Freescale Semiconductor
Technical Data
Document Number: MW6IC2240N
Rev. 6, 12/2008
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2240N wideband integrated circuit is designed with on - chip
matching that makes it usable from 2110 to 2170 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD - SCDMA.
Final Application
•
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ1
= 210 mA,
I
DQ2
= 370 mA, P
out
= 4.5 Watts Avg., f = 2157 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 28 dB
Power Added Efficiency — 15%
IM3 @ 10 MHz Offset — - 43 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — - 46 dBc in 3.84 MHz Bandwidth
Driver Application
•
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
300 mA, I
DQ2
= 320 mA, P
out
= 25 dBm, Full Frequency Band (2110 -
2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 29 dB
IM3 @ 10 MHz Offset — - 59 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — - 62 dBc in 3.84 MHz Bandwidth
•
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
•
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 Watts
CW P
out
.
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
•
On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW6IC2240NBR1
MW6IC2240GNBR1
2110 - 2170 MHz, 4.5 W AVG., 28 V
2 x W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW6IC2240NBR1
CASE 1329A - 04
TO - 272 WB - 16 GULL
PLASTIC
MW6IC2240GNBR1
V
DS1
RF
in
RF
out
/V
DS2
GND
V
DS1
NC
NC
NC
RF
in
NC
V
GS1
V
GS2
V
DS1
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out
/
V
DS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
MW6IC2240NBR1 MW6IC2240GNBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
in
Value
- 0.5, +68
- 0.5, +6
- 65 to +150
150
225
23
Unit
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
W - CDMA Application
(P
out
= 4.5 W Avg.)
W - CDMA Application
(P
out
= 40 W CW)
Stage 1, 28 Vdc, I
DQ
= 210 mA
Stage 2, 28 Vdc, I
DQ
= 370 mA
Stage 1, 28 Vdc, I
DQ
= 110 mA
Stage 2, 28 Vdc, I
DQ
= 370 mA
Symbol
R
θJC
1.8
1.0
2.0
0.87
Value
(2,3)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak
Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 210 mA, I
DQ2
= 370 mA,
P
out
= 4.5 W Avg., f = 2157 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel
Bandwidth @
±5
MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain
Power Added Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
IM3
ACPR
IRL
25.5
13.7
—
—
—
28
15
- 43
- 46
- 15
30
—
- 40
- 43
- 10
dB
%
dBc
dBc
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW6IC2240NBR1 MW6IC2240GNBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 210 mA, I
DQ2
= 370 mA,
2110 MHz<Frequency<2170 MHz
Video Bandwidth
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Quiescent Current Accuracy over Temperature
with 18 kΩ Gate Feed Resistors ( - 10 to 85°C)
(1)
Gain Flatness in 30 MHz Bandwidth @ P
out
= 1 W CW
Deviation from Linear Phase in 30 MHz Bandwidth @ P
out
= 1 W CW
Delay @ P
out
= 1 W CW Including Output Matching
Part - to - Part Phase Variation @ P
out
= 1 W CW
VBW
—
30
—
MHz
ΔI
QT
G
F
Φ
Delay
ΔΦ
—
—
—
—
—
±5
0.2
±1
2.8
±9
—
—
—
—
—
%
dB
°
ns
°
Table 6. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 110 mA, I
DQ2
= 370 mA,
2110 MHz<Frequency<2170 MHz
Saturated Pulsed Output Power
(8
μsec(on),
1 msec(off))
P
sat
—
60
—
W
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
3
V
DD2
V
DD1
C13
RF
INPUT
1
2
3 NC
4 NC
5 NC
6
C9
V
GG1
C11
V
GG2
C12
R2
C10
C5
C7
R1
7 NC
8
9
10
11
C2
Quiescent Current
Temperature
Compensation
Z10
NC 13
12
C3
C8
DUT
16
NC 15
Z9
14
Z4
C1
Z5
Z6
Z7
Z8
C4
C6
Z1
Z2
Z3
RF
OUTPUT
Z1*
Z2*
Z3
Z4*
Z5*
Z6*
1.73″
0.47″
0.13″
0.22″
0.34″
0.34″
x 0.090″ Microstrip
x 0.090″ Microstrip
x 0.040″ Microstrip
x 0.315″ Microstrip
x 0.315″ Microstrip
x 0.090″ Microstrip
Z7*
Z8
Z9, Z10
PCB
0.94″ x 0.090″ Microstrip
0.34″ x 0.090″ Microstrip
1.00″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
* Variable for tuning
Figure 3. MW6IC2240NBR1(GNBR1) Test Circuit Schematic
Table 7. MW6IC2240NBR1(GNBR1) Test Circuit Component Designations and Values
Part
C1, C2
C3
C4, C5
C6, C7, C10, C11, C12, C13
C8
C9
R1
R2
Description
1.5 pF Chip Capacitors
1.8 pF Chip Capacitor
6.8 pF Chip Capacitors
4.7
μF
Chip Capacitors
8.2 pF Chip Capacitor
0.5 pF Chip Capacitor
18 kW, 1/4 W Chip Resistor
8.2 kW, 1/4 W Chip Resistor
Part Number
ATC100B1R5BT500XT
ATC100B1R8BT500XT
ATC100B6R8CT500XT
C4532X5R1H475MT
ATC100B8R2CT500XT
ATC100B0R5BT500XT
CRCW12061802FKEA
CRCW12068201FKEA
Manufacturer
ATC
ATC
ATC
TDK
ATC
ATC
Vishay
Vishay
MW6IC2240NBR1 MW6IC2240GNBR1
4
RF Device Data
Freescale Semiconductor
V
DD1
V
DD2
C13
C4
C6
CUT OUT AREA
MW6IC2240, Rev. 1
C3
C1
C9
C8
C2
C10
C12
C11
R1
V
GG1
R2
V
GG2
C5
C7
Figure 4. MW6IC2240NBR1(GNBR1) Test Circuit Component Layout
MW6IC2240NBR1 MW6IC2240GNBR1
RF Device Data
Freescale Semiconductor
5
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