N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
(Ω)
0.053 at V
GS
= 4.5 V
0.063 at V
GS
= 2.5 V
0.077 at V
GS
= 1.8 V
I
D
(A)
a
4.5
4.5
4.5
Q
g
(Typ.)
4.1 nC
FEATURES
•
Halogen-free
• LITTLE FOOT
®
Plus
Schottky Power MOSFET
• New Thermally Enhanced PowerPAK
®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
• Low V
f
Trench Schottky Diode
RoHS
COMPLIANT
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
20
V
f
(V)
Diode Forward Voltage
0.45 at 1 A
I
F
(A)
a
2
APPLICATIONS
• Load Switch for Portable Devices (MP3/Cellular)
•
Boost Converter
D
K
PowerPAK SC-70-6 Dual
1
A
2
NC
K
K
D
G
3
D
Marking Code
GAX
Part # code
0.75 mm
XXX
Lot Traceability
and Date code
G
6
5
2.05 mm
4
S
2.05 mm
S
Ordering Information:
SiA810DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C) (MOSFET)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (MOSFET)
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
T
C
= 25 °C
Maximum Power Dissipation (MOSFET)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
Maximum Power Dissipation (Schottky)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
P
D
T
C
= 25 °C
T
A
= 25 °C
I
DM
I
S
I
F
I
FM
I
D
Symbol
V
DS
V
KA
V
GS
Limit
20
20
±8
4.5
a
4.5
a
4.5
a, b, c
3.8
b, c
20
4.5
a
1.6
b, c
2
b
5
6.5
5
1.9
b, c
1.2
b, c
6.8
4.3
1.6
b, c
1.0
b, c
- 55 to 150
260
W
A
V
Unit
°C
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
www.vishay.com
1
New Product
SiA810DJ
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)
b, g
Maximum Junction-to-Case (Drain) (Schottky)
b, f
t
≤
5s
Steady State
t
≤
5s
Steady State
Symbol
R
thJA
R
thJC
R
thJA
R
thJC
Typical
52
12.5
62
15
Maximum
65
16
76
18.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
h
ttp://www.vishay.com/ppg?73257).
The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
g. Maximum under Steady State conditions is 110 °C/W.
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
a
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 3.7 A
V
GS
= 2.5 V, I
D
= 3.4 A
V
GS
= 1.8 V, I
D
= 1.1 A
V
DS
= 10 V, I
D
= 3.7 A
Min.
20
Typ.
Max.
Unit
V
1
- 2.8
0.4
1
± 100
1
10
20
0.043
0.052
0.062
15
400
0.053
0.063
0.077
mV/°C
V
nA
µA
A
Ω
S
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 8 V, I
D
= 4.8 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 4.8 A
f = 1 MHz
V
DD
= 10 V, R
L
= 2.6
Ω
I
D
≅
3.8 A, V
GEN
= 4.5 V, R
g
= 1
Ω
70
40
7
4.1
0.65
0.8
2.5
5
32
30
53
5
10
50
45
80
10
20
25
15
11.5
7
pF
nC
Ω
ns
V
DD
= 10 V, R
L
= 2.6
Ω
I
D
≅
3.8 A, V
GEN
= 8 V, R
g
= 1
Ω
12
15
10
www.vishay.com
2
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
New Product
SiA810DJ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 3.8 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3.8 A, V
GS
= 0 V
0.8
15
8.5
10
5
T
C
= 25 °C
4.5
20
1.2
30
20
A
V
ns
nC
ns
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 1 A
I
F
= 1 A, T
J
= 125 °C
V
r
= 5 V
V
r
= 5 V, T
J
= 85 °C
Maximum Reverse Leakage Current
I
rm
V
r
= 20 V
V
r
= 20 V, T
J
= 85 °C
V
r
= 20 V, T
J
= 125 °C
Junction Capacitance
C
T
V
r
= 10 V
Min.
Typ.
0.41
0.36
0.015
0.50
0.02
0.7
5
60
Max.
0.45
0.41
0.08
5.00
0.10
7
50
pF
mA
Unit
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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