PD - 94443
IRG4PC60U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies up to 50 kHz in hard switching,
>200 kHz in resonant mode.
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Industry standard TO-247AC package.
C
UltraFast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.6V
@V
GE
= 15V, I
C
= 40A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specified application conditions.
• Designed for best performance when used with IR
Hexfred & IR Fred companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
75
40
300
300
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
----
0.24
----
6 (0.21)
Max.
0.24
----
40
----
Units
°C/W
g (oz)
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1
04/26/02
IRG4PC60U
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 ----
Emitter-to-Collector Breakdown Voltage
T
17
----
V
(BR)ECS
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ---- 0.28
---- 1.7
V
CE(ON)
Collector-to-Emitter Saturation Voltage
---- 1.9
---- 1.6
V
GE(th)
Gate Threshold Voltage
3.0 ----
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
---- -12
g
fe
Forward Transconductance
U
44
59
---- ----
I
CES
Zero Gate Voltage Collector Current
---- ----
---- ----
I
GES
Gate-to-Emitter Leakage Current
---- ----
Max. Units
Conditions
----
V
V
GE
= 0V, I
C
= 250µA
----
V
V
GE
= 0V, I
C
= 1.0A
---- V/°C V
GE
= 0V, I
C
= 1.0mA
2.0
I
C
= 40A
V
GE
= 15V
----
I
C
= 75A
See Fig.2, 5
V
----
I
C
= 40A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
---- mV/°C V
CE
= V
GE
, I
C
= 250µA
----
S
V
CE
≥
100V, I
C
= 40A
250
µA V
GE
= 0V, V
CE
= 600V
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
5000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
Typ.
310
41
110
39
42
200
100
0.28
1.1
1.3
36
42
300
160
2.6
13
5860
370
75
Max. Units
Conditions
320
I
C
= 40A
46
nC
V
CC
= 480V
See Fig. 8
120
V
GE
= 15V
----
----
T
J
= 25°C
ns
I
C
= 40A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0Ω
----
Energy losses include "tail"
----
mJ
See Fig. 10, 11, 13, 14
1.8
----
T
J
= 150°C,
----
I
C
= 40A, V
CC
= 480V
ns
----
V
GE
= 15V, R
G
= 5.0Ω
----
Energy losses include "tail"
----
mJ
See Fig. 13, 14
----
nH
Measured 5mm from package
----
V
GE
= 0V
----
pF
V
CC
= 30V
See Fig. 7
----
ƒ = 1.0MHz
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = TBD µH,
R
G
= 5.0W. (See fig. 13a)
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
U
Pulse width 5.0µs, single shot.
S
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC60U
80
Square wave:
60% of rated
voltage
Triangular wave:
60
Load Current ( A )
Ideal diodes
Clamp voltage:
80% of rated
40
20
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 73W
0.1
1
10
100
0
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
1000
1000
IC, Collector-to-Emitter Current (A)
IC , Collector t-to-Emitter Current (A)
100
T J = 150°C
100
T J = 150°C
10
T J = 25°C
10
1
T J = 25°C
VGE = 15V
20µs PULSE WIDTH
VCC = 10V
5µs PULSE WIDTH
1
4
5
6
7
8
9
10
11
0.1
0.0
1.0
2.0
3.0
4.0
5.0
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4PC60U
80
3.0
V GE = 15V
VGE = 15V
80µs PULSE WIDTH
Maximum DC Collector Current (A)
70
60
50
40
30
20
10
0
25
50
75
100
125
150
VCE , Collector-to Emitter Voltage (V)
IC = 80A
2.0
IC = 40A
IC = 20A
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T C , Case Temperature (°C)
T J , Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs.
Case Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
1
)
thJC
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
Thermal Response (Z
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
J
= P
DM
0.001
0.00001
t
1
/ t
2
x Z
thJC
0.1
+T
C
0.0001
0.001
0.01
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC60U
10000
8000
Cies
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
cc
= 480V
V
CC
= 400V
I
c
= 40V
I
C
= 40A
16
V
GE
, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
6000
12
Coes
4000
8
Cres
2000
4
0
1
10
100
0
0
100
200
300
400
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
5.00
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 40A
100
Ω
RG = 5.0
VGE = 15V
Total Switching Losses (mJ)
4.00
Total Switching Losses (mJ)
VCC = 480V
10
IC = 80A
3.00
IC = 40A
1
IC = 20A
2.00
1.00
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R G, Gate Resistance (
Ω
)
T J, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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