VS-40EPF0.PbF Series, VS-40EPF0.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 40 A
FEATURES
Base
cathode
2
2
3
1
1
Cathode
3
Anode
• Glass passivated pellet chip junction
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified
JEDEC
®
-JESD 47
according
to
Available
TO-247AC modified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-247AC modified (2 pins)
40 A
200 V, 400 V, 600 V
1.25 V
475 A
60 ns
150 °C
Single die
0.5
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-40EPF0... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
10 A, T
J
= 25 °C
1 A, - 100 A/μs
CHARACTERISTICS
Sinusoidal waveform
VALUES
40
200 to 600
475
1
60
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-40EPF02PbF, VS-40EPF02-M3
VS-40EPF04PbF, VS-40EPF04-M3
VS-40EPF06PbF, VS-40EPF06-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
8
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
40
400
475
800
1131
11 310
A
2
s
A
2
s
A
UNITS
Revision: 11-Feb-16
Document Number: 94102
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40EPF0.PbF Series, VS-40EPF0.-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
40 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.25
4.4
1.1
0.1
8.0
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 40 A
pk
25 A/μs
25 °C
VALUES
180
3.2
0.5
0.5
UNITS
ns
A
μC
dir
dt
I
FM
t
rr
t
Q
rr
I
RM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.6
40
0.2
6
0.21
6 (5)
12 (10)
40EPF02
Marking device
Case style TO-247AC modified (JEDEC)
40EPF04
40EPF06
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Revision: 11-Feb-16
Document Number: 94102
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40EPF0.PbF Series, VS-40EPF0.-M3 Series
www.vishay.com
150
140
130
120
110
100
30°
90
0
5
10
15
20
25
30
35
40
45
60°
90°
120°
180°
80
Vishay Semiconductors
Maximum Average Forward
Power Loss (W)
70
60
50
40
30
Ø
Maximum Allowable Case
Temperature (°C)
40EPF.. Series
R
thJC
(DC) = 0.6 K/W
Ø
180°
120°
90°
60°
30°
RMS limit
DC
Conduction angle
20
10
0
0
10
20
30
Conduction period
40EPF.. Series
T
J
= 150 °C
40
50
60
70
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
450
40EPF.. Series
R
thJC
(DC) = 0.6 K/W
400
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
60°
90
0
10
20
30
30°
Peak Half Sine Wave
Forward Current (A)
350
300
250
200
150
Ø
Conduction period
90°
120°
180°
40
50
DC
40EPF.. Series
100
70
1
10
100
60
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
60
500
180°
120°
90°
60°
30°
RMS limit
450
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
50
40
30
20
10
0
0
5
Peak Half Sine Wave
Forward Current (A)
400
350
300
250
200
150
40EPF.. Series
100
0.01
Ø
Conduction angle
40EPF.. Series
T
J
= 150 °C
10
15
20
25
30
35
40
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 94102
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40EPF0.PbF Series, VS-40EPF0.-M3 Series
www.vishay.com
1000
Vishay Semiconductors
Instantaneous Forward Current (A)
100
10
T
J
= 25 °C
T
J
= 150 °C
40EPF.. Series
1
0
1
2
3
4
5
6
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
225
I
FM
= 80 A
200
4
40EPF.. Series
T
J
= 25 °C
3
I
FM
= 40 A
2
I
FM
= 20 A
1
I
FM
= 10 A
I
FM
= 5 A
0
0
40
80
120
160
200
0
40
80
120
I
FM
= 1 A
160
200
I
FM
= 80 A
t
rr
- Typical Reverse
Recovery Time (ns)
175
150
125
100
I
FM
= 10 A
I
FM
= 40 A
I
FM
= 20 A
I
FM
= 5 A
75
50
25
40EPF.. Series
T
J
= 25 °C
I
FM
= 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Q
rr
- Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.8
40EPF.. Series
T
J
= 150 °C
I
FM
= 80 A
I
FM
= 40 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
10
40EPF.. Series
T
J
= 150 °C
0.6
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (ns)
8
I
FM
= 80 A
6
I
FM
= 40 A
0.4
4
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
0
40
80
120
160
200
0.2
2
0
0
40
80
120
160
200
0
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Revision: 11-Feb-16
Document Number: 94102
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40EPF0.PbF Series, VS-40EPF0.-M3 Series
www.vishay.com
25
40EPF.. Series
T
J
= 25 °C
I
FM
= 80 A
I
FM
= 40 A
15
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
5
I
FM
= 1 A
50
40EPF.. Series
T
J
= 150 °C
Vishay Semiconductors
I
rr
- Typical Reverse
Recovery Current (A)
I
rr
- Typical Reverse
Recovery Current (A)
20
40
I
FM
= 80 A
I
FM
= 40 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
30
10
20
10
0
0
40
80
120
160
200
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (K/W)
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.01
0.0001
0.001
0.01
0.1
40EPF.. Series
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 94102
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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