Datasheet> 器件分类 > 半导体> 分立半导体> RBR1MM40ATR

RBR1MM40ATR: 产品描述LDO Voltage Regulators LDO; 产品类别半导体分立半导体; 文件大小2MB，共12页; 制造商ROHM(罗姆半导体); 官网地址https://www.rohm.com/

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RBR1MM40ATR概述

LDO Voltage Regulators LDO

RBR1MM40ATR规格参数

参数名称	属性值
产品种类 Product Category	Schottky Diodes & Rectifiers
制造商 Manufacturer	ROHM(罗姆半导体)
RoHS	Details
产品 Product	Schottky Diodes
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SOD-123FL-2
If - Forward Current	1 A
Vrrm - Repetitive Reverse Voltage	40 V
Vf - Forward Voltage	520 mV
Ifsm - Forward Surge Current	20 A
Configuration	Single
技术 Technology	Si
Ir - Reverse Current	50 uA
最大工作温度 Maximum Operating Temperature	+ 150 C
系列 Packaging	MouseReel
系列 Packaging	Reel
系列 Packaging	Cut Tape
工厂包装数量 Factory Pack Quantity	3000
Vr - Reverse Voltage	40 V

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RBR1MM40A

Schottky Barrier Diode

Data sheet

●

Outline

FSM

●

Inner Circuit

●

Features

High reliability

Small power mold type

Low V

●

Application

General rectification

●

Structure

Silicon epitaxial planar

●

Packaging Specifications

Packing

Embossed T

ape

Reel Size(mm)

180

aping Width(mm)

Basic Ordering Unit(pcs)

3000

aping Code

Marking

●

Absolute Maximum Ratings (T

=25ºC unless otherwise specified)

Parameter

Repetitive peak reverse voltage

Reverse voltage

Average rectified forward current

Peak forward surge current

Junction temperature

(1)

Storage temperature

Symbol

FSM

stg

Conditions

Duty

≦

0.5

Reverse direct voltage

Glass epoxy mounted

、

60Hz half sin waveform

、

resistive load

、

=120

℃

Max.

60Hz half sin waveform

、

Non-repetitive

、

one cycle

、

=25

℃

Limits

150

-55

150

Unit

℃

Note(1) T avoid occurrence of thermal runaway

，

actual board is to be designed to fulfill dP

/dT

<1/R

th(j-a)

●

Characteristics (T

=25ºC unless otherwise specified)

Parameter

Forward voltage

Reverse current

Attention

Symbol

Conditions

=1A

=40V

Min. Typ. Max. Unit

0.52

μA

www.rohm.com

1/5

2017/05/16_Rev.001

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