TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Applications
Communications
Electronic Warfare
Test Instrumentation
EMC Amplifier
Product Features
Frequency Range: 2.5 to 6 GHz
P
SAT
: 46.5 dBm @ P
IN
= 26dBm, CW
PAE: 36%
Small Signal Gain: 29 dB
Bias: V
D
= 30 V, I
DQ
= 1.55 A, V
G
= −2.5 V Typical
Dimensions: 11.4 x 17.3 x 3.0 mm.
Functional Block Diagram
1
2
10
9
3
8
4
5
7
6
General Description
TriQuint’s TGA2576-2-FL is a wideband power amplifier
fabricated on TriQuint’s proven 0.25um GaN on SiC
production technology. Operating from 2.5 to 6 GHz, the
TGA2576-2-FL achieves 40W of saturated output power,
greater than 36% power-added efficiency and 29dB
small signal gain.
For ideal thermal management and handling, the
TGA2576-2-FL is offered in a CuW-based flanged
packaged and can operate in both CW and pulsed
modes.
Fully matched to 50Ω and with integrated DC blocking
caps on both I/O ports, the TGA2576-2-FL is ideally
suited to support a variety of commercial and defense
related applications.
Lead-free and RoHS compliant
Evaluation Boards are available up on request.
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
Pin Configuration
Pin No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
V
G
N/C
RF IN
V
D
RF OUT
Ordering Information
Part
ECCN
Description
2.5 to 6GHz 40W GaN PA
TGA2576-2-FL 3A001.b.2.a
- 1 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (V
D
)
40 V
Gate Voltage (V
G
)
−5 to 0 V
Drain Current (I
D
)
5000 mA
Gate Current (I
G
)
−18 to 35 mA
Power Dissipation (P
DISS
)
93 W
RF Input Power, CW, 50 Ω, T = 25°C
28 dBm
Channel tremperature (T
CH
)
275°C
Mounting Temperature
(30 Seconds)
Storage Temperature
260°C
−40 to 150°C
Recommended Operating Conditions
Parameter
Drain Voltage (V
D
)
Drain Current (I
DQ
)
Drain Current Under RF Drive (I
D_DRIVE
)
Gate Voltage (V
G
)
Value
30 V
1550 mA
4300 mA
-2.5 V
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all operating
conditions.
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25°C, V
D
= 30 V, I
DQ
= 1550 mA, V
G
= −2.5 V Typical, CW
Parameter
Operational Frequency Range
Small Signal Gain
Output Power at Saturation (Pin = 26 dBm)
Power-Added Efficiency (Pin = 26 dBm)
Gain Temperature Coefficient
Power Temperature Coefficient
Min
2.5
Typical
29
46.5
36 (Mid-band)
-0.02
-0.02
Max
6
Units
GHz
dB
dBm
%
dB/°C
dBm/°C
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
- 2 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θ
JC
)
Channel Temperature Under RF Drive (T
CH
)
Median Lifetime Under RF Drive (T
M
)
(1)
Test Conditions
T
BASE
= 85°C
Value
2.04
224
Units
ºC/W
°C
Hours
V
D
=
30
V, I
D_Drive
= 3600 mA, P
OUT
=
46 dBm, P
DISS
= 68 W
1.69 x 10^6
Notes:
1. Measured from junction to center of package backside.
Median Lifetime
Test Conditions: V
D
= 40V; Failure Criteria is 10% reduction in I
D_MAX
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
- 3 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Typical Performance
Conditions unless otherwise specified: V
D
= 30V, I
DQ
= 1.55A, V
G
= -2.5V Typical, CW
35
30
25
Gain vs. Frequency vs. Temperature
S21 (dB)
20
15
10
5
-40C
+25C
+85C
0
2
3
4
5
6
7
Frequency (GHz)
0
-5
-10
Input Return Loss vs. Freq. vs. Temp.
0
-5
-10
Output Return Loss vs. Freq. vs. Temp.
S11 (dB)
-15
-20
-40C
S22 (dB)
-15
-20
-40C
+25C
+85C
-25
+25C
+85C
-25
-30
2
3
4
5
6
7
-30
2
3
4
5
6
7
Frequency (GHz)
Frequency (GHz)
50
48
46
Power vs. Frequency vs. Temperature
P
IN
= 26dBm
PAE vs. Frequency vs. Temperature
63
P
IN
= 26dBm
54
45
P
OUT
(dBm)
PAE (%)
-40C
+25C
+85C
44
42
40
38
36
27
18
9
0
-40C
+25C
+85C
36
2.5
3
3.5
4
4.5
5
5.5
6
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
Frequency (GHz)
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
- 4 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Typical Performance (con’t.)
Conditions unless otherwise specified: V
D
= 30V, I
DQ
= 1.55A, V
G
= -2.5V Typical, CW
56
Temp.=+25°C
P
OUT
, Gain, PAE vs. P
IN
Freq.= 2.5GHz
63
56
Temp.=+25°C
Power, I
D
vs. P
IN
Freq = 2.5GHz
5000
4300
3600
48
P
OUT
(dBm), Gain (dB)
54
48
40
40
32
24
P
OUT
(dBm)
45
36
32
24
2900
2200
1500
P
OUT
I
D
27
18
P
OUT
Gain
PAE
16
8
0
0
4
8
12
16
20
24
28
16
8
0
0
4
8
12
16
20
24
28
9
800
100
0
Input Power (dBm)
Input Power (dBm)
56
Temp.=+25°C
P
OUT
, Gain, PAE vs. P
IN
Freq.= 4.0GHz
56
48
40
56
Temp.=+25°C
Power, I
D
vs. P
IN
Freq.= 4.0GHz
5000
4300
3600
48
48
40
P
OUT
(dBm), Gain (dB)
40
32
24
32
24
16
P
OUT
Gain
PAE
32
24
2900
2200
1500
P
OUT
I
D
16
8
0
0
4
8
12
16
20
24
28
16
8
0
0
4
8
12
16
20
24
28
8
0
800
100
Input Power (dBm)
Input Power (dBm)
56
Temp.=+25°C
P
OUT
, Gain, PAE vs. P
IN
Freq.= 6.0GHz
56
48
40
56
Temp.=+25°C
Power, I
D
vs. P
IN
Freq.= 6.0GHz
5000
4300
3600
48
48
40
P
OUT
(dBm), Gain (dB)
40
32
24
32
24
16
P
OUT
Gain
PAE
32
24
2900
2200
1500
P
OUT
I
D
16
8
0
0
4
8
12
16
20
24
28
16
8
0
0
4
8
12
16
20
24
28
8
0
800
100
Input Power (dBm)
Input Power (dBm)
Preliminary Datasheet: Rev - 01-21-14
© 2014 TriQuint
- 5 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
Drain Current (mA)
P
OUT
(dBm)
PAE (%)
Drain Current (mA)
P
OUT
(dBm)
PAE (%)
Drain Current (mA)
PAE (%)
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