PD - 97049B
IRF5210SPbF
IRF5210LPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from
IRF5210S/L
P-Channel
Lead-Free
D
V
DSS
= -100V
R
DS(on)
= 60mΩ
G
S
I
D
= -38A
D
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
D
G
D
S
G
D
S
D
2
Pak
IRF5210SPbF
TO-262
IRF5210LPbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Max.
-38
-24
-140
3.1
170
1.3
± 20
120
-23
17
-7.4
-55 to + 150
300 (1.6mm from case )
Units
A
c
W
W/°C
V
mJ
A
mJ
V/ns
°C
Repetitive Avalanche Energy
Operating Junction and
c
Peak Diode Recovery dv/dt
e
c
d
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R
θJC
R
θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady state)
Typ.
Max.
0.75
40
Units
°C/W
g
–––
–––
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1
08/04/09
IRF5210S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-100
–––
–––
-2.0
9.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-0.11
–––
–––
–––
–––
–––
–––
–––
150
22
81
14
63
72
55
4.5
7.5
2780
800
430
–––
–––
60
-4.0
–––
-50
-250
100
-100
230
33
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
Conditions
V V
GS
= 0V, I
D
= -250µA
V/°C Reference to 25°C, I
D
= -1mA
mΩ V
GS
= 10V, I
D
= -38A
V V
DS
= V
GS
, I
D
= -250µA
S V
DS
= -50V, I
D
= -23A
µA V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
nC I
D
= -23A
V
DS
= -80V
V
GS
= -10V
ns V
DD
= -50V
I
D
= -23A
R
G
= 2.4Ω
V
GS
= -10V
nH Between lead,
f
f
f
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
170
1180
-38
A
-140
-1.6
260
1770
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -23A, V
GS
= 0V
T
J
= 25°C, I
F
= -23A, V
DD
= -25V
di/dt = -100A/µs
Ã
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
f
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
Starting T
J
= 25°C, L = 0.46mH
R
G
= 25Ω, I
AS
= -23A. (See Figure 12)
I
SD
≤
-23A, di/dt
≤
-650A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
Pulse width
≤
300µs; duty cycle
≤
2%.
When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
2
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IRF5210S/LPbF
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-ID, Drain-to-Source Current (A)
100
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
-4.5V
1
10
-4.5V
1
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -38A
-I D, Drain-to-Source Current (A)
100
T J = 25°C
T J = 150°C
VGS = -10V
1.5
10
1.0
1
VDS = -50V
≤60µs
PULSE WIDTH
2
4
6
8
10
12
14
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF5210S/LPbF
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12.0
ID= -23A
-V GS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
VDS= -80V
VDS= -50V
VDS= -20V
C, Capacitance(pF)
10000
Ciss
1000
Coss
Crss
100
1
10
-VDS, Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
150
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100µsec
1msec
10msec
100
1000
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-VSD, Source-to-Drain Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF5210S/LPbF
V
DS
40
35
-I D, Drain Current (A)
R
D
V
GS
R
G
D.U.T.
+
30
25
20
15
10
5
0
25
50
75
100
125
150
90%
V
DS
t
d(on)
t
r
t
d(off)
t
f
-10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
GS
10%
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
C
τ
1
τ
2
τ
3
τ
3
τ
Ri (°C/W)
τι
(sec)
0.128309 0.000069
0.377663 0.001772
0.244513 0.010024
0.01
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
V
DD
5
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