VS-20ETS08SPbF, VS-20ETS12SPbF
www.vishay.com
Vishay Semiconductors
High Voltage Surface Mount Input Rectifier Diode, 20 A
FEATURES
Base
cathode
2
• Meets MSL level 1, per
LF maximum peak of 260 °C
• Designed and qualified
JEDEC
®
-JESD 47
J-STD-020,
• Glass passivated pellet chip junction
according
to
2
3
1
TO-263AB (D
2
PAK)
1
Anode
3
Anode
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Diode variation
TO-263AB (D
2
PAK)
20 A
800 V, 1200 V
1.1 V
300 A
150 °C
Single die
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
The VS-20ETS...SPbF rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
16.3
THREE-PHASE BRIDGE
21
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
20 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
20
800/1200
300
1.1
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETS08SPbF
VS-20ETS12SPbF
V
RRM
, MAXIMUM PEAK REVERSE
VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
I
RRM
AT 150 °C
mA
1
Revision: 12-Feb-16
Document Number: 94340
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS08SPbF, VS-20ETS12SPbF
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.1
10.4
0.85
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-263AB (D
2
PAK)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA (1)
R
thCS
DC operation
For D
2
PAK version
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 40 to 150
1.3
62
0.5
2
0.07
6.0 (5.0)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
20ETS08S
20ETS12S
Note
(1)
When mounted on 1” square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 12-Feb-16
Document Number: 94340
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS08SPbF, VS-20ETS12SPbF
www.vishay.com
Vishay Semiconductors
35
150
Maximum Average Forward
Power Loss (W)
20ETS.. Series
R
thJC
(DC) = 1.3 °C/W
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
Ø
30
25
20
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
15
10
5
0
Ø
Conduction period
20ETS.. Series
T
J
= 150 °C
0
5
10
15
20
25
30°
10
60°
90° 120°
180°
0
2
4
6
8
10 12 14 16 18 20 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
20ETS.. Series
R
thJC
(DC) = 1.3 °C/W
300
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
Ø
Conduction period
Peak Half Sine Wave
Forward Current (A)
250
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
30°
60°
90°
120°
180°
DC
100
20ETS.. Series
50
0
5
10
15
20
25
30
35
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half
Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
30
Maximum Average Forward
Power Loss (W)
25
20
15
10
5
0
RMS limit
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
300
250
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
200
150
Ø
Conduction angle
20ETS.. Series
T
J
= 150 °C
0
4
8
12
16
20
24
100
20ETS.. Series
50
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 12-Feb-16
Document Number: 94340
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS08SPbF, VS-20ETS12SPbF
www.vishay.com
1000
Vishay Semiconductors
Instantaneous Forward Current (A)
T
J
= 25°C
100
T
J
= 150°C
10
20ETS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forwad Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state value
(DC operation)
1
0.1
Single pulse
0.01
0.0001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
20ETS.. Series
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 12-Feb-16
Document Number: 94340
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS08SPbF, VS-20ETS12SPbF
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
20
2
E
3
T
4
S
5
12
6
S
7
TRL PbF
8
9
Vishay Semiconductors product
Current rating (20 = 20 A)
Circuit configuration
E = single diode
Package:
T = TO-220AC
Type of silicon:
S = standard recovery rectifier
Voltage code x 100 = V
RRM
S = TO-220 D
2
PAK (SMD-220) version
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
08 = 800 V
12 = 1200 V
9
-
PbF = Lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-20ETS08SPbF
VS-20ETS08STRRPbF
VS-20ETS08STRLPbF
VS-20ETS12SPbF
VS-20ETS12STRRPbF
VS-20ETS12STRLPbF
QUANTITY PER TUBE
50
800
800
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
13" diameter reel
Antistatic plastic tube
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
www.vishay.com/doc?95409
Revision: 12-Feb-16
Document Number: 94340
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
