MD1803DFP
High voltage NPN Power transistor for standard definition CRT
display
Features
■
■
■
■
■
■
State-of-the-art technology:
– Diffused collector “enhanced generation”
Stable performance versus operating
temperature variation
Low base drive requirement
Tight h
FE
range at operating collector current
Fully insulated power package UL compliant
Integrated free wheeling diode
TO-220FP
1
3
2
Applications
■
Horizontal deflection output for TV
Figure 1.
Internal schematic diagram
Description
The MD1803DFP is manufactured using diffused
collector in planar technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
bringing updated performance to the horizontal
deflection stage.
R
BE
=60Ω typ.
Table 1.
Device summary
Marking
MD1803DFP
Package
TO-220FP
Packing
Tube
Order code
MD1803DFP
May 2008
Rev 1
1/10
www.st.com
10
Electrical ratings
MD1803DFP
1
Electrical ratings
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
TOT
V
isol
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Total dissipation at T
c
= 25°C
Insulation withstand voltage (rms) from all three leads to
external heatsink
Storage temperature
Max. operating junction temperature
Value
1500
700
10
10
15
5
40
1500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
°C
°C
Table 3.
Symbol
Thermal data
Parameter
Value
3.125
Unit
°C/W
R
thj-case
Thermal resistance junction-case
___________ ____max
2/10
MD1803DFP
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25°C; unless otherwise specified)
Table 4.
Symbol
I
CES
I
EBO
V
(BR)EBO
V
CE(sat)(1)
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
= 0)
Emitter cut-off current
(I
C
= 0)
Test conditions
V
CE
= 1500 V
V
CE
= 1500 V
V
EB
= 5 V
Min.
Typ.
Max.
0.2
2
40
10
I
B
= 1.25 A
I
B
= 1.25 A
V
CE
= 5 V
V
CE
= 1 V
V
CE
= 5 V
18
5
5.5
7.5
1.6
2.5
0.3
3
0.6
V
µs
µs
2
1.2
120
Unit
mA
mA
mA
V
V
V
T
c
= 125 °C
Emitter-base breakdown voltage
I
E
= 700 mA
(I
C
= 0)
Collector-emitter saturation
voltage
I
C
= 5 A
I
C
= 5 A
I
C
= 1 A
I
C
= 5 A
I
C
= 5 A
I
F
= 5 A
I
C
= 4 A__
_ _
f
h
= 16 KHz
I
B(on)
= 0.6 A__ V
BE(off)
= - 2.7V
L
BB(off)
= 4.5
µH
V
BE(sat)(1)
Base-emitter saturation voltage
h
FE
(1)
DC current gain
Diode forward voltage
Inductive load
Storage time
Fall time
V
F
t
s
t
f
1. Pulsed duration = 300 ms, duty cycle
≤
1.5%.
3/10
Electrical characteristics
MD1803DFP
2.1
Figure 2.
Electrical characteristics (curve)
Safe operating area
Figure 3.
Derating curve
Figure 4.
Output characteristics
Figure 5.
Reverse biased SOA
4/10
MD1803DFP
Figure 6.
DC current gain
Figure 7.
DC current gain
Electrical characteristics
Figure 8.
Collector-emitter saturation voltage Figure 9.
Base-emitter saturation voltage
Figure 10. Power losses
Figure 11. Inductive load switching time
5/10
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