Freescale Semiconductor
Technical Data
Document Number: MD7IC2012N
Rev. 0, 4/2013
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC2012N wideband integrated circuit is designed with on−chip
matching that makes it usable from 1805 to 2170 MHz. This multi−stage
structure is rated for 24 to 32 volt operation and covers all typical cellular
base station modulation formats.
Driver Application — 2100 MHz
•
Typical Single−Carrier W−CDMA Performance: V
DD
= 28 Volts,
I
DQ1A
= I
DQ1B
= 20 mA, I
DQ2A
= I
DQ2B
= 70 mA, P
out
= 1.3 Watts Avg.,
IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
31.0
31.3
31.5
PAE
(%)
14.7
14.8
14.9
ACPR
(dBc)
−51.3
−51.2
−50.6
MD7IC2012NR1
MD7IC2012GNR1
1805−2170 MHz, 1.3 W AVG., 28 V
SINGLE W−CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
TO−270 WB−14
PLASTIC
MD7IC2012NR1
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 14 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
]
12 Watts CW
Driver Application — 1800 MHz
•
Typical Single−Carrier W−CDMA Performance: V
DD
= 28 Volts,
I
DQ1A
= I
DQ1B
= 20 mA, I
DQ2A
= I
DQ2B
= 70 mA, P
out
= 1.3 Watts Avg.,
IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
32.8
32.2
31.6
PAE
(%)
13.4
13.6
13.8
ACPR
(dBc)
−51.0
−51.2
−51.8
TO−270 WB−14 GULL
PLASTIC
MD7IC2012GNR1
Features
•
•
•
•
•
•
•
•
Characterized with Series Equivalent Large−Signal Impedance Parameters and Common Source S−Parameters
On−Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
(1)
Integrated ESD Protection
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
225°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13−inch Reel.
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes − AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2013. All rights reserved.
MD7IC2012NR1 MD7IC2012GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
V
DS1A
RF
inA
V
DS1A
V
GS2A
V
GS1A
RF
inA
N.C.
N.C.
N.C.
N.C.
RF
inB
V
GS1B
V
GS2B
V
DS1B
1
2
3
4
5
6
7
8
9
10
11
12
RF
out1
/V
DS2A
14
RF
out1
/V
DS2A
V
GS1A
V
GS2A
V
GS1B
V
GS2B
Quiescent Current
Temperature Compensation
(1)
Quiescent Current
Temperature Compensation
(1)
13
RF
out2
/V
DS2B
RF
inB
V
DS1B
RF
out2
/V
DS2B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
Table 1. Maximum Ratings
Rating
Drain−Source Voltage
Gate−Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2,3)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
−0.5, +65
−0.5, +10
32, +0
−65 to +150
150
225
20
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77°C, 1.3 W, 2170 MHz
Stage 1, 28 Vdc, I
DQ1A
= I
DQ1B
= 20 mA, 2170 MHz
Stage 2, 28 Vdc, I
DQ2A
= I
DQ2B
= 70 mA, 2170 MHz
Case Temperature 79°C, 12 W CW, 2170 MHz
Stage 1, 28 Vdc, I
DQ1A
= I
DQ1B
= 20 mA, 2170 MHz
Stage 2, 28 Vdc, I
DQ2A
= I
DQ2B
= 70 mA, 2170 MHz
Symbol
R
θJC
7.8
3.1
7.3
2.4
Value
(3,4)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22−A114)
Machine Model (per EIA/JESD22−A115)
Charge Device Model (per JESD22−C101)
Class
1A
A
II
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22−A113, IPC/JEDEC J−STD−020
Rating
3
Package Peak Temperature
260
Unit
°C
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes − AN1977 or AN1987.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes − AN1955.
