IRG8P50N120KDPbF
IRG8P50N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 1200V
I
C
= 50A, T
C
=100°C
t
SC
10µs,
T
J(max)
= 150°C
V
CE(ON)
typ. = 1.7V
@ I
C
= 35A
G
C
G
E
C
E
G
C
E
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Benchmark Low V
CE(ON)
10μs Short Circuit SOA
Positive V
CE(ON)
Temperature Coefficient
Square RBSOA and high I
LM-
rating
Lead-Free, RoHS compliant
Base part number
IRG8P50N120KDPbF
IRG8P50N120KD-EPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Package Type
TO-247AC
TO-247AD
n-channel
IRG8P50N120KDPbF
TO‐247AC
G
Gate
C
Collector
IRG8P50N120KD‐EPbF
TO‐247AD
E
Emitter
Benefits
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P50N120KDPbF
IRG8P50N120KD-EPbF
Max.
1200
80
50
105
140
45
25
140
±30
350
140
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.36
0.83
–––
–––
Units
V
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
A
V
W
C
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Units
°C/W
1
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October 30, 2014
IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Min.
1200
—
Typ.
—
0.93
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 250µA
V/°C V
GE
= 0V, I
C
= 2mA (25°C-150°C)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)CES
/T
J
V
CE(on)
—
1.7
—
2.0
Gate Threshold Voltage
5.0
—
V
GE(th)
Threshold Voltage Temperature Coeff.
—
-16
V
GE(th)
/T
J
gfe
Forward Transconductance
—
20
—
1
I
CES
Collector-to-Emitter Leakage Current
—
1.2
Gate-to-Emitter Leakage Current
I
GES
—
—
—
2.1
V
F
Diode Forward Voltage Drop
—
2.4
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
.
2.0
V
I
C
= 35A, V
GE
= 15V, T
J
= 25°C
—
I
C
= 35A, V
GE
= 15V, T
J
= 150°C
6.5
V
V
CE
= V
GE
, I
C
= 1.4mA
—
mV/°C V
CE
= V
GE
, I
C
= 1.4mA (25°C-150°C)
—
S
V
CE
= 50V, I
C
= 35A, PW = 20µs
35
µA V
GE
= 0V, V
CE
= 1200V
—
mA
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
±300
nA V
GE
= ±30V
2.7
V
I
F
= 35A
—
I
F
= 35A, T
J
= 150°C
Max Units
Conditions
315
I
C
= 35A
nC V
GE
= 15V
15
V
CC
= 600V
205
—
—
mJ
I
C
= 35A, V
CC
= 600V, V
GE
=15V
—
R
G
= 5, T
J
= 25°C
—
Energy losses include tail & diode
—
ns reverse recovery
—
—
—
—
—
—
—
—
—
—
—
—
mJ
I
C
= 35A, V
CC
= 600V, V
GE
=15V
R
G
= 5, T
J
= 150°C
Energy losses include tail & diode
reverse recovery
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
210
10
135
2.3
1.9
4.2
35
25
190
105
3.8
3.9
7.7
30
25
270
140
3300
200
105
ns
FULL SQUARE
10
—
—
—
—
0.52
170
22
—
—
—
—
V
GE
= 0V
pF V
CC
= 30V
f = 1.0Mhz
T
J
= 150°C, I
C
= 140A
V
CC
= 960V, Vp
≤
1200V
V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 600V, Vp
≤
1200V
µs
V = +15V to 0V
GE
mJ
ns
A
T
J
= 150°C
V
CC
= 600V, I
F
= 35A
V
GE
= 15V, Rg = 5
2
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October 30, 2014
80
70
60
Load Current ( A )
IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 125W
50
40
30
20
10
0
0.1
1
f , Frequency ( kHz )
10
Square Wave:
V
CC
I
Diode as specified
100
Fig. 1
- Typical Load Current vs. Frequency
1000
(Load Current = I
RMS
of fundamental)
1000
100
10µsec
IC (A)
IC (A)
100
10
100µsec
1
1msec
DC
100
VCE (V)
1000
10000
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
0.1
1
10
100
VCE (V)
1000
10000
Fig. 2
- Forward SOA
T
C
= 25°C; T
J
≤
150°C; V
GE
= 15V
1000
1000
Fig. 3
- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
100
100
ICE (A)
ICE (A)
10
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
V CE (V)
8
10
10
1.0
1
Tc = -40°C
Tc = 25°C
Tc = 150°C
0.1
0.1
0
2
4
V CE (V)
6
8
Fig. 4
-Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
3
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© 2014 International Rectifier
Fig. 5
- Typ. IGBT Saturation Voltage
V
GE
= 15V; tp = 20µs
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October 30, 2014
1000
IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
16
VGE, Gate-to-Emitter Voltage (V)
14
12
10
8
6
4
2
0
VCES = 600V
VCES = 400V
100
ICE (A)
10
1
TJ = -40°C
TJ = 25°C
TJ = 150°C
0.1
4
6
8
10
V GE (V)
12
14
16
0
50
100
150
200
250
Q G, Total Gate Charge (nC)
Fig. 6
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
14
12
10
Energy (mJ)
EOFF @ Tj = 150°C
EON @ Tj = 150°C
ERR @ Tj = 150°C
Fig. 7
- Typical Gate Charge vs. V
GE
I
CE
= 35A
1000
tdOFF
Swiching Time (ns)
tF
100
tdON
8
6
4
2
0
0
EOFF @ Tj = 25°C
EON @ Tj = 25°C
ERR @ Tj = 25°C
10
tR
1
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC (A)
IC (A)
Fig. 8
- Typ. Energy Loss vs. I
C
V
CE
= 600V, R
G
= 5.0; V
GE
= 15V
10
9
8
7
Energy (mJ)
EON @ Tj = 150°C
EOFF @ Tj = 150°C
ERR @ Tj = 150°C
Fig. 9
- Typ. Switching Time vs. I
C
T
J
= 150°C; V
CE
= 600V, R
G
= 5.0; V
GE
= 15V
1000
tdOFF
Swiching Time (ns)
6
5
4
3
2
1
0
5
EON @ Tj = 25°C
EOFF @ Tj = 25°C
ERR @ Tj = 25°C
tF
100
tdON
tR
10
7
9
11 13 15 17 19 21 23 25 27
Rg (
)
3
6
9
12
15
RG (
)
18
21
24
27
Fig. 10
- Typ. Energy Loss vs. R
G
V
CE
= 600V, I
CE
= 35A; V
GE
= 15V
4
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© 2014 International Rectifier
Fig. 11
- Typ. Switching Time vs. R
G
T
J
= 150°C; V
CE
= 600V, I
CE
= 35A; V
GE
= 15V
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October 30, 2014
30
IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
1900
VCC = 600V
28
Tj = 150°C
VGE = 15V
IF = 35A
R G = 5
1700
1500
Energy (µJ)
RG = 5.0
RG = 10
RG = 22
RG = 27
IRR (A)
26
1300
1100
900
700
500
24
R G = 10
22
R G =
R G = 27
20
200
600
1000
1400
1800
2200
diF /dt (A/µs)
10
20
30
40
IF (A)
50
60
70
Fig. 12
- Typ. I
RR
vs. di/dt
1000
-40°C
25°C
150°C
100
Fig. 13
- Typ. Diode E
RR
vs. I
F
T
J
= 150°C
IF (A)
10
1
0.1
0.0
1.0
2.0
3.0
V F (V)
4.0
5.0
6.0
Fig. 14
- Typ. Diode Forward Voltage Drop
Characteristics
5
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© 2014 International Rectifier
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October 30, 2014
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