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CY14V101QS-BK108XQT

产品描述NVRAM Non Volatile SRAMs
产品类别存储   
文件大小1019KB,共60页
制造商Cypress(赛普拉斯)
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CY14V101QS-BK108XQT概述

NVRAM Non Volatile SRAMs

CY14V101QS-BK108XQT规格参数

参数名称属性值
产品种类
Product Category
NVRAM
制造商
Manufacturer
Cypress(赛普拉斯)
RoHSDetails
系列
Packaging
Reel
Moisture SensitiveYes
工厂包装数量
Factory Pack Quantity
2000

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PRELIMINARY
CY14V101QS
1-Mbit (128K × 8) Quad SPI nvSRAM
Features
Density
1 Mbit (128K × 8)
Bandwidth
108-MHz high-speed interface
Read and write at 54 Mbps
Serial Peripheral Interface
Clock polarity and phase modes 0 and 3
Multi I/O option – Single SPI (SPI), Dual SPI (DPI), and Quad
SPI (QPI)
High reliability
Infinite read, write, and RECALL cycles
One million STORE cycles to nonvolatile elements (SONOS
FLASH Quantum trap)
Data retention: 20 years at 85 °C
Read
Commands: Normal, Fast, Dual I/O, and Quad I/O
Modes: Burst Wrap, Continuous (XIP)
Write
Commands: Normal, Fast, Dual I/O, and Quad I/O
Modes: Burst Wrap, Continuous (XIP)
Data protection
Hardware: Through Write Protect Pin (WP)
Software: Through Write Disable instruction
Block Protection: Status Register bits to control protection
Special instructions
STORE/RECALL: Access data between SRAM and
Quantum Trap
Serial Number: 8-byte customer selectable (OTP)
Identification Number: 4-byte Manufacturer ID and Product
ID
Store from SRAM to nonvolatile SONOS FLASH Quantum Trap
AutoStore: Initiated automatically at power-down with a small
capacitor (V
CAP
)
Software: Using SPI instruction (STORE)
Hardware: HSB pin
Recall from nonvolatile SONOS FLASH Quantum Trap to
SRAM
Auto RECALL: Initiated automatically at power-up
Software: Using SPI instruction (RECALL)
Low-power modes
Sleep: Average current = 280 µA at 85 °C, 500 µA at 105 °C
Hibernate: Average current = 8 µA at 85 °C, 10 µA at 105 °C
Operating supply voltages
Core V
CC
: 2.7 V to 3.6 V
I/O V
CCQ
: 1.71 V to 2.0 V
Temperature range
Extended Industrial: –40 °C to 105 °C
Industrial: –40 °C to 85 °C
Packages
16-pin SOIC
24-ball FBGA
Functional Overview
The Cypress CY14V101QS combines a 1-Mbit nvSRAM in a
monolithic integrated circuit with a QPI interface. The QPI allows
writing and reading the memory in either a single (one I/O
channel for one bit per clock cycle), dual (two I/O channels for
two bits per clock cycle), or quad (four I/O channels for four bits
per clock cycle) through the use of selected opcodes.
The memory is organized as 128K words of eight bits each
consisting of SRAM and nonvolatile SONOS FLASH Quantum
Trap cells. The SRAM provides infinite read and write cycles,
while the nonvolatile cells provide highly reliable nonvolatile
storage of data. Data transfers from SRAM to the nonvolatile
cells (STORE operation) take place automatically at
power-down. On power-up, data is restored to the SRAM from
the nonvolatile cells (RECALL operation). You can also initiate
the STORE and RECALL operations through SPI instruction.
Errata:
For information on silicon errata, see
“Errata”
on page 55. Details include trigger conditions, devices affected, and proposed workaround.
Cypress Semiconductor Corporation
Document Number: 001-85257 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised July 24, 2015

CY14V101QS-BK108XQT相似产品对比

CY14V101QS-BK108XQT CY14V101QS-SF108XQT CY14V101QS-BK108XQ CY14V101QS-SF108XQ CY14V101QS-SE108XI CY14V101QS-SE108XQ CY14V101QS-SF108XI
描述 NVRAM Non Volatile SRAMs NVRAM Non Volatile SRAMs IC NVSRAM 1M SPI 108MHZ 24FBGA IC NVSRAM 1M SPI 108MHZ 16SOIC IC NVSRAM 1M SPI 108MHZ 16SOIC IC NVSRAM 1M SPI 108MHZ 16SOIC IC NVSRAM 1M SPI 108MHZ 16SOIC
存储器类型 - - 非易失 非易失 非易失 非易失 非易失
存储器格式 - - NVSRAM NVSRAM NVSRAM NVSRAM NVSRAM
技术 - - NVSRAM(非易失性 SRAM) NVSRAM(非易失性 SRAM) NVSRAM(非易失性 SRAM) NVSRAM(非易失性 SRAM) NVSRAM(非易失性 SRAM)
存储容量 - - 1Mb (128K x 8) 1Mb (128K x 8) 1Mb (128K x 8) 1Mb (128K x 8) 1Mb (128K x 8)
时钟频率 - - 108MHz 108MHz 108MHz 108MHz 108MHz
存储器接口 - - SPI SPI SPI SPI SPI
电压 - 电源 - - 2.7 V ~ 3.6 V 2.7 V ~ 3.6 V 2.7 V ~ 3.6 V 2.7 V ~ 3.6 V 2.7 V ~ 3.6 V
工作温度 - - -40°C ~ 85°C(TA) -40°C ~ 85°C(TA) -40°C ~ 85°C(TA) -40°C ~ 85°C(TA) -40°C ~ 85°C(TA)
安装类型 - - 表面贴装 表面贴装 表面贴装 表面贴装 表面贴装
封装/外壳 - - 24-TBGA 16-SOIC(0.295",7.50mm 宽) 16-SOIC(0.295",7.50mm 宽) 16-SOIC(0.295",7.50mm 宽) 16-SOIC(0.295",7.50mm 宽)
供应商器件封装 - - 24-FBGA(6x8) 16-SOIC 16-SOIC 16-SOIC 16-SOIC

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