Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors;
R1 = 47 k, R2 = 47 k and R1 = 2.2 k, R2 = 47 k
Rev. 6 — 24 January 2012
Product data sheet
1. Product profile
1.1 General description
NPN/PNP double Resistor-Equipped Transistors (RET) in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
PEMD48
PUMD48
SOT666
SOT363
JEITA
-
SC-88
Package
configuration
ultra small and flat lead
very small
Type number
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
33
0.8
1.54
17
Typ
-
-
47
1.0
2.20
21
Max
50
100
61
1.2
2.86
26
k
Unit
V
mA
k
Per transistor; for the PNP transistor with negative polarity
Transistor TR1 (NPN)
Transistor TR2 (PNP)
NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
TR1
R2
R1
R1
R2
TR2
Simplified outline
Graphic symbol
PEMD48 (SOT666)
6
5
4
6
5
4
1
2
3
006aaa143
PUMD48 (SOT363)
1
2
3
4
5
6
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
TR1
R2
R1
R1
R2
TR2
6
5
4
6
5
4
1
2
3
006aaa143
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMD48
PUMD48
-
SC-88
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMD48
PUMD48
[1]
* = placeholder for manufacturing site code.
Marking codes
Marking code
[1]
48
4*8
Type number
PEMD48_PUMD48
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 24 January 2012
2 of 16
NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
TR1 (NPN)
TR2 (PNP)
V
I
input voltage TR1
positive
negative
input voltage TR2
positive
negative
I
O
I
CM
P
tot
output current
peak collector current
total power dissipation
PEMD48 (SOT666)
PUMD48 (SOT363)
Per device
P
tot
total power dissipation
PEMD48 (SOT666)
PUMD48 (SOT363)
T
j
T
amb
T
stg
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
-
-
-
Max
50
50
10
5
+40
10
+5
12
100
100
200
200
Unit
V
V
V
V
V
V
V
V
mA
mA
mW
mW
Per transistor; for the PNP transistor with negative polarity
T
amb
25
C
[1][2]
[1]
-
-
T
amb
25
C
[1][2]
[1]
-
-
-
65
65
300
300
150
+150
+150
mW
mW
C
C
C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
PEMD48_PUMD48
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 24 January 2012
3 of 16
NXP Semiconductors
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
400
P
tot
(mW)
300
006aac749
200
100
0
-75
-25
25
75
125
175
T
amb
(°C)
SOT363 and SOT666; FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curve
6. Thermal characteristics
10
3
duty cycle = 1
Z
th(j-a)
(K/W)
10
2
0.1
0.05
0.02
0.01
0.75
0.5
0.33
0.2
006aac751
10
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration for
PEMD48 (SOT666); typical values
PEMD48_PUMD48
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 24 January 2012
4 of 16
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
