500XT
ATC100B0R8BT500XT
ATC100B8R2GT500XT
CRCW08051001FKEA
TLX8 - 0300
Manufacturer
ATC
ATC
ATC
ATC
ATC
Kemet
ATC
ATC
ATC
Vishay
Taconic
MRF9080LR3
RF Device Data
Freescale Semiconductor
3
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
C7
C18
R3
R2
C6
V
GG
V
DD
C17
RF INPUT
C1
C2
C3
R1 C5
WB1
C4
C11 C12 C13
WB2
RF OUTPUT
C15
C16
C14
C8 C9 C10
MRF9080
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. Broadband GSM 900 Test Circuit Component Layout
MRF9080LR3
4
RF Device Data
Freescale Semiconductor
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
LIFETIME BUY
CUT OUT AREA
V
GG
+
C6
U1
R1
C5
R2
V
DD
+
C9
R3
P1
R4
T1
+
C4
C3
C15
R5
R6
C7
DUT
C10
C13
C14
RF
OUTPUT
RF
INPUT
C1
C2
C8
C11
C12
Figure 3. Broadband GSM 900 Optimized Demo Board Schematic
Table 6. Broadband GSM 900 Optimized Demo Board Component Designations and Values
Part
C1
C2
C3, C15
C4, C6
C5
C7, C8
C9
C10, C11
C12, C13
C14
P1
R1
R2, R5, R6
R3
R4
T1
U1
Description
4.7 pF Chip Capacitor, ACCU - P
3.9 pF Chip Capacitor, ACCU - P
22 pF Chip Capacitors, ACCU - P
22
mF,
35 V Tantalum Chip Capacitors
1
mF
Chip Capacitor, ACCU - P
5.6 pF Chip Capacitors, ACCU - P
220
mF,
63 V Electrolytic Capacitor
3.3 pF Chip Capacitors, ACCU - P
2.2 pF Chip Capacitors, ACCU - P
4.7 pF Chip Capacitor
5.0 kΩ Potentiometer CMS Cermet Multi - turn
10
Ω,
1/8 W Chip Resistor
1 kΩ, 1/8 W Chip Resistor
1.2 kΩ, 1/8 W Chip Resistor
2.2 kΩ, 1/8 W Chip Resistor
Bipolar NPN Transistor, SOT - 23
Voltage Regulator, Micro - 8
Substrate = Taconic RF35, Thickness 0.5 mm
Part Number
08051J4R7CBS
08051J3R9CBS
08051J221CBS
T491X226K035AS
08053105
08051J5R6CBS
2222 - 136 - 68221
08051J3R3CBS
08051J2R2CBS
ATC100B4R7JT500XT
3224W
CRCW080510R0FKEA
CRCW08051001FKEA
CRCW08051201FKEA
CRCW08052201FKEA
BC847ALT1G
LP2951ACDMR2G
Manufacturer
AVX
AVX
AVX
Kemet
AVX
AVX
Vishay
AVX
AVX
ATC
Bourns
Vishay
Vishay
Vishay
Vishay
ON Semiconductor
ON Semiconductor
MRF9080LR3
RF Device Data
Freescale Semiconductor
5
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
LIFETIME BUY
DSP 与 ARM 处理器
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