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NDS0610
July 2002
NDS0610
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density process has been designed to minimize on-
state resistance, provide rugged and reliable
performance and fast switching. They can be used, with
a minimum of effort, in most applications requiring up to
120mA DC and can deliver current up to 1A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
Features
• −0.12A, −60V.
R
DS(ON)
= 10
Ω
@ V
GS
=
−10
V
R
DS(ON)
= 20
Ω
@ V
GS
=
−4.5
V
•
Voltage controlled p-channel small signal switch
•
High density cell design for low R
DS(ON)
•
High saturation current
D
D
S
G
S
SOT-23
G
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
Derate Above 25°C
Parameter
Ratings
−60
±20
(Note 1)
Units
V
V
A
W
mW/°C
°C
°C
−0.12
−1
0.36
2.9
−55
to +150
300
(Note 1)
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
350
°C/W
Package Marking and Ordering Information
Device Marking
610
Device
NDS0610
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2002
Fairchild Semiconductor Corporation
NDS0610 Rev B(W)
NDS0610
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage.
(Note 2)
Test Conditions
I
D
= –10
µA
V
GS
= 0 V,
I
D
= –10
µA,Referenced
to 25°C
V
DS
= –48 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
Min Typ
–60
–53
Max
Units
V
mV/°C
Off Characteristics
–1
–200
±10
µA
µA
nA
V
DS
= –48 V,V
GS
= 0 V T
J
= 125°C
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= –1 mA
–1
I
D
= –1 mA,Referenced to 25°C
V
GS
= –10 V, I
D
= –0.5 A
V
GS
= –4.5 V, I
D
= –0.25 A
V
GS
= –10 V,I
D
= –0.5 A,T
J
=125°C
V
GS
= –10 V, V
DS
= – 10 V
V
DS
= –10V,
I
D
= – 0.1 A
–1.7
3
1.0
1.3
1.7
–3.5
V
mV/°C
10
20
16
Ω
I
D(on)
g
FS
–0.6
70
430
A
mS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= –25 V,
f = 1.0 MHz
V
GS
= 0 V,
79
10
4
10
pF
pF
pF
Ω
V
GS
= –15 mV, f = 1.0 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –25 V,
V
GS
= –10 V,
I
D
= – 0.12 A,
R
GEN
= 6
Ω
2.5
6.3
10
7.5
5
12.6
15
15
2.5
ns
ns
ns
ns
nC
nC
nC
V
DS
= –48 V,
V
GS
= –10 V
I
D
= –0.5 A,
1.8
0.3
0.4
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= –0.24 A
(Note 2)
–0.8
17
(Note 2)
–0.24
–1.5
A
V
nS
nC
I
F
= –0.5A
d
iF
/d
t
= 100 A/µs
15
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
NDS0610 Rev B(W)
NDS0610
Typical Characteristics
1.4
V
GS
=-10V
1.2
-I
D
, DRAIN CURRENT (A)
1
0.8
0.6
0.4
0.2
0
0
1
-4.5V
2.2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-4.0V
2
V
GS
=-3.0V
1.8
1.6
-3.5V
1.4
1.2
1
0.8
-4.0V
-4.5V
-6.0V
-10V
-6.0V
-3.5V
-3.0V
-2.5V
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
5
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
I
D
= -0.5A
V
GS
= -10V
I
D
= -0.25A
4
3
T
A
= 125
o
C
2
1
T
A
= 25
o
C
0
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-25
0
25
50
75
100
o
125
150
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
1.2
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
T
A
= -55
o
C
125
o
C
25 C
1
-I
D
, DRAIN CURRENT (A)
0.8
0.6
0.4
0.2
0
1
1.5
2
2.5
3
3.5
4
4.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -10V
o
V
GS
= 0V
1
T
A
= 125
o
C
0.1
25
o
C
0.01
-55
o
C
0.001
0.0001
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS0610 Rev B(W)
NDS0610
Typical Characteristics
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -0.5A
8
-48V
6
V
DS
= -12V
-24V
100
C
ISS
80
CAPACITANCE (pF)
f = 1 MHz
V
GS
= 0 V
60
4
40
C
OSS
20
C
RSS
2
0
0
0.4
0.8
1.2
1.6
2
Q
g
, GATE CHARGE (nC)
0
0
10
20
30
40
50
60
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
10
P(pk), PEAK TRANSIENT POWER (W)
5
Figure 8. Capacitance Characteristics.
-I
D
, DRAIN CURRENT (A)
1
100us
R
DS(ON)
LIMIT
10ms
1ms
100ms
1s
V
GS
= -10V
SINGLE PULSE
R
θJA
= 350
o
C/W
T
A
= 25
o
C
10s
DC
4
SINGLE PULSE
R
θJA
= 350°C/W
T
A
= 25°C
3
0.1
2
0.01
1
0.001
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.01
0.1
1
t
1
, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 350
o
C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
C++ 属于面向对象的编程语言，OOP的思想不必多说，特别对于复杂的软件工程来说，利用OOP绝对是事半功倍，相对于传统的C来说； 当然用C来写单片机程序无可厚非，已经延续了一个传统，从大学时学的开始到工作岗位，好多人都是一直用C来做，但是既然Keil支持C++编译， 可以用C++来编写你的代码，可以利用高级语言来结构化，清晰化你的程序，为嘛不用呢！哈哈，个人看法！下面进入正题： C+...[详细]
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