OM
PL
IA
N
Features
n
Shielded construction
n
Unit height of 7.0 mm max.
n
Current up to 41 A
n
RoHS compliant*
*R
oH
S
This series is currently available,
but not recommended for new
designs. The newer
SRP1265A
series is recommended.
C
T
100 5
172
LE
AD
F
RE
E
Electrical Specifications
Bourns Part No.
SRP1270-R32M
SRP1270-R47M
SRP1270 Series - Shielded Power Inductors
General Specifications
Test Voltage ....................................1.0 V
Test Frequency ......................... 100 KHz
Reflow Soldering .. 230 °C; 50 sec. max.
Operating Temperature
................................-40 °C to +125 °C
(Temperature rise included)
Storage Temperature (On Board)
................................-40 °C to +125 °C
Resistance to Soldering Heat
............................. +260 °C for 10 sec.
Moisture Sensitivity Level .....................1
ESD Classification (HBM).................N/A
Materials
Core ..................................................Iron
Wire ............................Enameled copper
Adhesive .............................. Epoxy resin
Terminal ....................................Ag/Ni/Sn
Rated Current .....Ind. drops 20 % at Isat
Temperature Rise .....40 °C at rated Irms
Packaging ....... 400 pcs. per 13-inch reel
275
225
175
125
75
25
<1> 5 seconds maximum
at +245 °C
0.32
SRP1270-R68M
0.47
1.0
46
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
Inductance
L (μH) ±20 %
I rms
(A)
41
I sat
(A)
65
65
DCR
(mΩ) Max.
0.9
1.2
SRF
(MHz) Typ.
95
85
SRP1270-4R7M
SRP1270-5R6M
SRP1270-3R3M
SRP1270-2R2M
SRP1270-1R8M
SRP1270-1R5M
SRP1270-1R0M
0.68
1.5
32
24
27
35
4.7
5.6
3.3
2.2
1.8
15
14
11
18
22
SRP1270-6R8M
SRP1270-100M
SRP1270-8R2M
6.8
10.0
8.2
12
10
26.5
21
17
30
35
40
41
48
50
60
2.6
4.2
3.2
2.1
1.6
10.0
11.2
6.6
20
15
25
31
31
45
65
14.0
13
11
16
15.5
12
10
16.8
Soldering Profile
275
225
175
125
75
25
4.5
(.177)
Temperature (°C)
190°C
150 °C
120-150 seconds
220 °C
60 seconds
maximum
Ramp Down
5 °C/second
Temperature (°C)
<1> Maximum of 10 seconds
between +255 °C and +260 °C
<1> 255 °C
260 °C peak
Product Dimensions
13.7
MAX.
(0.539)
12.9
MAX.
(0.508)
MAX.
7.0
(.276)
°C
170
6.5
(.256)
MAX.
<1> 245 °C
183 °C
60 seconds
maximum
150 °C
13.7
(0.539)
MAX.
2.5
(.099)
10 seconds minimum
Ramp Up
4 °C/second maximum
50
100
150
200
250
300
100
Ramp Up
1725
4 °C/second maximum
50
12.9
MAX.
(0.508)
3.0 ± 0.5
(0.118 ± 0.020)
120 -150 seconds
R
5
10 seconds minimum
0
1.5
(.060)
0
100
150
200
250
Time (Seconds)
Time (Seconds)
Electrical Schematic
2.5 ± 0.5
(0.098 ± 0.020)
Recommended Layout
15.0
(0.591)
4.5
(.177)
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device
performance may vary over time.
Users should verify actual device performance in their specific applications.
