RDD022N50
Nch 500V 2A Power MOSFET
Outline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
Features
1) Low on-resistance.
2) Fast switching speed.
500V
5.4
2A
51W
CPT3
(SC-63)
(SOT-428)
(1)
(2)
(3)
Inner
circuit
(1) Gate
(2) Drain
(3) Source
1
BODY DIODE
(1)
(2)
(3)
∗1
3) Gate-source voltage (V
GSS
) guaranteed to be
30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
Packaging
specifications
Packaging
Reel size (mm)
Taping
330
16
2,500
TL
022N50
Application
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Absolute
maximum ratings(T
a
= 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (T
c
= 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
T
c
= 25°C
T
c
= 100°C
Symbol
V
DSS
I
D *1
I
D *1
I
D,pulse *2
V
GSS
E
AS *3
E
AR *4
I
AR *3
P
D
T
j
T
stg
dv/dt
*5
Value
500
2
1
6
30
21
1.5
2.0
51
150
55
to
150
15
Unit
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
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© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2016.02 - Rev.B
RDD022N50
Absolute
maximum ratings
Parameter
Drain - Source voltage slope
Symbol
dv/dt
T
j
= 125°C
Conditions
V
DS
= 400V, I
D
=2A
Data Sheet
Values
50
Unit
V/ns
Thermal
resistance
Values
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
Min.
R
thJC
R
thJA
T
sold
-
-
-
Typ.
-
-
-
Max.
2.41
100
265
°C/W
°C/W
°C
Unit
Electrical
characteristics(T
a
= 25°C)
Values
Parameter
Symbol
Conditions
Min.
Drain - Source breakdown
voltage
Drain - Source avalanche
breakdown voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
500
Typ.
-
Max.
-
V
Unit
V
(BR)DS
V
GS
= 0V, I
D
= 2A
V
DS
= 500V, V
GS
= 0V
-
580
-
V
Zero gate voltage
drain current
I
DSS
T
j
= 25°C
T
j
= 125°C
-
-
-
2.5
0.1
-
-
-
100
1000
100
4.7
A
Gate - Source leakage current
Gate threshold voltage
I
GSS
V
GS (th)
V
GS
=
30V,
V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 1A
nA
V
Static drain - source
on - state resistance
R
DS(on) *6
T
j
= 25°C
T
j
= 125°C
2.0
-
-
4.1
8.8
9.5
5.4
-
-
Gate input resistance
R
G
f = 1MHz, open drain
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© 2015 ROHM Co., Ltd. All rights reserved.
2/13
2016.02 - Rev.B
RDD022N50
Electrical
characteristics(T
a
= 25°C)
Values
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
g
fs *6
C
iss
C
oss
C
rss
C
o(er)
V
GS
= 0V
V
DS
= 0V to 400V
C
o(tr)
t
d(on) *6
t
r *6
t
d(off)
t
f
*6
*6
Data Sheet
Conditions
Min.
V
DS
= 10V, I
D
= 1A
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.6
-
-
-
-
Typ.
1.3
168
27
3
9.55
Max.
-
-
-
-
-
Unit
S
pF
pF
-
14.4
12
17
24
48
-
-
-
ns
48
96
V
DD
⋍
250V, V
GS
= 10V
I
D
= 1A
R
L
= 250
R
G
= 10
-
-
-
-
Gate
Charge characteristics(T
a
= 25°C)
Values
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Symbol
Q
g *6
Q
gs
*6
Conditions
Min.
V
DD
⋍
250V
I
D
= 2A
V
GS
= 10V
V
DD
⋍250V,
I
D
= 2A
-
-
-
-
Typ.
6.7
2.0
2.5
6.2
Max.
-
-
-
-
Unit
nC
Q
gd *6
V
(plateau)
V
*1 Limited only by maximum temperature allowed.
*2 P
W
10s, Duty cycle
1%
*3 L
⋍
500H, V
DD
= 50V, R
G
= 25, starting T
j
= 25°C
*4 L
⋍
500H, V
DD
= 50V, R
G
= 25, starting T
j
= 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
3/13
2016.02 - Rev.B
RDD022N50
Body
diode electrical characteristics
(Source-Drain)(T
a
= 25°C)
Values
Parameter
Symbol
Conditions
Min.
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
I
S
*1
Data Sheet
Unit
Typ.
-
Max.
2
A
-
T
c
= 25°C
I
SM
V
SD
*2
-
V
GS
= 0V, I
S
= 2A
I
S
= 2A
di/dt = 100A/s
-
-
-
-
T
j
= 25°C
-
-
-
437
1.21
5.5
70
6
1.5
-
-
-
-
A
V
ns
C
A
A/s
*6
t
rr *6
Q
rr
*6
I
rrm *6
di
rr
/dt
Typical
Transient Thermal Characteristics
Symbol
R
th1
R
th2
R
th3
R
th4
Value
1.16
2.25
K/W
21.5
46
C
th3
C
th4
0.14
1.24
Unit
Symbol
C
th1
C
th2
Value
0.00194
0.0115
Ws/K
Unit
* Mounted on 25mm x 25mm x 0.8mm
glass epoxy board with both side copper.
Packaging
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© 2015 ROHM Co., Ltd. All rights reserved.
4/13
2016.02 - Rev.B
RDD022N50
Electrical
characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
Fig.2 Maximum Safe Operating Area
100
Operation in this area
is limited by R
DS
(on)
(V
GS
= 10V)
P
W
= 100s
Power Dissipation : P
D
/P
D
max. [%]
100
80
60
40
20
0
0
50
100
150
200
10
Drain Current : I
D
[A]
1
P
W
= 1ms
0.1
P
W
= 10ms
0.01
T
a
=25ºC
Single Pulse
0.001
0.1
1
10
100
1000
Junction Temperature : T
j
[°C]
Drain - Source Voltage : V
DS
[V]
Normalized Transient Thermal Resistance : r
(t)
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
1
0.1
0.01
0.001
0.0001
0.0001 0.001 0.01
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
T
a
= 25ºC
Single Pulse
R
th(ch-a)(t)
=
½
(t)
×R
th(ch-a)
R
th(ch-a)
= 100ºC/W
0.1
1
10
100 1000
Pulse Width : P
W
[s]
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© 2015 ROHM Co., Ltd. All rights reserved.
5/13
2016.02 - Rev.B
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