d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
www.vishay.com
1
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
52
32
Maximum
62.5
40
Unit
°C/W
Si4906DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1.7 A
0.79
30
30
17
13
T
C
= 25 °C
2.5
30
1.2
45
45
A
V
ns
nC
ns
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
= 4
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
DD
= 20 V, R
L
= 4
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 5 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
=
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 4 A
V
DS
= 15 V, I
D
= 5 A
20
0.032
0.041
15
625
88
50
14.4
6.6
1.6
2.3
2.3
9
51
21
6
13
85
17
7
3.5
15
77
32
10
20
128
26
11
ns
Ω
22
10
nC
pF
0.039
0.050
0.8
Min.
40
40
- 4.6
2.2
100
1
10
Typ.
a
Max.
Unit
V
mV/°C
V
nA
µA
A
Ω
S
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
Si4906DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
30
V
GS
= 10
V
thru 4
V
I
D
- Drain C
u
rrent (A)
25 °C, unless otherwise noted
2.0
24
I
D
- Drain C
u
rrent (A)
1.6
18
1.2
12
3
V
6
0.8
T
C
= 125 °C
0.4
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.0
0.8
1.6
2.4
3.2
4.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.060
900
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.052
V
GS
= 4.5
V
0.044
C - Capacitance (pF)
720
C
iss
540
0.036
V
GS
= 10
V
0.028
360
C
oss
180
C
rss
0.020
0
4
8
12
16
20
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 5 A
V
G S
- Gate-to-So
u
rce
V
oltage (
V
)
8
R
DS(on)
- On-Resistance
1.5
V
DS
= 10
V
6
V
DS
= 20
V
V
DS
= 30
V
1.8
I
D
= 5 A
Capacitance
V
GS
= 10
V
(
N
ormalized)
V
GS
= 4.5
V
1.2
4
0.9
2
0
0
3
6
9
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
www.vishay.com
3
Si4906DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
0.30
0.24
I
S
- So
u
rce C
u
rrent (A)
10
T
J
= 150 °C
0.18
25 °C
1
0.12
125 °C
0.06
25 °C
0.00
0
2
4
6
8
10
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
I
D
= 250
µA
0.2
V
GS(th)
Variance
(V)
80
100
On-Resistance vs. Gate-to-Source Voltage
I
D
= 5 mA
- 0.2
Po
w
er (
W
)
0.0
60
40
- 0.4
20
- 0.6
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain C
u
rrent (A)
1 ms
1
10 ms
100 ms
0.1
1s
10 s
DC
0.01
0.1
T
A
= 25 °C
Single Pulse
1
100
10
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
*
V
GS
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
Si4906DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
8
6
I
D
- Drain C
u
rrent (A)
5
3
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
4.0
1.5
3.2
1.2
Po
w
er (
W
)
1.6
Po
w
er (W)
0
25
50
75
100
125
150
2.4
0.9
0.6
0.8
0.3
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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