VS-8TQ080SPbF, VS-8TQ100SPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 8 A
FEATURES
Base
cathode
2
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
D2PAK (TO-263AB)
1
N/C
3
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Diode variation
8A
80 V, 100 V
0.72 V
7 mA at 125 °C
175 °C
7.5 mJ
D2PAK (TO-263AB)
Single
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-8TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
8 A
pk
, T
J
= 125 °C
Range
VALUES
8
80, 100
850
0.58
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-8TQ080SPbF
80
VS-8TQ100SPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 157 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
8
850
A
230
7.50
0.50
mJ
A
UNITS
A
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 08-Aug-17
Document Number: 94266
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ080SPbF, VS-8TQ100SPbF
www.vishay.com
Vishay Semiconductors
SYMBOL
8A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.72
0.88
0.58
0.69
0.55
7
500
8
10 000
mA
pF
nH
V/μs
V
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
See fig. 1
V
FM (1)
16 A
8A
16 A
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
I
RM
(1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style D2PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth, and greased
TEST CONDITIONS
VALUES
-55 to +175
2.0
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
8TQ080S
8TQ100S
UNITS
°C
Mounting torque
Marking device
Revision: 08-Aug-17
Document Number: 94266
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ080SPbF, VS-8TQ100SPbF
www.vishay.com
Vishay Semiconductors
100
I
F
- Instantaneous Forward Current (A)
1000
T
J
= 175 °C
I
R
- Reverse Current (mA)
10
1
0.1
0.01
0.001
0.0001
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0
20
40
60
80
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10 20 30 40 50 60 70 80 90 100 110
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.1
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 08-Aug-17
Document Number: 94266
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ080SPbF, VS-8TQ100SPbF
www.vishay.com
Vishay Semiconductors
7
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Allowable Case Temperature (°C)
180
170
165
160
155
150
145
140
DC
Average Power Loss (W)
175
6
5
4
3
RMS limit
Square wave (D = 0.50)
80 % rated V
R
applied
DC
2
1
0
See note (1)
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 08-Aug-17
Document Number: 94266
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ080SPbF, VS-8TQ100SPbF
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
8
2
T
3
Q
4
100
5
S
6
TRL PbF
7
8
Vishay Semiconductors product
Current rating (8 A)
Circuit configuration: T = TO-220
Schottky “Q” series
Voltage ratings
S = D
2
PAK
None = tube (50 pieces)
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
080 = 80 V
100 = 100 V
8
-
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE models
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
www.vishay.com/doc?96227
Revision: 08-Aug-17
Document Number: 94266
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
