74HC245D
CMOS Digital Integrated Circuits
Silicon Monolithic
74HC245D
1. Functional Description
•
Octal Bus Transceiver
2. General
The 74HC245D is high speed CMOS OCTAL BUS TRANSCEIVERs fabricated with silicon gate C
2
MOS
technology.
They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
They are intended for two-way asynchronous communication between data busses. The direction of data
transmission is determined by the level of the DIR input.
The enable input ( G ) can be used to disable the device so that the busses are effectively isolated.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features (Note)
(1)
(2)
(3)
(4)
Note:
High speed: t
pd
= 10 ns (typ.) at V
CC
= 6.0 V
Low power dissipation: I
CC
= 4.0
µA
(max) at T
a
= 25
Balanced propagation delays: t
PLH
≈
t
PHL
Wide operating voltage range: V
CC(opr)
= 2.0 V to 6.0 V
Do not apply a signal to any bus terminal when it is in the output mode. Damage may result.
All floating (high impedance) bus terminals must have their input levels fixed by means of pull up or pull down
resistors.
4. Packaging
SOIC20
Start of commercial production
©2016 Toshiba Corporation
1
2016-04
2016-08-04
Rev.3.0
74HC245D
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
©2016 Toshiba Corporation
2
2016-08-04
Rev.3.0
74HC245D
8. Truth Table
Input G
L
L
H
Input DIR
L
H
X
A BUS
Output
Input
Z
B BUS
Input
Output
Z
Output
A=B
B=A
Z
X:
Z:
Don't care (L or H)
High impedance
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 1)
Note
Rating
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±20
±20
±35
±75
500
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: P
D
derates linearly with -8 mW/ above 85
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
t
r
,t
f
Test Condition
Rating
2.0 to 6.0
0 to V
CC
0 to V
CC
-40 to 125
0 to 50
Unit
V
V
V
µs
Note:
The operating ranges are required to ensure the normal operation of the device. Unused inputs and bus inputs
must be tied to either V
CC
or GND. Please connect both bus inputs and the bus outputs with V
CC
or GND when
the I/O of the bus terminal changes by the function. In this case, please note that the output is not short-circuited.
©2016 Toshiba Corporation
3
2016-08-04
Rev.3.0
74HC245D
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
2.0
4.5
6.0
Low-level input voltage
V
IL
2.0
4.5
6.0
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -20
µA
2.0
4.5
6.0
I
OH
= -6 mA
I
OH
= -7.8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 20
µA
4.5
6.0
2.0
4.5
6.0
I
OL
= 6 mA
I
OL
= 7.8 mA
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
4.5
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.18
5.68
Typ.
2.0
4.5
6.0
4.31
5.80
0.0
0.0
0.0
0.17
0.18
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.26
0.26
±0.5
±0.1
4.0
µA
µA
µA
V
V
V
Unit
V
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
2.0
4.5
6.0
Low-level input voltage
V
IL
2.0
4.5
6.0
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -20
µA
2.0
4.5
6.0
I
OH
= -6 mA
I
OH
= -7.8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 20
µA
4.5
6.0
2.0
4.5
6.0
I
OL
= 6 mA
I
OL
= 7.8 mA
3-state output OFF-state leakage
current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
4.5
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.13
5.63
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.33
0.33
±5.0
±1.0
40.0
µA
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
4
2016-08-04
Rev.3.0
74HC245D
11.3. DC Characteristics (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
2.0
4.5
6.0
Low-level input voltage
V
IL
2.0
4.5
6.0
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -20
µA
2.0
4.5
6.0
I
OH
= -6 mA
I
OH
= -7.8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 20
µA
4.5
6.0
2.0
4.5
6.0
I
OL
= 6 mA
I
OL
= 7.8 mA
3-state output OFF-state leakage
current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
4.5
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
3.7
5.2
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.4
0.4
±10.0
±1.0
160.0
µA
µA
µA
V
V
V
Unit
V
11.4. AC Characteristics (Unless otherwise specified, T
a
= 25
, Input: t
r
= t
f
= 6 ns)
Characteristics
Output transition time
Symbol
t
TLH
,t
THL
Note
Test Condition C
L
(pF)
50
V
CC
(V)
2.0
4.5
6.0
Propagation delay time
t
PLH
,t
PHL
50
2.0
4.5
6.0
150
2.0
4.5
6.0
3-state output enable time
t
PZL
,t
PZH
R
L
= 1 kΩ
50
2.0
4.5
6.0
150
2.0
4.5
6.0
3-state output disable time
t
PLZ
,t
PHZ
R
L
= 1 kΩ
50
2.0
4.5
6.0
Input capacitance
Power dissipation capacitance
C
IN
C
PD
(Note 1)
DIR, G
Min
Typ.
52
7
6
33
12
10
48
16
14
48
16
14
63
21
18
37
17
15
3
12
Max
60
12
10
90
18
15
120
24
20
150
30
26
180
36
31
150
30
26
pF
pF
ns
ns
ns
Unit
ns
Note 1: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
I
CC(opr)
= C
PD
×
V
CC
×
f
IN
+ I
CC
/8 (per bit)
©2016 Toshiba Corporation
5
2016-08-04
Rev.3.0
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