PD - 96278B
IRLML0030TRPbF
V
DS
V
GS Max
R
DS(on) max
(@V
GS
= 10V)
30
± 20
27
40
V
V
mΩ
mΩ
S
2
G 1
HEXFET
®
Power MOSFET
3 D
R
DS(on) max
(@V
GS
= 4.5V)
Micro3
TM
(SOT-23)
IRLML0030TRPbF
Application(s)
•
Load/ System Switch
Features and Benefits
Features
Low R
DS(on)
(
≤
27mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
Benefits
Lower switching losses
Multi-vendor compatibility
results in Easier manufacturing
⇒
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
30
5.3
4.3
21
1.3
0.8
0.01
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Symbol
R
θJA
R
θJA
Parameter
Junction-to-Ambient
e
Typ.
–––
–––
Max.
100
99
Units
°C/W
Junction-to-Ambient (t<10s)
f
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
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1
02/29/12
IRLML0030TRPbF
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30
–––
–––
–––
1.3
–––
–––
–––
–––
–––
9.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.02
33
22
1.7
–––
–––
–––
–––
2.3
–––
2.6
0.8
1.1
5.2
4.4
7.4
4.4
382
84
39
–––
–––
40
27
2.3
1
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 4.5V, I
D
= 4.2A
V
GS
= 10V, I
D
V
DS
= V
GS
, I
D
= 25μA
V
DS
=24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 5.2A
I
D
= 5.2A
V
DS
=15V
V
DD
V
GS
= 4.5V
I
D
= 1.0A
R
G
= 6.8Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
μA
nA
Ω
S
d
= 5.2A
d
d
=15V
d
Source - Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Ã
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
11
4.0
1.6
A
21
1.0
17
6.0
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
p-n junction diode.
T
J
= 25°C, I
S
= 1.6A, V
GS
= 0V
T
J
= 25°C, V
R
= 15V, I
F
=1.6A
di/dt = 100A/μs
d
d
2
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IRLML0030TRPbF
100
TOP
VGS
10.0V
8.00V
4.50V
3.50V
3.25V
3.00V
2.50V
2.25V
100
TOP
VGS
10.0V
8.00V
4.50V
3.50V
3.25V
3.00V
2.50V
2.25V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
2.25V
0.1
2.25V
≤60μs
PULSE WIDTH Tj = 25°C
0.1
1
10
100
≤
60μs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.01
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
VDS = 15V
≤60μs
PULSE WIDTH
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 5.2A
VGS = 10V
ID, Drain-to-Source Current (A)
1.5
1
T J = 150°C
T J = 25°C
1.0
0.1
1.5
2.0
2.5
3.0
3.5
4.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRLML0030TRPbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= 5.2A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
VDS= 24V
VDS= 15V
1000
Ciss
Coss
Crss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
6
7
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
10
1
1msec
T J = 150°C
1
T J = 25°C
10msec
0.1
T A = 25°C
VGS = 0V
0.1
0.3
0.5
0.7
0.9
1.1
VSD, Source-to-Drain Voltage (V)
Tj = 150°C
Single Pulse
0.1
1
10
100
0.01
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLML0030TRPbF
6
V
DS
R
D
5
ID, Drain Current (A)
R
G
V
GS
D.U.T.
+
4
3
2
1
V
DS
-
V
DD
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
90%
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1000
Thermal Response ( Z thJA ) °C/W
100
10
1
0.1
0.01
0.001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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