IRFD110, SiHFD110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
8.3
2.3
3.8
Single
D
FEATURES
100
0.54
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
HVMDIP
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
HVMDIP
IRFD110PbF
SiHFD110-E3
IRFD110
SiHFD110
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T
A
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
100
± 20
1.0
0.71
8.0
0.0083
140
1.0
0.13
1.3
5.5
- 55 to + 175
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 52 mH, R
g
= 25
,
I
AS
= 2.0 A (see fig. 12).
c. I
SD
5.6 A, dI/dt
75 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91127
S10-2466-Rev. C, 25-Oct-10
www.vishay.com
1
IRFD110, SiHFD110
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
R
thJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 0.60 A
b
V
DS
= 50 V, I
D
= 0.60 A
b
100
-
2.0
-
-
-
-
0.80
-
0.12
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.54
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
180
81
15
-
-
-
6.9
16
15
9.4
4.0
6.0
-
-
-
8.3
2.3
3.8
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 5.6 A, V
DS
= 80 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 50 V, I
D
= 5.6 A,
R
g
= 24
,
R
D
= 8.4
,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
100
0.44
1.0
A
8.0
2.5
200
0.88
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 1.0 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 5.6 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
www.vishay.com
2
Document Number: 91127
S10-2466-Rev. C, 25-Oct-10
IRFD110, SiHFD110
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
V
GS
10
1
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10
1
25
°
C
I
D
, Drain Current (A)
I
D
, Drain Current (A)
175
°
C
10
0
10
0
4.5 V
20 µs Pulse Width
T
A
=
25 °C
10
-1
10
0
10
1
10
-1
4
91127_03
20 µs Pulse Width
V
DS
=
50 V
5
6
7
8
9
10
91127_01
V
DS
, Drain-to-Source Voltage (V)
V
GS,
Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T
A
= 25 °C
Fig. 3 - Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
10
1
Top
I
D
, Drain Current (A)
10
0
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 5.6 A
V
GS
= 10 V
4.5 V
20 µs Pulse Width
T
A
=
175 °C
10
-1
91127_02
10
0
10
1
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160 180
V
DS
, Drain-to-Source Voltage (V)
91127_04
T
J,
Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, T
A
= 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91127
S10-2466-Rev. C, 25-Oct-10
www.vishay.com
3
IRFD110, SiHFD110
Vishay Siliconix
400
I
SD
, Reverse Drain Current (A)
320
Capacitance (pF)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
175
°
C
240
C
iss
160
C
oss
10
0
25
°
C
80
C
rss
0
10
0
91127_05
10
-1
V
GS
= 0 V
10
1
0.5
91127_07
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
DS,
Drain-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
V
GS
, Gate-to-Source Voltage (V)
I
D
= 5.6 A
V
DS
= 80 V
10
2
5
Operation in this area limited
by R
DS(on)
16
I
D
, Drain Current (A)
V
DS
= 50 V
V
DS
= 20 V
2
10
5
2
12
10
µs
100
µs
1
ms
10
ms
T
A
= 25
°C
T
J
= 175
°C
Single Pulse
2
5
8
1
5
4
For test circuit
see figure 13
2
0
0
91127_06
2
4
6
8
10
91127_08
0.1
0.1
1
2
5
10
2
5
10
2
2
5
10
3
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91127
S10-2466-Rev. C, 25-Oct-10
IRFD110, SiHFD110
Vishay Siliconix
R
D
V
DS
1.0
R
g
V
GS
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
0.8
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
0.6
0.4
Fig. 10a - Switching Time Test Circuit
0.2
V
DS
0.0
25
91127_09
90 %
50
75
100
125
150
175
T
A
, Ambient Temperature (°C)
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
Fig. 10b - Switching Time Waveforms
10
3
Thermal Response (Z
thJA
)
10
2
0 - 0.5
0.2
10
0.1
0.05
0.02
0.01
1
Single Pulse
(Thermal Response)
P
DM
t
1
0.1
10
-2
10
-5
91127_11
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-2
0.1
1
10
10
2
10
3
10
-4
10
-3
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Document Number: 91127
S10-2466-Rev. C, 25-Oct-10
www.vishay.com
5
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