SUP/SUB85N03-04P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
FEATURES
r
DS(on)
(W)
I
D
(A)
a
85
a
85
a
0.0043 @ V
GS
= 10 V
0.007 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction Temperature
D
TO-263 (D
2
PAK) 100% R
g
Tested
D
TO-220AB
TO-263
(D
2
PAK)
G
DRAIN connected to TAB
G
G D S
Top View
SUP85N03-04P
D S
Top View
SUB85N03-04P
S
N-Channel MOSFET
Ordering Information: SUP85N03-04P (TO-220AB)
SUB85N03-04P (TO-263, D
2
PAK)
SUB85N03-04P—E3 (TO-263, D
2
PAK, Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
85
a
85
a
240
75
280
166
c
3.75
−55
to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
J
ti t A bi t
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
www.vishay.com
Free Air (TO-220AB)
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.9
Unit
_C/W
C/W
1
SUP/SUB85N03-04P
Vishay Siliconix
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State
Drain Source On State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 20 A
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
0.0055
120
0.0035
0.0043
0.0065
0.008
0.007
S
W
30
1
2
3
"100
1
50
250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
d
Total Gate Charge
b
Gate-Source Charge
b
Gate-Drain
Charge
b
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.18
W
I
D
^
85 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 15 V, V
GS
= 10 V, I
D
= 85 A
,
,
0.7
71
15
16
15
12
50
22
23
18
75
35
ns
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
4500
1380
615
3.8
90
nC
W
pF
Turn-On Delay Time
b
Rise Time
b
Turn-Off Delay Time
b
Fall Time
b
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM
Q
rr
I
F
= 85 A, di/dt = 100 A/ms
m
I
F
= 85 A, V
GS
= 0 V
1.1
42
1.4
0.03
85
240
1.5
70
2.1
0.06
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
d. TO-263 (D
2
PAK) only.
www.vishay.com
2
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
SUP/SUB85N03-04P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 thru 6 V
250
5V
200
I
D
−
Drain Current (A)
Transfer Characteristics
200
I
D
−
Drain Current (A)
150
150
100
4V
100
T
C
= 125_C
50
25_C
−55_C
0
50
2, 3 V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
0
1
2
3
4
5
6
V
GS
−
Gate-to-Source Voltage (V)
Transconductance
180
T
C
=
−55_C
r
DS(on)
−
On-Resistance (
W
)
150
g
fs
−
Transconductance (S)
25_C
120
125_C
90
60
30
0
0
20
40
60
80
100
0.006
0.008
On-Resistance vs. Drain Current
V
GS
= 4.5 V
0.004
V
GS
= 10 V
0.002
0.000
0
20
40
60
80
100
120
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
7000
6000
C
−
Capacitance (pF)
5000
4000
3000
2000
1000
0
0
C
rss
6
Capacitance
20
V
DS
= 15 V
I
D
= 85 A
Gate Charge
V
GS
−
Gate-to-Source Voltage (V)
16
C
iss
12
8
C
oss
4
0
12
18
24
30
0
20
40
60
80
100
120
140
V
DS
−
Drain-to-Source Voltage (V)
Q
g
−
Total Gate Charge (nC)
www.vishay.com
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
3
SUP/SUB85N03-04P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 30 A
I
S
−
Source Current (A)
100
Source-Drain Diode Forward Voltage
1.6
r
DS(on)
−
On-Resistance
(Normalized)
1.2
10
T
J
= 150_C
T
J
= 25_C
0.8
0.4
0.0
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
−
Junction Temperature (_C)
V
SD
−
Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
45
Drain Source Breakdown vs.
Junction Temperature
100
I
Dav
(a)
V
(BR)DSS
(V)
I
AV
(A) @ T
A
= 25_C
40
I
D
= 250
mA
10
I
AV
(A) @ T
A
= 150_C
35
1
30
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(Sec)
25
−50
−25
0
25
50
75
100
125
150
175
T
J
−
Junction Temperature (_C)
www.vishay.com
4
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
SUP/SUB85N03-04P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
1000
Safe Operating Area
Limited by r
DS(on)
80
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
10
ms
100
100
ms
1 ms
10
10 ms
100 ms
dc
T
C
= 25_C
Single Pulse
60
40
20
1
0
0
25
50
75
100
125
150
175
T
C
−
Ambient Temperature (_C)
0.1
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Case
Single Pulse
0.01
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
100
Square Wave Pulse Duration (sec)
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
