1N4006B-G: 产品描述Aluminum Electrolytic Capacitors - Leaded 100uF 100V 20% Axial; 产品类别分立半导体二极管; 文件大小54KB，共2页; 制造商Comchip Technology; 官网地址http://www.comchiptech.com/

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1N4006B-G概述

Aluminum Electrolytic Capacitors - Leaded 100uF 100V 20% Axial

1N4006B-G规格参数

参数名称	属性值
是否无铅	不含铅
厂商名称	Comchip Technology
Reach Compliance Code	compliant
Is Samacsys	N
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-41
JESD-30 代码	O-PALF-W2
元件数量	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	1 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
最大重复峰值反向电压	800 V
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL
Base Number Matches	1

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General Purpose Silicon Rectifiers

1N4001-G Thru. 1N4007-G

Voltage: 50 to 1000 V

Current: 1.0 A

RoHS Device

Features

-Low cost construction.

-Fast forward voltage drop.

-Low reverse leakage.

-High forward surge current capability.

-High soldering temperature guarantee: 260

C/10

seconds, 0.375”(9.5mm) lead length at 5lbs(2.3kg)

tension.

1.0(25.40) Min.

DO-41

0.205(5.20)

0.160(4.20)

Mechanical data

-Case: transfer molded plastic, DO-41

-Epoxy: UL 94V-0 rate flame retardant

-Polarity: Indicated by cathode band

-Lead: Plated axial lead, solderable per MIL-STD-

202E, method 208C

-Mounting position: Any

Dimensions in inches and (millimeter)

0.034(0.90)

0.028(0.70)

0.107(2.70)

0.080(2.00)

1.0(25.40) Min.

-Weight: 0.012ounce, 0.33 grams

Electrical Characteristics

(at TA=25°C unless otherwise noted)

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load derate current by 20%.

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

0.375"(9.5mm) Lead Length @T

=55 C

Peak Forward Surge Current,

8.3mS single half sine-wave superimposed on

rated load (JEDEC method)

Maximum Instantaneous Forward Voltage @1.0A

Maximum DC Reverse Current at Rated

DC Blocking voltage per element

=25

=100 C

Symbol

RRM

RMS

(AV)

1N4001

-G

1N4002

-G

100

1N4003

-G

200

140

200

1N 4004

-G

400

280

400

1.0

1N4005

-G

600

420

600

1N4006

-G

800

560

800

1N4007

-G

1000

700

1000

Unit

FSM

R(AV)

θJA

STG

μA

1.1

5.0

-55 ~ +150

Maximum Full Load Reverse Current,full cycle

average 0.375”(9.5mm)lead length at T

=75

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Ttemperature Range

C/W

NOTES:

1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

2. Thermal Resistance from junction to terminal 6.0mm

copper pads to each terminal.

REV:A

QW-BG013

Page 1

Comchip Technology CO., LTD.

1N4006B-G相似产品对比

	1N4006B-G	1N4001-G	1N4006-G	FP55S-4222-FB25W	1N4004T-G	1N4007B-G	1N4006T-G	RG1S-2644-CB201W
描述	Aluminum Electrolytic Capacitors - Leaded 100uF 100V 20% Axial	Diodes - General Purpose, Power, Switching 100V Io/200mA BULK	Cartridge Fuses 250V 2A Time Lag (Slo-Blo)	Fixed Resistor, Metal Film, 0.5W, 42200ohm, 250V, 1% +/-Tol, 25ppm/Cel,	Pluggable Terminal Blocks 2 Pos 5mm pitch Plug 26-14 AWG Screw	Board Mount Temperature Sensors PREC CENTIGRADE TEMP SENSOR	Rectifiers	Fixed Resistor, Metal Glaze/thick Film, 1W, 2640000ohm, 1500V, 0.25% +/-Tol, 200ppm/Cel,
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
端子数量	2	2	2	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	160 °C	150 °C	150 °C	150 °C	155 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
封装形状	ROUND	ROUND	ROUND	CYLINDRICAL PACKAGE	ROUND	ROUND	ROUND	CYLINDRICAL PACKAGE
封装形式	LONG FORM	LONG FORM	LONG FORM	Axial	LONG FORM	LONG FORM	LONG FORM	Axial
厂商名称	Comchip Technology	Comchip Technology	Comchip Technology	-	Comchip Technology	Comchip Technology	Comchip Technology	-
外壳连接	ISOLATED	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED	-
配置	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	-
二极管元件材料	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON	-
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-
JEDEC-95代码	DO-41	DO-41	DO-41	-	DO-41	DO-41	DO-41	-
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	-
元件数量	1	1	1	-	1	1	1	-
最大输出电流	1 A	1 A	1 A	-	1 A	1 A	1 A	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
最大重复峰值反向电压	800 V	50 V	800 V	-	400 V	1000 V	800 V	-
表面贴装	NO	NO	NO	-	NO	NO	NO	-
端子形式	WIRE	WIRE	WIRE	-	WIRE	WIRE	WIRE	-
端子位置	AXIAL	AXIAL	AXIAL	-	AXIAL	AXIAL	AXIAL	-

1N4006B-G

1N4006B-G在线购买

1N4006B-G概述

1N4006B-G规格参数

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1N4006B-G相似产品对比

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