AUTOMOTIVE GRADE
PD - 97764
AUIRFI3205
Features
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Advanced Planar Technology
Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Distance = 4.8mm
175°C Operating Temperature
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET
®
Power MOSFET
V
(BR)DSS
R
DS(on)
max.
I
D
55V
0.008
64A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rug-
gedized device design that HEXFET power
MOSFETs are well known for, provides the de-
signer with an extremely efficient and reliable de-
vice for use in Automotive and a wide variety of
other applications.
D
S
G
TO-220AB Full-Pak
AUIRFI3205
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
Max.
64
45
390
63
0.42
± 20
480
59
6.3
5.0
-55 to + 175
300
10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
ch
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Avalanche Current
Single Pulse Avalanche Energy (Thermally Limited)
ch
dh
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
e
eh
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
JC
R
JA
Junction-to-Case
y
y
i
Parameter
Typ.
–––
–––
Max.
2.4
65
Units
°C/W
Junction-to-Ambient
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
03/14/12
AUIRFI3205
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55
–––
–––
2.0
42
–––
–––
–––
–––
–––
–––
0.057 –––
––– 0.008
–––
4.0
–––
–––
–––
25
–––
250
–––
100
––– -100
V
V/°C
V
S
μA
nA
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 34A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 59A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
f
h
h
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
100
43
70
4.5
7.5
4000
1300
480
12
170
32
74
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 59A
V
DS
= 44V
V
GS
= 10V, See Fig. 6&13
V
DD
= 28V
I
D
= 59A
R
G
= 2.5
R
D
= 0.39, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
ƒ = 1.0MHz
fh
ns
fh
D
G
S
nH
pF
h
D
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
110
450
64
A
390
1.3
170
680
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
T
J
= 25°C, I
F
= 59A
di/dt = 100A/μs
f
fh
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 190µH
R
G
= 25, I
AS
= 59A. (See Figure 12)
I
SD
59A, di/dt
290A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
Pulse width
300µs;
duty cycle 2%.
t=60s, =60Hz
Uses IRF3205 data and test conditions.
R
is measured at Tj at approximately 90°C.
2
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AUIRFI3205
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220 Fullpak
AEC-Q101-002
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Class H2 (+/- 4000V)
††
AEC-Q101-001
Class C5 (+/- 1125V)
††
AEC-Q101-005
Yes
N/A
Class M4 (+/- 425V)
††
Moisture Sensitivity Level
Machine Model
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
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3
AUIRFI3205
1000
I , Drain-to-Source Current (A)
D
100
I , Drain-to-Source Current (A)
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
0.1
4.5V
20μs PULSE WIDTH
T
C
= 25°C
1
10
A
100
10
0.1
20μs PULSE WIDTH
T
C
= 175°C
1
10
100
A
VDS , Drain-to-Source Voltage (V)
T
J
VDS , Drain-to-Source Voltage (V)
T
J
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
T
J
= 25°C
100
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 98A
I
D
, Drain-to-Source Current (A)
T
J
= 175°C
1.5
1.0
10
0.5
1
4
5
6
7
V
DS
= 25V
20μs PULSE WIDTH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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AUIRFI3205
8000
7000
6000
5000
4000
3000
2000
1000
0
1
C, Capacitance (pF)
C
iss
C
oss
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 59A
V
DS
= 44V
V
DS
= 28V
V
DS
= 11V
16
12
8
C
rss
4
10
100
A
0
0
30
60
90
FOR TEST CIRCUIT
SEE FIGURE 13
120
150
180
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
I
D
, Drain Current (A)
100
100μs
100
T
J
= 175°C
1ms
10
10ms
T
J
= 25°C
10
0.6
1.0
1.4
1.8
2.2
V
GS
= 0V
2.6
A
3.0
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
100
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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5
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