CY62148DV30
4-Mbit (512 K × 8) MoBL
®
Static RAM
4-Mbit (512 K × 8) MoBL
®
Static RAM
Features
■
Functional Description
The CY62148DV30
[1]
is a high-performance CMOS static RAM
organized as 512K words by 8 bits. This device features
advanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life™ (MoBL
) in portable
applications such as cellular telephones. The device also has an
automatic power-down feature that significantly reduces power
consumption. The device can be put into standby mode reducing
power consumption when deselected (CE HIGH).The eight input
and output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when:
■
■
■
Temperature Ranges
❐
Industrial: –40 °C to 85 °C
Very high speed: 55 ns
❐
■
Wide voltage range: 2.20 V–3.60 V
■
Pin-compatible with CY62148CV25, CY62148CV30 and
CY62148CV33
Ultra low active power
❐
❐
■
Typical active current: 1.5 mA at f = 1 MHz
Typical active current: 8 mA at f = f
max
(55-ns speed)
■
■
■
■
Ultra low standby power
Easy memory expansion with CE, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed/power
Available in Pb-free 32-pin Small-outline integrated circuit
(SOIC package)
Deselected (CE HIGH)
Outputs are disabled (OE HIGH)
When the write operation is active(CE LOW and WE LOW)
■
Write to the device by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. Data on the eight I/O pins (I/O
0
through I/O
7
)
is then written into the location specified on the address pins (A
0
through A
18
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under
these conditions, the contents of the memory location specified
by the address pins will appear on the I/O pins.
For a complete list of related documentation, click
here.
Logic Block Diagram
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
CE
WE
OE
Data in Drivers
I/O
0
I/O
1
ROW DECODER
SENSE AMPS
I/O
2
I/O
3
I/O
4
I/O
5
512K x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
Note
1. For best practice recommendations, refer to the Cypress application note “System
Design Guidelines”
on
http://www.cypress.com.
A
13
A
14
A
15
A
16
A
17
A
18
Cypress Semiconductor Corporation
Document Number: 38-05341 Rev. *I
•
198 Champion Court
•
San Jose
,
CA 95134-1709
• 408-943-2600
Page 1 of 15
CY62148DV30
Contents
Pin Configuration ............................................................. 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Ordering Information ...................................................... 11
Ordering Code Definitions ......................................... 11
Package Diagrams .......................................................... 12
Acronyms ........................................................................ 13
Document Conventions ................................................. 13
Units of Measure ....................................................... 13
Document History Page ................................................. 14
Sales, Solutions, and Legal Information ...................... 15
Worldwide Sales and Design Support ....................... 15
Products .................................................................... 15
PSoC® Solutions ...................................................... 15
Cypress Developer Community ................................. 15
Technical Support ..................................................... 15
Document Number: 38-05341 Rev. *I
Page 2 of 15
CY62148DV30
Pin Configuration
Figure 1. 32-pin SOIC pinout
Top View
A
17
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A
15
A
18
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
Product Portfolio
Power Dissipation
Product
Range
Min
CY62148DV30LL Industrial
2.2
V
CC
Range (V)
Typ
[2]
3.0
Max
3.6
55
Speed
(ns)
Operating I
CC
(mA)
f = 1 MHz
Typ
[2]
1.5
Max
3
8
f = f
max
Typ
[2]
Max
10
Standby I
SB2
(A)
Typ
[2]
2
Max
8
Note
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
Document Number: 38-05341 Rev. *I
Page 3 of 15
CY62148DV30
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature
with power applied ..................................... 55 °C to +125 °C
Supply voltage
to ground potential
[3, 4]
...............–0.3 V to V
CC(max)
+ 0.3 V
DC voltage applied to outputs
in High Z state
[3, 4]
......................–0.3 V to V
CC(max)
+ 0.3 V
DC input voltage
[3, 4]
...................–0.3 V to V
CC(max)
+ 0.3 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(per MIL-STD-883, method 3015) ......................... > 2001 V
Latch-up current .................................................... > 200 mA
Operating Range
Product
CY62148DV30LL
Range
Industrial
Ambient
Temperature
–40 °C to +85 °C
V
CC
[5]
2.2 V to
3.6 V
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
V
CC
operating supply current
Test Conditions
I
OH
= –0.1 mA
I
OH
= –1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
V
CC
= 2.20 V
V
CC
= 2.70 V
V
CC
= 2.20 V
V
CC
= 2.70 V
55 ns
Min
2.0
2.4
–
–
1.8
2.2
–0.3
–0.3
–1
–1
–
–
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
Typ
[2]
–
–
–
–
–
–
–
–
–
–
8
1.5
2
Max
–
–
0.4
0.4
V
CC
+ 0.3
V
CC
+ 0.3
0.6
0.8
+1
+1
10
3
8
Unit
V
V
V
V
V
V
V
V
A
A
mA
mA
A
V
CC
= 2.2 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 2.2 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
GND < V
I
< V
CC
GND < V
O
< V
CC
, output disabled
f = f
max
= 1/t
RC
f = 1 MHz
I
SB1
Automatic CE Power-down
current – CMOS inputs
CE > V
CC
0.2
V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V),
f = f
max
(address and data only),
f = 0 (OE, and WE), V
CC
= 3.60 V
CE > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= 3.60 V
I
SB2
Automatic CE Power-down
current – CMOS inputs
–
2
8
A
Notes
3. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
4. V
IH(max)
= V
CC
+0.75 V for pulse durations less than 20 ns.
5. Full device AC operation assumes a 100
s
ramp time from 0 to V
CC(min)
and 200
s
wait time after V
CC
stabilization.
Document Number: 38-05341 Rev. *I
Page 4 of 15
CY62148DV30
Capacitance
Parameter
[7]
C
IN
C
OUT
Description
Input capacitance
Output capacitance
Test Conditions
T
A
= 25 °C, f = 1 MHz, V
CC
= V
CC(typ)
Max
10
10
Unit
pF
pF
Thermal Resistance
Parameter
[7]
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Still air, soldered on a 3 x 4.5 inch, four-layer printed circuit
board
SOIC
55
22
Unit
C/W
C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
R1
V
CC
OUTPUT
50 pF
INCLUDING
JIG AND
SCOPE
R2
V
CC
GND
10%
ALL INPUT PULSES
90%
90%
10%
Fall time: 1 V/ns
Rise Time: 1 V/ns
Equivalent to:
THÉVENIN EQUIVALENT
R
TH
V
TH
OUTPUT
Parameters
R1
R2
R
TH
V
TH
2.5 V (2.2 V – 2.7 V)
16667
15385
8000
1.20
3.0 V (2.7 V – 3.6 V)
1103
1554
645
1.75
Unit
V
Document Number: 38-05341 Rev. *I
Page 5 of 15
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