VS-20CUT10, VS-20CWT10FN
www.vishay.com
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 10 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
I-PAK (TO-251AA)
Base
common
cathode
4
D-PAK (TO-252AA)
Base
common
cathode
4
• Extremely low reverse leakage
• Optimized V
F
vs. I
R
trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
3
1
Anode
Anode
2
Common
cathode
2
Common
3
1
Anode cathode Anode
VS-20CUT10
VS-20CWT10FN
APPLICATIONS
• High efficiency SMPS
• High frequency switching
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA),
I-PAK (TO-251AA)
2 x 10 A
100 V
0.66 V
4 mA at 125 °C
175 °C
Common cathode
54 mJ
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
V
F
T
J
10 Apk, T
J
= 125 °C (typical, per leg)
Range
CHARACTERISTICS
VALUES
100
0.615
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 25 °C
VS-20CUT10
VS-20CWT10FN
100
UNITS
V
Revision: 02-Nov-11
Document Number: 94651
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CUT10, VS-20CWT10FN
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 159 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
T
J
= 25 °C, I
AS
= 3 A, L = 12 mH
Limited by frequency of operation and time pulse duration
so that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
(see fig. 8)
Following any rated load
condition and with rated
V
RRM
applied
VALUES
10
20
610
A
110
54
I
AS
at
T
J
max.
mJ
UNITS
A
Maximum peak one cycle
non-repetitive surge current per leg
Non-repetitive avalanche
energy per leg
Repetitive avalanche current per leg
I
AR
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
10 A
Forward voltage drop per leg
V
FM (1)
20 A
10 A
20 A
Reverse leakage current per leg
Junction capacitance per leg
Series inductance per leg
Maximum voltage rate of change
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
TYP.
0.735
0.840
0.615
0.730
-
-
400
8.0
-
MAX.
0.810
0.890
0.660
0.770
50
4
-
-
10 000
μA
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
Approximate weight
Case style I-PAK
Case style D-PAK
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
VALUES
- 55 to 175
2
R
thJC
DC operation
1
R
thCS
0.3
0.3
0.01
20CUT10
20CWT10FN
g
oz.
°C/W
UNITS
°C
Marking device
Revision: 02-Nov-11
Document Number: 94651
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CUT10, VS-20CWT10FN
www.vishay.com
I
F
- Instantaneous Forward Current (A)
Vishay Semiconductors
100
100
I
R
- Reverse Current (mA)
175 °C
10
150 °C
1
0.1
75 °C
0.01
0.001
0.0001
50 °C
25 °C
125 °C
100 °C
T
J
= 175 °C
10
T
J
= 125 °C
T
J
= 25 °C
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
10
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance (°C/W)
1
D = 0.75
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.1
Single
Pulse
(Thermal Resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 02-Nov-11
Document Number: 94651
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CUT10, VS-20CWT10FN
www.vishay.com
180
10
180°
120°
90°
60°
30°
RMS Limit
4
DC
Vishay Semiconductors
Allowable Lead Temperature (°C)
Average Power Loss (W)
175
170
165
160
155
150
see
note
(1)
Square
wave (D = 0.50)
80 % rated V
r
applied
DC
8
6
2
145
0
2
4
6
8
10
12
14
16
0
0
3
6
9
12
15
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Average Forward Current - I
F(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
100
Avalanche Current (A)
T
J
= 25 °C
10
T
J
= 125 °C
T
J
= 175 °C
1
1
10
100
Rectangular Pulse Duration (μs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
Revision: 02-Nov-11
Document Number: 94651
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CUT10, VS-20CWT10FN
www.vishay.com
Vishay Semiconductors
100
Avalanche Current (A)
10
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
1
1
10
100
Rectangular Pulse Duration (μs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
-
-
-
-
20
2
C
3
U
4
T
5
10
6
FN
7
TRL
8
Vishay Semiconductors product
Current rating (20 A)
Circuit configuration:
C = Common cathode
Package:
U = I-PAK
W = D-PAK
5
6
7
8
-
-
-
-
T = Trench
Voltage rating (10 = 100 V)
TO-252AA (D-PAK)
D-PAK, I-PAK:
None = Tube (75 pieces)
D-PAK only:
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
LINKS TO RELATED DOCUMENTS
Dimensions
I-PAK (TO-251AA)
D-PAK (TO-252AA)
I-PAK (TO-251AA)
D-PAK (TO-252AA)
www.vishay.com/doc?95024
www.vishay.com/doc?95448
www.vishay.com/doc?95025
www.vishay.com/doc?95059
www.vishay.com/doc?95033
www.vishay.com/doc?95041
Part marking information
Packaging information
SPICE model
Revision: 02-Nov-11
Document Number: 94651
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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