SMD Switching Diode
CDSV3-19-G/20-G/21-G
High Speed
RoHS Device
Features
-Fast switching diode.
-Surface mount package ideally for automatic
insertion.
-For general purpose switching applications.
-High conductance.
0.054(1.35)
0.045(1.15)
1
0.056(1.40)
0.047(1.20)
2
0.006(0.15)
0.002(0.05)
SOT-323
0.087(2.20)
0.070(1.80)
3
Mechanical data
-Case: SOT-323
-Terminals: Solder plated, solderable per MIL-
STD-750, Method 2026.
-Marking: CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
KA8
KT2
KT3
0.044(1.10)
0.035(0.90)
0.087(2.20)
0.078(2.00)
0.004(0.10)max.
0.016(0.40)
0.008(0.20)
0.004(0.10)min.
Dimensions in inches and (millimeters)
Maximum Rating
(at Ta=25°C unless otherwise noted)
Parameter
Power dissipation
Forward current
Reverse voltage
CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
Symbol
P
D
I
F
V
R
T
J
, T
STG
Value
200
200
120
150
200
-55 ~ +150
Unit
mW
mA
V
O
Junction and storage temperature
C
Electrical Characteristics
(at Ta=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage
CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
Symbol
V
(BR)R
Test Conditions
I
R
=100uA
V
R
=100V
V
R
=150V
V
R
=200V
I
F
=100mA
I
F
=200mA
V
R
=0V, f=1MH
Z
I
F
=I
R
=30mA, Irr=0.1
X
I
R
Min
100
150
200
Max
Unit
V
Reverse leakage current
I
R
0.1
1
1.25
5
50
UA
Forward voltage
Diode capacitance
Reverse recovery time
V
F
C
D
t
rr
V
pF
nS
REV:A
QW-B0025
Page 1
SMD Switching Diode
Characteristic Curves (CDSV3-19-G/20-G/21-G)
Fig.1 - Forward Characteristics
1000
T
J
=25 C
O
Fig.2 - Leakage Current vs
Junction Temperature
100
I
R
, Leakage Current (uA)
I
F
, Forward Current (mA)
100
10
1
10
1
0.1
0.1
0.01
0.01
0
1
V
F
, Forward Voltage (V)
2
0
100
T
J
, Junction Temperature (°C)
200
REV:A
QW-B0025
Page 2
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
