PD - 96966B
PDP MOSFET
Features
l
Advanced process technology
l
Key parameters optimized for PDP Sustain &
Energy Recovery applications
l
Low E
PULSE
rating to reduce the power
dissipation in Sustain & ER applications
l
Low Q
G
for fast response
l
High repetitive peak current capability for
reliable operation
l
Short fall & rise times for fast switching
l
175°C operating junction temperature for
improved ruggedness
l
Repetitive avalanche capability for robustness
and reliability
IRFP4242PbF
Key Parameters
300
360
49
93
175
D
D
V
DS
min
V
DS (Avalanche)
typ.
R
DS(ON)
typ. @ 10V
I
RP
max @ T
C
= 100°C
T
J
max
V
V
m
:
A
°C
G
S
G
D
S
TO-247AC
D
S
G
G a te
D ra in
S o u rc e
Description
This
HEXFET
®
Power MOSFET
is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This
MOSFET
utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low E
PULSE
rating. Additional features of this
MOSFET
are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this
MOSFET
a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
I
RP
@ T
C
= 100°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
10lb in (1.1N m)
Max.
±30
46
33
190
93
430
210
2.9
-40 to + 175
300
Units
V
A
c
Repetitive Peak Current
g
W
W/°C
°C
x
x
N
Thermal Resistance
R
θJC
Junction-to-Case
f
Parameter
Typ.
–––
Max.
0.35
Units
°C/W
Notes
through
are on page 8
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1
09/14/07
IRFP4242PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
g
fs
Q
g
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
st
E
PULSE
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Shoot Through Blocking Time
Energy per Pulse
Min.
300
–––
–––
3.0
–––
–––
–––
–––
–––
78
–––
–––
–––
–––
–––
–––
100
–––
–––
Typ. Max. Units
–––
220
49
–––
-15
–––
–––
–––
–––
–––
165
61
40
71
72
48
–––
1960
3740
7370
520
220
320
5.0
13
–––
–––
59
5.0
–––
5.0
150
100
-100
–––
247
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nH
–––
pF
ns
µJ
Conditions
V
GS
= 0V, I
D
= 250µA
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 33A
V
V
DS
= V
GS
, I
D
= 250µA
e
mV/°C
µA V
DS
= 240V, V
GS
= 0V
V
DS
= 240V, V
GS
= 0V, T
J
= 125°C
nA
S
nC
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 33A
V
DD
= 150V, I
D
= 33A, V
GS
= 10V
V
DD
= 150V, V
GS
= 10V
ns
I
D
= 33A
R
G
= 5.0Ω
See Fig. 22
V
DD
= 240V, V
GS
= 15V, R
G
= 5.1Ω
L = 220nH, C= 0.4µF, V
GS
= 15V
V
DS
= 240V, R
G
= 4.7Ω, T
J
= 25°C
L = 220nH, C= 0.4µF, V
GS
= 15V
V
DS
= 240V, R
G
= 4.7Ω, T
J
= 100°C
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz,
See Fig.9
V
GS
= 0V, V
DS
= 0V to 240V
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
S
D
e
Ãe
C
iss
C
oss
C
rss
C
oss
eff.
L
D
L
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
–––
–––
Avalanche Characteristics
E
AS
E
AR
V
DS(Avalanche)
I
AS
d
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Ã
Avalanche Current
Ãd
Single Pulse Avalanche Energy
Parameter
Typ.
Max.
Units
mJ
mJ
V
A
–––
–––
360
–––
700
43
–––
33
Diode Characteristics
Parameter
I
S
@ T
C
= 25°C Continuous Source Current
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
300
2330
46
A
190
1.0
450
3500
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 33A, V
GS
= 0V
T
J
= 25°C, I
F
= 33A, V
DD
= 50V
di/dt = 100A/µs
Ã
e
e
2
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IRFP4242PbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
VGS
15V
10V
8.0V
7.0V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
100
7.0V
100
7.0V
10
10
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000.0
Fig 2.
Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
3.0
ID = 33A
VGS = 10V
100.0
TJ = 175°C
TJ = 25°C
10.0
2.5
2.0
1.5
VDS = 30V
1.0
4.0
5.0
6.0
1.0
≤
60µs PULSE WIDTH
7.0
8.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
4000
4000
3500
Energy per pulse (µJ)
3000
2500
2000
1500
1000
500
180
Energy per pulse (µJ)
L = 220nH
C = 0.4µF
100°C
25°C
3000
L = 220nH
C = Variable
100°C
25°C
2000
1000
0
200
220
240
170
180
190
200
210
220
230
240
250
VDS, Drain-to -Source Voltage (V)
ID, Peak Drain Current (A)
Fig 5.
Typical E
PULSE
vs. Drain-to-Source Voltage
Fig 6.
Typical E
PULSE
vs. Drain Current
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3
IRFP4242PbF
5000
1000.0
L = 220nH
4000
Energy per pulse (µJ)
C= 0.4µF
C= 0.3µF
C= 0.2µF
ISD, Reverse Drain Current (A)
100.0
TJ = 175°C
3000
10.0
2000
1000
1.0
TJ = 25°C
VGS = 0V
0
25
50
75
100
125
150
0.1
0.2
0.4
0.6
0.8
1.0
1.2
Temperature (°C)
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical E
PULSE
vs.Temperature
12000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
Fig 8.
Typical Source-Drain Diode Forward Voltage
20
VGS, Gate-to-Source Voltage (V)
ID= 33A
VDS= 240V
VDS= 150V
VDS= 60V
10000
16
C, Capacitance (pF)
Ciss
12
6000
8
4000
4
2000
Coss
Crss
1
10
100
1000
0
0
0
40
80
120
160
200
240
280
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 10.
Typical Gate Charge vs.Gate-to-Source Voltage
1000
48
42
ID , Drain Current (A)
36
30
24
18
12
6
0
25
50
75
100
125
150
175
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1µsec
100
10
100µsec
10µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
TC , CaseTemperature (°C)
VDS , Drain-to-Source Voltage (V)
Fig 11.
Maximum Drain Current vs. Case Temperature
Fig 12.
Maximum Safe Operating Area
4
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IRFP4242PbF
(
RDS (on), Drain-to -Source On Resistance m
Ω)
EAS, Single Pulse Avalanche Energy (mJ)
600
3000
ID = 33A
500
2500
I D
TOP
4.9A
6.3A
BOTTOM
33A
400
2000
300
1500
200
TJ = 125°C
TJ = 25°C
1000
100
500
0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
Starting TJ , Junction Temperature (°C)
Fig 13.
On-Resistance Vs. Gate Voltage
5.0
Fig 14.
Maximum Avalanche Energy Vs. Temperature
140
120
VGS(th) Gate threshold Voltage (V)
4.5
Repetitive Peak Current (A)
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
4.0
3.5
3.0
2.5
2.0
1.5
-75 -50 -25
0
25
50
ID = 250µA
100
80
60
40
20
0
75
100 125 150 175
25
50
75
100
125
150
175
TJ , Temperature ( °C )
Case Temperature (°C)
Fig 15.
Threshold Voltage vs. Temperature
1
Fig 16.
Typical Repetitive peak Current vs.
Case temperature
Thermal Response ( ZthJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
τ
C
τ
1
τ
2
τ
0.01
Ri (°C/W)
τi
(sec)
0.1315 0.000555
0.2186
0.023373
0.001
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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