AUTOMOTIVE GRADE
AUIRF1404Z
AUIRF1404ZS
AUIRF1404ZL
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
D
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
40V
3.7m
180A
160A
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
Base part number
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
Package Type
TO-220
TO-262
D
2
-Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
S
D
G
TO-220AB
AUIRF1404Z
2
S
G
D Pak
AUIRF1404ZS
G
S
D
TO-262
AUIRF1404ZL
G
Gate
Quantity
50
50
50
800
D
Drain
S
Source
Orderable Part Number
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
AUIRF1404ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
180
120
160
710
200
1.3
± 20
330
480
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-11
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRF1404Z/S/L
Min. Typ. Max. Units
Conditions
40
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.033 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
2.7
3.7 m V
GS
= 10V, I
D
= 75A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
170 ––– –––
S V
DS
= 25V, I
D
= 75A
––– –––
20
V
DS
=40 V, V
GS
= 0V
µA
––– ––– 250
V
DS
=40V,V
GS
= 0V,T
J
=125°C
––– ––– 200
V
GS
= 20V
nA
––– ––– -200
V
GS
= -20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
100
31
42
18
110
36
58
4.5
7.5
4340
1030
550
3300
920
1350
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 75A
nC
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 75A
ns
R
G
= 3.0
V
GS
= 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 75A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 75A, V
DD
= 20V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
Input Capacitance
C
iss
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
Effective Output Capacitance
C
oss eff.
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
Forward Turn-On Time
t
on
Notes:
Typ. Max. Units
–––
–––
–––
28
34
160
750
1.3
42
51
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.11mH, R
G
= 25, I
AS
= 75A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting T
J
= 25°C, L = 0.11mH, R
G
= 25, I
AS
= 75A, V
GS
=10V.
This is only applied to TO-220AB pakcage.
This is applied to D
2
Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
TO-220 device will have an Rth value of 0.65°C/W.
R
is measured at T
J
approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current limit is 160A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
2
2015-11-11
AUIRF1404Z/S/L
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
10
100
1
4.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
4.5V
10
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
200
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
A)
T J = 25°C
T J = 175°C
160
T J = 175°C
100
120
T J = 25°C
80
10
40
1
4.0
5.0
6.0
7.0
VDS = 15V
20µs PULSE WIDTH
8.0
9.0
10.0
11.0
VDS = 15V
20µs PULSE WIDTH
0
40
80
120
160
0
ID, Drain-to-Source Current (A)
VGS , Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Trans conductance
vs. Drain Current
3
2015-11-11
AUIRF1404Z/S/L
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= 75A
VDS = 32V
VDS= 20V
16
6000
C, Capacitance (pF)
Ciss
4000
12
8
2000
Coss
Crss
4
0
1
10
100
0
0
40
80
120
160
VDS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100.0
T J = 175°C
1000
10.0
T J = 25°C
1.0
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
1msec
0.1
0.2
0.6
1.0
VGS = 0V
1.4
1.8
1
10msec
100
1000
VSD , Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-11-11
AUIRF1404Z/S/L
200
Limited By Package
150
ID, Drain Current (A)
2.0
RDS(on) , Drain-to-Source On Resistance
ID = 75A
VGS = 10V
1.5
100
(Normalized)
1.0
50
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-11-11
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