7.0
(.276)
DIMENSIONS:
MM
(INCHES)
Applications
n
Input/output of DC/DC converters
n
Power supplies for:
• Portable communications equipment
• Camcorders
• LCD TVs
• Car audio systems
SRP1270 Series - Shielded Power Inductors
L vs. I Charts
0.5
0.4
0.3
0.2
0.1
0
SRP1270-R32M
100
0.6
SRP1270-R47M
Temperature Rise (°C)
Inductance ( H)
Inductance ( H)
60
40
20
0
65
0.4
0.3
0.2
0.1
0
0
13
26
39
52
Inductance ( H)
80
0.8
0.6
0.4
0.2
0
50
40
30
20
10
0
65
50
40
30
20
10
0
60
0
13
DC Current (A)
26
39
52
DC Current (A)
0
10
20
DC Current (A)
30
40
50
1.2
1.0
SRP1270-1R0M
Temperature Rise (°C)
Temperature Rise (°C)
Inductance ( H)
Inductance ( H)
0.8
0.6
0.4
0.2
0
0
10
20
30
40
60
50
40
30
20
10
0
50
1.5
1.0
0.5
0
60
50
40
30
20
10
0
48
Inductance ( H)
2.0
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
41
DC Current (A)
0
8
16
DC Current (A)
24
32
40
0
8.2
DC Current (A)
16.4
24.6
32.8
2.5
2.0
SRP1270-2R2M
100
90
80
70
60
50
40
30
20
10
0
40
4.0
SRP1270-3R3M
Inductance ( H)
Inductance ( H)
Inductance ( H)
3.2
2.4
1.6
0.8
0
1.5
1.0
0.5
0
0
10
DC Current (A)
20
30
0
7
DC Current (A)
14
21
28
100
90
80
70
60
50
40
30
20
10
0
35
6.0
SRP1270-4R7M
Temperature Rise (°C)
Temperature Rise (°C)
4.0
3.0
2.0
1.0
0
0
6
12
18
24
DC Current (A)
9.0
7.2
5.4
3.6
1.8
0
SRP1270-5R6M
100
80
12.0
9.0
6.0
3.0
0
SRP1270-6R8M
60
40
20
0
26.5
0
5.3
DC Current (A)
10.6
15.9
21.2
0
4.2
DC Current (A)
8.4
12.6
16.8
100
90
80
70
60
50
40
30
20
10
0
21
14.0
SRP1270-8R2M
100
Temperature Rise (°C)
Temperature Rise (°C)
8.4
5.6
2.8
0
0
3.2
6.4
9.6
12.8
60
40
20
0
16
DC Current (A)
15.0
12.0
9.0
6.0
3.0
0
SRP1270-100M
0
4
DC Current (A)
8
12
100
90
80
70
60
50
40
30
20
10
0
16
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Temperature Rise (°C)
Inductance ( H)
Temperature Rise (°C)
11.2
Inductance ( H)
Inductance ( H)
80
Inductance ( H)
Temperature Rise (°C)
5.0
100
90
80
70
60
50
40
30
20
10
0
30
Temperature Rise (°C)
100
90
80
70
2.5
SRP1270-1R5M
100
90
80
70
2.5
SRP1270-1R8M
100
90
80
70
Temperature Rise (°C)
0.5
Temperature Rise (°C)
100
90
80
70
60
1.0
SRP1270-R68M
100
90
80
70
60
3312 - 2 mm SMD Trimming Potentiometer
SRP1270 Series - Shielded Power Inductors
Packaging Specifications
330.0
(13.00)
DIA.
2.0 ± 0.5
(.079 ± .020)
THICKNESS
0.10
(.004)
MAX.
EMBOSSED
CAVITY
13.5 ± 0.5
(0.53 ± .020)
DIA.
100.0 ± 2.0
(3.94 ± .079)
13.5 ± 0.5
DIA.
(.53 ± .020)
EMBOSSED
CARRIER
24.0 ± 0.5
(0.95 ± 0.020)
0.50 ± 0.05
(0.020 ± 0.002)
14.2 ± 0.1
(0.559 ± 0.004)
4.0 ± 0.1
(0.157 ± 0.004)
2.0 ± 0.1
(0.079 ± 0.004)
1.5 ± 0.1
(0.059 ± 0.004)
DIA.
1.75 ± 0.1
(.069 ± 0.004)
2.7 ± 0.3
(.106 ± 0.012)
24.0 ± 0.3
(0.95 ± 0.012)
6.9 ± 0.1
(0.272 ± 0.004)
0.15
DIA.
(0.0006)
13.2 ± 0.1
(0.520 ± 0.004)
20.5 ± 0.1
(0.807 ± 0.004)
DIMENSIONS:
MM
(INCHES)
REV. 12/17
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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