MMO 110
AC Controller Modules
Preliminary Data
A
I
RMS
=
112 A
I
TAVM
=
51 A
V
RRM
= 1200/1600 V
V
RSM
V
DSM
V
1300
1700
V
RRM
V
DRM
V
1200
1600
Typ
MMO 140-12io7
MMO 140-16io7
I/H
N
G/F
Symbol
I
RMS
I
TRMS
I
TAVM
I
TSM
Conditions
T
C
= 85°C; 50-400 Hz (per single controller)
T
C
= 85°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
t = 10 ms
t = 8.3 ms
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
(50 Hz)
(60 Hz)
Maximum Ratings
112
81
51
1000
1070
870
930
5000
4810
3780
3630
100
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
Features
• Thyristor controller for AC
(circuit W1C acc. to IEC) for mains
frequency
• Isolation voltage 3000 V~
•
Planar glass passivated chips
•
Low forward voltage drop
•
Leads suitable for PC board soldering
Applications
• Switching and control of single and
three phase AC circuits
•
Light and temperature control
•
Softstart AC motor controller
•
Solid state switches
Advantages
T
VJ
= 125°C; t = 10 ms
V
R
= 0
t = 8.3 ms
I
2
t
T
VJ
= 45°C;
V
R
= 0
t = 10 ms
t = 8.3 ms
T
VJ
= 125°C; t = 10 ms
V
R
= 0
t = 8.3 ms
(di/dt)
cr
T
VJ
= 125°C;
repetitive, I
T
= 50 A
f = 50 Hz; t
p
= 200 µs;
V
D
=
2
/
3
V
DRM
;
I
G
= 0.45 A;
di
G
/dt = 0.45 A/µs
non repetitive, I
T
= I
TAVM
500
1000
10
5
0.5
10
-40...+150
150
-40...+125
A/µs
V/µs
W
W
W
V
°C
°C
°C
V~
V~
Nm
lb.in.
g
(dv/dt)
cr
P
GM
P
GAVM
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
= 125°C; V
D
=
2
/
3
V
DRM
;
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= 125°C;
I
T
= I
T(AV)M
;
t
p
= 30 ms
t
p
= 300 ms
•
Easy to mount with two screws
•
Space and weight savings
• Improved temperature and power
cycling
•
High power density
•
Small and light weight
50/60 Hz, RMS
I
ISOL
< 1 mA
Mounting torque (M4)
t = 1 min
t=1s
2500
3000
1.5 - 2.0
14 - 18
18
Typical including screws
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
20170321b
© 2017 IXYS All rights reserved
1-2
MMO 110
Symbol
I
D
, I
R
V
T
V
T0
r
t
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
R
thJC
R
thCH
R
thJC
R
thCH
d
S
d
A
a
Conditions
V
R
/ V
D
= V
RRM
/ V
DRM
I
T
= 150 A
For power-loss calculations only
V
D
= 6 V
V
D
= 6 V
V
D
=
2
/
3
V
DRM
;
t
p
= 10 µs;
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
V
D
= 6 V; R
GK
=
∞;
V
D
= ½V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
per thyristor; DC current
per module
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
5
1.57
0.85
5.60
1.5
1.9
100
200
0.2
1
200
100
2
0.80
0.12
0.40
0.06
11.2
5.0
50
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
I
GD
, T
VJ
= 125°C
4: P
GAV
= 0.5 W
5: P
GM
=
5W
6: P
GM
= 10 W
10
2
10
3
I
G
3
1
1
4
2
5
6
V
G
10
1: I
GT
, T
VJ
= 125°C
V
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
mA
µs
K/W
K/W
K/W
K/W
mm
mm
m/s
2
0.1
10
0
10
1
mA
10
4
Fig. 1 Gate trigger characteristics
1000
T
VJ
= 25°C
µs
t
gd
typ.
100
Limit
Dimensions in mm (1 mm = 0.0394")
10
1
10
100
I
G
mA
1000
Fig. 2 Gate trigger delay time
IXYS reserves the right to change limits, test conditions and dimensions.
20170321b
© 2017 IXYS All rights reserved
2-2
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