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MUBW40-12T7

产品描述Discrete Semiconductor Modules 40 Amps 1200V
产品类别半导体    分立半导体   
文件大小90KB,共4页
制造商IXYS ( Littelfuse )
官网地址http://www.ixys.com/
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MUBW40-12T7概述

Discrete Semiconductor Modules 40 Amps 1200V

MUBW40-12T7规格参数

参数名称属性值
产品种类
Product Category
Discrete Semiconductor Modules
制造商
Manufacturer
IXYS ( Littelfuse )
RoHSDetails
产品
Product
Power Semiconductor Modules
类型
Type
Converter/Brake/Inv (CBI) IGBT Modules
Vr - Reverse Voltage1.6 kV
安装风格
Mounting Style
Screw
封装 / 箱体
Package / Case
E2
系列
Packaging
Bulk
工厂包装数量
Factory Pack Quantity
6

文档预览

下载PDF文档
MUBW 40-12 T7
Converter - Brake - Inverter Module
(CBI2)
Trench-IGBT
21
D11
D13
D15
22
D7
T1
7
16
15
6
D2
T2
D1
D3
T3
D5
T5
NTC
8
4
18
17
20
19
1
D12
2
D14
3
D16
5
D4
T4
E72873
14
T7
11
10
23
24
12
13
D6
T6
9
See outline drawing for pin arrangement
Preliminary data
Three Phase
Rectifier
Brake Chopper
Three Phase
Inverter
V
RRM
= 1600 V V
CES
= 1200 V V
CES
= 1200 V
I
FAVM25
= 42 A
I
C25
= 35 A
I
C25
= 62 A
I
FSM
= 300 A V
CE(sat)
= 2.3 V
V
CE(sat)
= 2 V
Application: AC motor drives with
Input Rectifier Bridge D11 - D16
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
T
C
= 80°C; sine 180°
T
C
= 80°C; rectangular; d =
1
/
3;
bridge
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
T
C
= 25°C
Conditions
Maximum Ratings
1600
30
80
300
100
V
A
A
A
W
Input from single or three phase grid
Three phase synchronous or
asynchronous motor
electric braking operation
Features
• High level of integration - only one power
semiconductor module required for the
whole drive
• Inverter with Trench IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
• Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
• Temperature sense included
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.2
1.2
0.4
1.4
0.02
V
V
mA
mA
V
F
I
R
R
thJC
I
F
= 35 A; T
VJ
= 25°C
T
VJ
= 125°C
V
R
= V
RRM
; T
VJ
= 25°C
T
VJ
= 125°C
(per diode)
1.3 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
1-4

 
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