CMPA5585025F
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA5585025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated electron drift velocity
and higher thermal conductivity. GaN HEMTs also offer greater power
density and wider bandwidths compared to Si and GaAs transistors. This
MMIC is available in a 10 lead metal/ceramic flanged package for optimal
electrical and thermal performance.
PN: CMPA558
5025F
Package Type
: 440213
Typical Performance Over 5.8-8.4 GHz
(T
C
= 25˚C)
Parameter
Small Signal Gain
Output Power
1
Power Gain
1
Power Added Efficiency
1
5.8 GHz
29.5
15
21.7
30
6.4 GHz
24.0
23
19.5
25
7.2 GHz
24.0
20
17.2
20.5
7.9 GHz
24.0
19
18.5
19
8.4 GHz
22.0
19
18.6
19.5
Units
dB
W
dB
%
Note
1
: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA5585025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2.
Features
Applications
•
•
•
•
017
Rev 5.0 – May 2
25 dB Small Signal Gain
35 W Typical P
SAT
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
Size 1.00 x 0.385 inches
•
•
•
Point to Point Radio
Communications
Satellite Communication Uplink
•
•
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Drain-source Voltage
Gate-source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
1
Screw Torque
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Case Operating Temperature
Case Operating Temperature
Symbol
V
DSS
V
GS
P
DISS
T
STG
T
J
I
GMAX
T
S
Rating
84
-10, +2
55
-65, +150
225
10
245
40
1.55
1.80
-40, +140
-40, +85
Units
V
DC
V
DC
W
˚C
˚C
mA
˚C
in-oz
˚C/W
˚C/W
˚C
˚C
OQPSK, 85˚C, P
DISS
= 55 W
CW, 85˚C, P
DISS
= 77 W
P
DISS
= 55 W
P
DISS
= 77 W
25˚C
Conditions
25˚C
25˚C
τ
R
θJC
R
θJC
T
C
T
C
Note:
1
Refer to the Application Note on soldering at
www.cree.com/RF/Document-Library
Electrical Characteristics
(Frequency = 5.5 GHz to 8.5 GHz unless otherwise stated; T
C
= 25˚C)
Characteristics
DC Characteristics
1
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
2
Drain-Source Breakdown Voltage
RF Characteristics
3
Small Signal Gain
Input Return Loss
Output Return Loss
Output Mismatch Stress
S21
S11
S22
VSWR
18.25
–
–
–
24
10
6
–
–
–
–
5:1
dB
dB
dB
Y
V
DD
= 28 V, I
DQ
= 285 mA,
P
IN
= -20 dBm
V
DD
= 28 V, I
DQ
= 285 mA
V
DD
= 28 V, I
DQ
= 285 mA
No damage at all phase angles, V
DD
=
28 V, I
DQ
= 285 mA,
P
OUT
= 25W OQPSK
V
GS(TH)
V
GS(Q)
I
DS
V
BD
-3.8
–
10.6
84
-3.0
-2.7
12.8
100
-2.3
–
–
–
V
V
DC
A
V
V
DS
= 10 V, I
D
= 13.2 mA
V
DS
= 28 V, I
D
= 285 mA
V
DS
= 6.0 V, V
GS
= 2.0 V
V
GS
= -8 V, I
D
= 13.2 mA
Symbol
Min.
Typ.
Max.
Units
Conditions
Notes:
1
Measured on-wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in the CMPA5585025F-AMP
Copyright © 2011-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2
CMPA5585025F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Electrical Characteristics Continued...
(T
C
= 25˚C)
Characteristics
RF Characteristics
1,2,3,4
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Power Gain
Power Gain
Power Gain
Power Gain
OQPSK Linearity
OQPSK Linearity
OQPSK Linearity
OQPSK Linearity
PAE1
PAE2
PAE3
PAE4
G
P1
G
P2
G
P3
G
P4
ACLR1
ACLR2
ACLR3
ACLR4
24.5
16.5
15.5
15.0
19.5
16.25
16.55
16.75
–
–
–
–
30.0
20.5
19.0
19.5
21.7
17.2
18.5
18.6
-36
-36
-36
-42
–
–
–
–
–
–
–
–
–27.0
–28.5
–26.0
–32.5
%
%
%
%
dB
dB
dB
dB
dB
dB
dB
dB
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 5.8 GHz
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 7.2 GHz
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 7.9 GHz
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 8.4 GHz
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 5.8 GHz
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 7.2 GHz
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 7.9 GHz
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 8.4 GHz
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 5.8 GHz
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 7.2 GHz
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 7.9 GHz
V
DD
= 28 V, I
DQ
= 285 mA,
Frequency = 8.4 GHz
Symbol
Min.
Typ.
Max.
Units
Conditions
Notes:
1
Measured in the CMPA5585025F-AMP
2
Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2.
3
Measured at P
AVE
= 40 dBm.
4
Fixture loss de-embedded.
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2011-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
3
CMPA5585025F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance of the CMPA5585025F
Figure 1. CMPA5585025F Linear
Power, Gain and
Gain
at -30
PAE at -30 dBc, 1.6 MHz from carrier
CMPA5585025F Output
Output Power,
PAE
and
dBc - 1.6 MHz from carrier
V
DD
= 28 V,
V,
DQ
=
= 285
mA, 1.6
Msps OQPSK modulation
Vdd = 28
I
Idq
285
mA, 1.6
Msps OQPSK Modulation
40
35
Output Power (W), Gain (dB), & PAE (%)
30
25
20
15
10
C Band
Extended C Band
Output Power
Gain
PAE
X Band
5
0
5.7
5.9
6.1
6.3
6.5
6.7
Frequency (GHz)
6.9
7.1
7.3
7.5
7.7
7.9
8.1
8.3
8.5
Figure 2. Typical Small Signal Gain and Return Loss vs Frequency
Typical Small Signal Gain
CMPA5585025F-AMP
of the CMPA5585025F measured in
and Return Loss vs Frequency
Amplifier Circuit.
of the CMPA5585025F measured in CMPA5585025F-TB Amplifier Circuit.
V
DS
VDS
28 V, I
DS
= 285 mA
mA
=
= 28 V, IDS
= 285
40
Small Signal Gain, Input and Output Return Loss (dB)
30
20
10
|S21| (dB)
|S11| (dB)
0
|S22| (dB)
-10
-20
-30
-40
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2011-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4
CMPA5585025F Rev 5.0
Typical Performance of the CMPA5585025F
CMPA5585025F C-band Spectral Mask at 15 W
Figure 3. CMPA5585025F C-band Spectral Mask at 15 W
PAE = 29.1 % @ 5.8 GHz, 28.5 % @ 6.4 GHz & 25.6 % @ 7.2 GHz
PAE = 29.1% at 5.8 GHz, 28.5% at 6.4 GHz & 25.6% at 7.2 GHz
50
40
5.8 GHz
30
20
6.4 GHz
7.2 GHz
Magnitude (dB)
10
0
-10
-20
-30
-40
-6
-4
-2
Frequency (MHz)
0
2
4
6
CMPA5585025F X-band Spectral Mask at 15 W
Figure 4. CMPA5585025F X-band Spectral Mask at 15 W
PAE
PAE = 25.6 % @ 7.9 GHz
25.3% at
@ 8.4 GHz
= 25.6% at 7.9 GHz &
& 25.3 %
8.4 GHz
50
40
30
20
7.9 GHz
8.4 GHz
Magnitude (dB)
10
0
-10
-20
-30
-40
-6
-4
-2
Frequency (MHz)
0
2
4
6
Copyright © 2011-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5
CMPA5585025F Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
