Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
HEXFET Power MOSFET
IRLR7821PbF
IRLU7821PbF
®
10m
:
PD - 95091B
V
DSS
R
DS(on)
max
30V
Qg
10nC
D-Pak
I-Pak
IRLR7821PbF IRLU7821PbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
Units
V
f
47
f
65
260
75
37.5
± 20
A
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W
W/°C
°C
0.50
-55 to + 175
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
2.0
50
110
Units
°C/W
gÃ
–––
–––
–––
Notes
through
are on page 11
www.irf.com
1
10/02/06
IRLR/U7821PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
46
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
23
7.5
9.5
–––
-5.3
–––
–––
–––
–––
–––
10
2.0
1.2
2.5
4.3
3.7
8.5
11
4.2
10
3.2
1030
360
120
–––
–––
10
12.5
–––
–––
1.0
150
100
-100
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ns
nC
nC
V
DS
= 16V
V
GS
= 4.5V
I
D
= 12A
S
nA
V
mV/°C
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
f
= 12A
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 12A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 12A
Clamped Inductive Load
f
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
dh
Typ.
–––
–––
–––
Max.
230
12
7.5
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
–––
26
15
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
65
f
260
1.0
38
23
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ãh
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRLR/U7821PbF
10000
TOP
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
1000
TOP
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
10
10
2.5V
20µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
1
2.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
I
D
= 65A
100
T = 175
J
°
C
R
DS(on)
, Drain-to-Source On Resistance
I
D
, Drain-to-Source Current (A)
1.5
(Normalized)
1.0
10
0.5
T
J
= 25
°
C
V DS= 15V
20µs PULSE WIDTH
1
2.0
4.0
6.0
8.0
10.0
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160 180
V
GS
Gate-to-Source Voltage (V)
,
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRLR/U7821PbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C SHORTED
gs
gd ds
Crss = C
gd
Coss = Cds + Cgd
6
VGS , Gate-to-Source Voltage (V)
ID= 12A
5
4
3
2
1
0
VDS= 24V
VDS= 16V
C, Capacitance(pF)
1000
Ciss
Coss
Crss
100
10
1
10
100
0
2
4
6
8
10
12
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VDS, Drain-to-Source Voltage (V)
10msec
I
SD
, Reverse Drain Current (A)
T
J
= 175
°
C
10
1
T
J
= 25
°
C
0.1
0.0
0.5
1.0
V
GS
= 0 V
1.5
2.0
100
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRLR/U7821PbF
70
2.5
60
VGS(th) Gate threshold Voltage (V)
LIMITED BY PACKAGE
2.0
50
I
D
, Drain Current (A)
40
ID = 250µA
1.5
30
20
1.0
10
0
25
50
75
100
125
150
175
0.5
-75 -50 -25
0
25
50
75 100 125 150 175 200
T
C
, Case Temperature ( °C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
10
(Z
thJC
)
1
D = 0.50
0.20
Thermal Response
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
