PD - 9.1506
PRELIMINARY
l
l
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IRFR/U9024N
HEXFET
®
Power MOSFET
D
Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9024N)
Straight Lead (IRFU9024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
V
DSS
= -55V
R
DS(on)
= 0.175Ω
G
S
I
D
= -11A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D -P a k
T O -2 52 A A
I-P a k
TO -2 5 1 A A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-11
-8
-44
38
0.30
± 20
62
-6.6
3.8
-10
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
6/26/97
IRFR/U9024N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-55
–––
–––
-2.0
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
55
23
37
4.5
7.5
350
170
92
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.175
Ω
V
GS
= -10V, I
D
= -6.6A
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -25V, I
D
= -7.2A
-25
V
DS
= -55V, V
GS
= 0V
µA
-250
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
19
I
D
= -7.2A
5.1
nC V
DS
= -44V
10
V
GS
= -10V, See Fig. 6 and 13
–––
V
DD
= -28V
–––
I
D
= -7.2A
ns
–––
R
G
= 24Ω
–––
R
D
= 3.7Ω, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -11
showing the
A
G
integral reverse
––– ––– -44
p-n junction diode.
S
––– ––– -1.6
V
T
J
= 25°C, I
S
= -7.2A, V
GS
= 0V
––– 47
71
ns
T
J
= 25°C, I
F
= -7.2A
––– 84 130
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 2.8mH
R
G
= 25Ω, I
AS
= -6.6A. (See Figure 12)
I
SD
≤
-6.6A, di/dt
≤
240A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
IRFR/U9024N
100
TOP
-I D , Drain-to-Source Current (A)
BOTTOM
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
100
TOP
10
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
1
-4.5V
-4.5V
1
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
1
20µs PULSE WIDTH
T
J
= 150
°
C
10
100
-VDS , Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -11A
-I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
10
T
J
= 150
°
C
1.5
1.0
1
0.5
0.1
4
5
6
7
V DS = -25V
20µs PULSE WIDTH
8
9
10
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRFR/U9024N
700
20
-V
G S
, G a te -to -S o u rc e V o lta g e (V )
600
V
GS
C
is s
C
rs s
C
os s
=
=
=
=
0V ,
f = 1MH z
C
gs
+ C
g d
, C
ds
SH OR TED
C
gd
C
ds
+ C
gd
I
D
= -7 .2A
V
DS
= -44 V
V
DS
= -28 V
16
C , C a p a c ita n c e (p F )
500
C
is s
C
os s
12
400
300
8
200
C
rs s
4
100
0
1
10
100
A
0
0
5
10
FOR TE ST C IR C U IT
SE E FIG U R E 1 3
15
20
25
A
V
D S
, Drain-to-Source V oltage (V)
Q
G
, Total G ate C harge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
SD
, Reverse Drain Current (A)
-I
D
, Drain Current (A)
I
T
J
= 150
°
C
10
100
10us
T
J
= 25
°
C
10
100us
1
1ms
1
10ms
0.1
0.2
V
GS
= 0 V
0.6
0.9
1.3
1.6
0.1
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRFR/U9024N
12.0
V
DS
V
GS
R
D
D.U.T.
+
-I
D
, Drain Current (A)
-10V
6.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
3.0
t
d(on)
t
r
t
d(off)
t
f
V
GS
10%
0.0
25
50
75
100
125
150
90%
V
DS
T
C
, Case Temperature
( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
9.0
R
G
V
DD
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