74ABT541
Octal buffer/line driver; 3-state
Rev. 3 — 11 August 2014
Product data sheet
1. General description
The 74ABT541 high-performance BiCMOS device combines low static and dynamic
power dissipation with high speed and high output drive.
The 74ABT541 device is an octal buffer that is ideal for driving bus lines. The outputs are
all capable of sinking 64 mA and sourcing 32 mA. The device features input and outputs
on opposite sides of the package to facilitate printed circuit board layout.
2. Features and benefits
Octal bus interface
Functions similar to the 74ABT241
Provides ideal interface and increases fan-out of MOS microprocessors
Efficient pinout to facilitate PC board layout
3-State buffer outputs sink 64 mA and source 32 mA
Live insertion/extraction permitted
Power-up 3-state
Latch-up protection exceeds 500 mA per JESD78 class II level A
ESD protection:
HBM JESD22-A114E exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74ABT541N
74ABT541D
74ABT541DB
74ABT541PW
40 C
to +85
C
40 C
to +85
C
40 C
to +85
C
40 C
to +85
C
Name
DIP20
SO20
SSOP20
TSSOP20
Description
plastic dual in-line package; 20 leads (300 mil)
plastic small outline package; 20 leads;
body width 7.5 mm
plastic shrink small outline package; 20 leads;
body width 5.3 mm
plastic thin shrink small outline package; 20 leads;
body width 4.4 mm
Version
SOT146-1
SOT163-1
SOT339-1
SOT360-1
Type number
NXP Semiconductors
74ABT541
Octal buffer/line driver; 3-state
4. Functional diagram
A0
Y0
2
18
3
A1
Y1
17
4
A2
Y2
16
5
A3
Y3
15
6
A4
Y4
14
1
19
&
EN
18
17
16
15
14
13
12
11
mna898
7
A5
Y5
13
2
3
8
A6
Y6
12
4
5
9
A7
Y7
11
6
7
OE1
1
19
OE2
mna900
8
9
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
5. Pinning information
5.1 Pinning
74ABT541
OE1
A0
A1
A2
A3
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
20 V
CC
19 OE2
18 Y0
17 Y1
16 Y2
15 Y3
14 Y4
13 Y5
12 Y6
11 Y7
aaa-011795
GND 10
Fig 3.
Pin configuration for SO20 and (T)SSOP20
74ABT541
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 11 August 2014
2 of 15
NXP Semiconductors
74ABT541
Octal buffer/line driver; 3-state
5.2 Pin description
Table 2.
Symbol
OE1, OE2
A[0:7]
GND
Y[0:7]
V
CC
Pin description
Pin
1, 19
2, 3, 4, 5, 6, 7, 8, 9
10
20
Description
output enable input (active LOW)
data input
ground (0 V)
supply voltage
18, 17, 16, 15, 14, 13, 12, 11 data output
6. Functional description
Table 3.
Control
OE1
L
L
X
H
[1]
Functional table
[1]
Input
OE2
L
L
H
X
An
L
H
X
X
Output
Yn
L
H
Z
Z
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
7. Limiting values
Table 4.
Limiting values
[3]
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
T
j
T
stg
P
tot
[1]
[2]
[3]
[4]
Parameter
supply voltage
input voltage
output voltage
input clamping current
output clamping current
output current
junction temperature
storage temperature
total power dissipation
Conditions
[1]
Min
0.5
1.2
0.5
18
50
-
[3]
Max
+7.0
+7.0
+5.5
-
-
128
150
+150
500
Unit
V
V
V
mA
mA
mA
C
C
mW
output in OFF-state or HIGH-state
V
I
< 0 V
V
O
< 0 V
output in LOW-state
[2]
-
65
-
T
amb
=
40 C
to +85
C
[4]
The minimum input voltage ratings may be exceeded if the input current ratings are observed.
The output voltage ratings may be exceeded if the output current ratings are observed.
The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability.
For SO20 packages: above 70
C
the value of P
tot
derates linearly with 8 mW/K.
For (T)SSOP20 packages: above 60
C
the value of P
tot
derates linearly with 5.5 mW/K.
74ABT541
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 11 August 2014
3 of 15
NXP Semiconductors
74ABT541
Octal buffer/line driver; 3-state
8. Recommended operating conditions
Table 5.
Operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
V
IH
V
IL
I
OH
I
OL
t/V
T
amb
Parameter
supply voltage
input voltage
HIGH-level input voltage
LOW-level input voltage
HIGH-level output current
LOW-level output current
input transition rise and fall rate
ambient temperature
in free air
Conditions
Min
4.5
0
2.0
-
32
-
0
40
Typ
-
-
-
-
-
-
-
-
Max
5.5
V
CC
-
0.8
-
64
5
+85
Unit
V
V
V
V
mA
mA
ns/V
C
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol
V
IK
V
OH
Parameter
Conditions
25
C
Min
input clamping voltage V
CC
= 4.5 V; I
IK
=
18
mA
HIGH-level output
voltage
V
I
= V
IL
or V
IH
V
CC
= 4.5 V; I
OH
=
3
mA
V
CC
= 5.0 V; I
OH
=
3
mA
V
CC
= 4.5 V; I
OH
=
32
mA
V
OL
I
I
I
OFF
I
O(pu/pd)
I
OZ
LOW-level output
voltage
input leakage current
power-off leakage
current
V
CC
= 4.5 V; I
OL
= 64 mA;
V
I
= V
IL
or V
IH
V
CC
= 5.5 V; V
I
= GND or 5.5 V
V
CC
= 0.0 V; V
I
or V
O
4.5 V
[1]
40 C
to +85
C
Unit
Typ
0.9
2.9
3.4
2.4
0.42
0.01
5.0
5.0
Max
1.2
-
-
-
0.55
1.0
100
50
Min
-
2.5
3.0
2.0
-
-
-
-
Max
1.2
-
-
-
0.55
1.0
100
50
V
V
V
V
V
A
A
A
-
2.5
3.0
2.0
-
-
-
-
power-up/power-down V
CC
= 2.0 V; V
O
= 0.5 V;
output current
V
I
= GND or V
CC
; OE = don’t care
OFF-state output
current
V
CC
= 5.5 V; V
I
= V
IL
or V
IH
V
O
= 2.7 V
V
O
= 0.5 V
-
-
-
[2]
5.0
5.0
5.0
100
0.5
24
0.5
50
50
50
180
250
30
250
-
-
-
40
-
-
-
50
50
50
180
250
30
250
A
A
A
mA
A
mA
A
I
LO
I
O
I
CC
output leakage current HIGH-state; V
O
= 5.5 V;
V
CC
= 5.5 V; V
I
= GND or V
CC
output current
supply current
V
CC
= 5.5 V; V
O
= 2.5 V
V
CC
= 5.5 V; V
I
= GND or V
CC
outputs HIGH-state
outputs LOW-state
outputs disabled
40
-
-
-
74ABT541
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 11 August 2014
4 of 15
NXP Semiconductors
74ABT541
Octal buffer/line driver; 3-state
Table 6.
Static characteristics
…continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol
I
CC
Parameter
additional supply
current
Conditions
per input pin; output enabled;
V
CC
= 5.5 V; one input at 3.4 V,
other inputs at V
CC
or GND
per input pin; output disabled;
V
CC
= 5.5 V; one data input at
3.4 V, other inputs at V
CC
or GND
per input pin; output disabled;
V
CC
= 5.5 V; one enable input at
3.4 V, other inputs at V
CC
or GND
C
I
C
O
[1]
[2]
[3]
[3]
25
C
Min
-
Typ
0.5
Max
1.5
40 C
to +85
C
Unit
Min
-
Max
1.5
mA
-
0.5
50
-
50
A
-
0.5
1.5
-
1.5
mA
input capacitance
output capacitance
V
I
= 0 V or V
CC
outputs disabled; V
O
= 0 V or V
CC
-
-
4
7
-
-
-
-
-
-
pF
pF
This parameter is valid for any V
CC
between 0 V and 2.1 V, with a transition time of up to 10 ms. From V
CC
= 2.1 V to V
CC
= 5 V
10 %,
a transition time of up to 100
s
is permitted.
Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
This is the increase in supply current for each input at 3.4 V.
10. Dynamic characteristics
Table 7.
Dynamic characteristics
GND = 0 V. Test circuit is shown in
Figure 6.
Symbol Parameter
Conditions
25
C;
V
CC
= 5.0 V
Min
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
LOW to HIGH
propagation delay
HIGH to LOW
propagation delay
OFF-state to HIGH
propagation delay
OFF-state to LOW
propagation delay
HIGH to OFF-state
propagation delay
LOW to OFF-state
propagation delay
An to Yn, see
Figure 4
An to Yn, see
Figure 4
OEn to Yn; see
Figure 5
OEn to Yn; see
Figure 5
OEn to Yn; see
Figure 5
OEn to Yn; see
Figure 5
1.0
1.0
1.1
2.1
2.1
1.7
Typ
2.6
2.9
3.1
4.4
5.1
4.7
Max
4.1
4.2
4.8
5.9
6.6
6.2
40 C
to +85
C;
V
CC
= 5.0 V
0.5 V
Min
1.0
1.0
1.1
2.1
2.1
1.7
Max
4.6
4.6
5.3
6.4
7.1
6.7
ns
ns
ns
ns
ns
ns
Unit
74ABT541
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 11 August 2014
5 of 15
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