MD7IC2012NR1 MD7IC2012GNR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 − Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate−Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 − On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 5
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1A
= I
DQ1B
= 20 mA)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 20 mA, Measured in Functional Test)
Stage 2 − Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate−Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 − On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 24
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2A
= I
DQ2B
= 70 mA)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2A
= I
DQ2B
= 70 mA, Measured in Functional Test)
Drain−Source On−Voltage
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
3.2
0.1
2.0
2.0
4.0
0.24
2.7
—
4.7
1.5
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
V
GS(th)
V
GS(Q)
V
GG(Q)
1.2
—
4.2
2.0
2.7
5.0
2.7
—
5.7
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2,3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 20 mA, I
DQ2A
= I
DQ2B
= 70 mA,
P
out
= 1.3 W Avg., f = 2170 MHz, Single−Carrier W−CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak−to−Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
PAE
PAR
ACPR
30.7
13.2
6.8
—
31.5
14.9
7.3
−50.6
34.7
—
—
−48.3
dB
%
dB
dBc
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
(continued)
MD7IC2012NR1 MD7IC2012GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 20 mA, I
DQ2A
= I
DQ2B
= 70 mA,
2110−2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point, CW
IMD Symmetry @ 10 W PEP, P
out
where IMD Third Order
Intermodulation
`
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature
(1,2)
with 2 kΩ Gate Feed Resistors (−30 to 85°C)
with 2 kΩ Gate Feed Resistors (−30 to 85°C)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 1.3 W Avg.
Gain Variation over Temperature
(−30°C to +85°C)
Output Power Variation over Temperature
(−30°C to +85°C)
Stage 1
Stage 2
G
F
ΔG
ΔP1dB
P1dB
P3dB
IMD
sym
—
60
—
—
—
12
13
—
—
W
W
MHz
VBW
res
ΔI
QT
—
85
—
MHz
%
—
—
—
—
—
2.5
2.5
0.2
0.03
0.012
—
—
—
—
—
dB
dB/°C
dB/°C
1. Each side of device measured separately.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control for
the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes − AN1977 or AN1987.
MD7IC2012NR1 MD7IC2012GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
V
GG1A
C23
R1
V
GG2A
C24
R2
C2
V
DD1A
C31
V
C32
DD2A
C1
C25
C17
MD7IC2012N
Rev. 2
C19
C29
C35
C36
C5
C6
C9
C10
C13 C15
C14 C16
CUT OUT AREA
C11
C12
C22
C8
C7
C21
Z2
R6
Z1
R5
C37
C38
C20
C30
C3
C4
C26
R3
V
GG1B
R4
C27
V
GG2B
C28
C18
V
DD1B
C33
C34
V
DD2B
Figure 3. MD7IC2012NR1 Test Circuit Component Layout — 1805−2170 MHz
Table 6. MD7IC2012NR1 Test Circuit Component Designations and Values — 1805−2170 MHz
Part
C1, C2, C3, C4
C5, C6, C7, C8
C9, C10, C11, C12
C13, C14
C15, C16
C17, C18, C19, C20
C21, C22
C23, C24, C25, C26, C27, C28,
C29, C30, C31, C32, C33, C34
C35, C36, C37, C38
R1, R2, R3, R4
R5, R6
Z1, Z2
PCB
Description
3.9 pF Chip Capacitors
1.0 pF Chip Capacitors
0.6 pF Chip Capacitors
0.8 pF Chip Capacitors
1.2 pF Chip Capacitors
10 pF Chip Capacitors
5.6 pF Chip Capacitors
10
mF,
Chip Capacitors
22 nF Chip Capacitors
2 kW, 1/8 W Chip Resistors
50
W,
20 W SM Chip Power Resistors
1800−2300 MHz Band, 90°, 3 dB Hybrid Coupler
0.020″,
e
r
= 3.50
Part Number
ATC600F3R9BT250XT
ATC600F1R0BT250XT
ATC600F0R6BT250XT
ATC600F0R8BT250XT
ATC600F1R2BT250XT
ATC600F10RBT250XT
ATC600F5R6BT250XT
C5750X7S2A106M230KB
GRM31BR72E223KW01L
CRCW12062K00FKEA
C20N50Z4
X3C21P1−03S
RO4350B
Manufacturer
ATC
ATC
ATC
ATC
ATC
ATC
ATC
TDK
Murata
Vishay
Anaren
Anaren
Rogers
MD7IC2012NR1 MD7IC2012GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
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