BYW172D, BYW172F, BYW172G
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Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Low forward voltage drop
949588
• High pulse current capability
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-64
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 858 mg
APPLICATIONS
• Fast rectification diode in S.M.P.S
ORDERING INFORMATION
(Example)
DEVICE NAME
BYW172G
BYW172G
ORDERING CODE
BYW172G-TR
BYW172G-TAP
TAPED UNITS
2500 per 10" tape and reel
2500 per ammopack
MINIMUM ORDER QUANTITY
12 500
12 500
PARTS TABLE
PART
BYW172D
BYW172F
BYW172G
TYPE DIFFERENTIATION
V
R
= 200 V; I
F(AV)
= 3 A
V
R
= 300 V; I
F(AV)
= 3 A
V
R
= 400 V; I
F(AV)
= 3 A
PACKAGE
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Average forward current
Non repetitive reverse avalanche energy
Junction and storage temperature range
I
(BR)R
= 1 A
TEST CONDITION
See electrical characteristics
t
p
= 10 ms, half sine wave
PART
BYW172D
BYW172F
BYW172G
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
F(AV)
E
R
T
j
= T
stg
VALUE
200
300
400
100
3
20
- 55 to + 175
UNIT
V
V
V
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
25
70
UNIT
K/W
K/W
Rev. 1.4, 11-Sep-12
Document Number: 86096
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYW172D, BYW172F, BYW172G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
TEST CONDITION
I
F
= 3 A
I
F
= 9 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
PART
SYMBOL
V
F
V
F
I
R
I
R
t
rr
MIN.
-
-
-
-
-
TYP.
-
-
-
-
75
MAX.
1.1
1.5
1
20
100
UNIT
V
V
μA
μA
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
40
3.5
I
FAV
- Average Forward Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0
R
thJA
= 70 K/W
PCB: d = 25 mm
V
R
= V
RRM
half
sinewave
R
thJA
= 25 K/W
I = 10 mm
30
20
l
l
10
T
L
= constant
0
0
949466
5
10
15
20
25
30
16388
0
20
40
60
80 100 120 140 160 180
l - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100
1000
V
R
= V
RRM
T
j
= 175 °C
T
j
= 25 °C
I
R
- Reverse Current (μA)
2.0
2.5
I
F
- Forward Current (A)
10
100
1
0.1
10
0.01
0.001
0
16387
0.5
1.0
1.5
1
25
16389
50
75
100
125
150
175
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.4, 11-Sep-12
Document Number: 86096
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYW172D, BYW172F, BYW172G
www.vishay.com
Vishay Semiconductors
P
R
- Reverse Power Dissipation (mW)
180
C
D
- Diode Capacitance (pF)
160
140
120
100
80
60
40
20
0
25
50
75
100
125
P
R
-Limit
at 80 % V
R
V
R
= V
RRM
120
f = 1 MHz
100
80
60
40
20
0
0.1
16391
P
R
-Limit
at 100 % V
R
150
175
1
10
100
16390
T
j
- Junction Temperature (°C)
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Z
thp
- Thermal Resist. for Pulse Cond. (K/W)
1000
Fig. 6 - Diode Capacitance vs. Reverse Voltage
V
RRM
= 600 V
R
thJA
= 70 K/W
100
t
p
/T = 0.5
0.2
10
0.1
0.05
0.02
0.01
1
10
-4
949562
T
amb
= 25 °C
100 °C
45 °C
70 °C
10
-3
10
-2
10
-1
10
-0
10
1
10
2
10
0
10
1
10
2
t
p
- Pulse Length (s)
I
FRM
- Repetitive Peak
Forward Current (A)
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 1.4, 11-Sep-12
Document Number: 86096
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Revision: 08-Feb-17
1
Document Number: 91000