TZX-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 36
2; 5
Pulse current
Single
UNIT
V
mA
ORDERING INFORMATION
DEVICE NAME
TZX-series
TZX-series
ORDERING CODE
TZX-series-TAP
TZX-series-TR
TAPED UNITS PER REEL
10 000 per ammopack
(52 mm tape)
10 000 per 14" reel
(52 mm tape)
MINIMUM ORDER QUANTITY
30 000/box
30 000/box
PACKAGE
PACKAGE NAME
DO-35
WEIGHT
125 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 200 mA
l = 4 mm, T
L
=constant
TEST CONDITION
l = 4 mm, T
L
= 25 °C
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
500
P
tot
/V
Z
300
175
- 65 to + 175
1.5
UNIT
mW
mA
K/W
°C
°C
V
Rev. 2.4, 14-Apr-14
Document Number: 85614
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TZX-Series
www.vishay.com
Vishay Semiconductors
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
V
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
2
2
2
2
2
2
2
4
4
4
4
4
4
4
4
4
MAX.
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
40
40
40
40
40
15
15
15
15
15
15
15
15
15
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
V
Z
at I
ZT1
V
MIN.
TZX2V4A
TZX2V4B
TZX2V7A
TZX2V7B
TZX2V7C
TZX3V0A
TZX3V0B
TZX3V0C
TZX3V3A
TZX3V3B
TZX3V3C
TZX3V6A
TZX3V6B
TZX3V6C
TZX3V9A
TZX3V9B
TZX3V9C
TZX4V3A
TZX4V3B
TZX4V3C
TZX4V3D
TZX4V7A
TZX4V7B
TZX4V7C
TZX4V7D
TZX5V1A
TZX5V1B
TZX5V1C
TZX5V1D
TZX5V6A
TZX5V6B
TZX5V6C
TZX5V6D
TZX5V6E
TZX6V2A
TZX6V2B
TZX6V2C
TZX6V2D
TZX6V2E
TZX6V8A
TZX6V8B
TZX6V8C
TZX6V8D
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
6
6.1
6.3
6.4
6.6
6.7
6.9
MAX.
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.5
5.6
5.7
5.8
5.9
6
6.1
6.3
6.4
6.6
6.7
6.9
7
7.2
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
TEST CURRENT
I
ZT1
mA
μA
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1
1
1
1
1
1.5
1.5
1.5
1.5
2
2
2
2
2
2
2
2
2
2
2
2
2
3
3
3
3
3
3.5
3.5
3.5
3.5
REVERSE LEAKAGE CURRENT
I
R
at V
R
V
I
R
at V
R (1)
μA
MAX.
50
50
10
10
10
6
6
6
2
2
2
2
2
2
2
2
2
1
1
1
1
6
5
4
3
2
2
2
2
1
1
1
1
1
3
3
3
3
3
2
2
2
2
Rev. 2.4, 14-Apr-14
Document Number: 85614
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TZX-Series
www.vishay.com
Vishay Semiconductors
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
V
6.65
6.84
6.94
7.13
6.72
7.32
7.5
7.7
7.98
8.08
8.27
8.46
8.65
8.84
9.03
9.22
9.41
9.69
9.88
10.2
10.4
10.5
10.8
11
11.3
11.6
10.9
11.8
12
12.3
12.5
12.8
13.1
13.4
13.8
14.2
13.6
14.5
14.9
15.5
16.1
16.6
17.2
17.9
18.5
19.2
19.9
MAX.
15
15
15
15
15
20
20
20
20
20
20
20
20
20
25
25
25
25
25
25
25
25
35
35
35
35
35
35
35
35
35
35
35
40
40
40
40
45
45
45
55
55
55
60
60
60
65
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
V
Z
at I
ZT1
V
MIN.
TZX7V5A
TZX7V5B
TZX7V5C
TZX7V5D
TZX7V5X
TZX8V2A
TZX8V2B
TZX8V2C
TZX8V2D
TZX9V1A
TZX9V1B
TZX9V1C
TZX9V1D
TZX9V1E
TZX10A
TZX10B
TZX10C
TZX10D
TZX11A
TZX11B
TZX11C
TZX11D
TZX12A
TZX12B
TZX12C
TZX12D
TZX12X
TZX13A
TZX13B
TZX13C
TZX14A
TZX14B
TZX14C
TZX15A
TZX15B
TZX15C
TZX15X
TZX16A
TZX16B
TZX16C
TZX18A
TZX18B
TZX18C
TZX20A
TZX20B
TZX20C
TZX22A
Rev. 2.4, 14-Apr-14
7
7.2
7.3
7.5
7.07
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.2
10.4
10.7
10.9
11.1
11.4
11.6
11.9
12.2
11.44
12.4
12.6
12.9
13.2
13.5
13.8
14.1
14.5
14.9
14.35
15.3
15.7
16.3
16.9
17.5
18.1
18.8
19.5
20.2
20.9
MAX.
7.3
7.6
7.7
7.9
7.45
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
12.1
12.4
12.7
12.03
12.9
13.1
13.4
13.7
14
14.3
14.7
15.1
15.5
15.09
15.9
16.5
17.1
17.7
18.3
19
19.7
20.4
21.2
21.9
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
TEST CURRENT
I
ZT1
mA
μA
MAX.
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
5
5
5
5
5
6.2
6.2
6.2
6.2
6.8
6.8
6.8
6.8
6.8
7.5
7.5
7.5
7.5
8.2
8.2
8.2
8.2
9.5
9.5
9.5
9.5
9.5
10
10
10
11
11
11
11.5
11.5
11.5
11.5
12
12
12
13
13
13
15
15
15
17
REVERSE LEAKAGE CURRENT
I
R
at V
R
V
I
R
at V
R (1)
μA
MAX.
30
30
30
30
30
0.1
0.1
0.1
0.1
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
Document Number: 85614
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TZX-Series
www.vishay.com
Vishay Semiconductors
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
V
20.5
21.2
21.8
22.4
23.1
21.5
23.9
24.9
25.8
25.6
26.8
27.7
28.7
27.6
29.6
30.6
31.5
32.5
33.5
34.6
33.6
MAX.
65
65
70
70
70
70
80
80
80
80
100
100
100
100
120
120
120
140
140
140
140
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
V
Z
at I
ZT1
V
MIN.
TZX22B
TZX22C
TZX24A
TZX24B
TZX24C
TZX24X
TZX27A
TZX27B
TZX27C
TZX27X
TZX30A
TZX30B
TZX30C
TZX30X
TZX33A
TZX33B
TZX33C
TZX36A
TZX36B
TZX36C
TZX36X
21.6
22.3
22.9
23.6
24.3
22.61
25.2
26.2
27.2
26.99
28.2
29.2
30.2
29.02
31.2
32.2
33.2
34.2
35.3
36.4
35.36
MAX.
22.6
23.3
24
24.7
25.5
23.77
26.6
27.6
28.6
28.39
29.6
30.6
31.6
30.51
32.6
33.6
34.5
35.7
36.8
38
37.19
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
TEST CURRENT
I
ZT1
mA
μA
MAX.
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
17
17
19
19
19
19
21
21
21
21
23
23
23
23
25
25
25
27
27
27
27
REVERSE LEAKAGE CURRENT
I
R
at V
R
V
I
R
at V
R (1)
μA
MAX.
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
Notes
• Additional measurement of voltage group TZM9V1 to TZX36, I
R
at 95 % V
Zmin.
40 nA at T
j
= 25 °C
(1)
Additional measurement
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
R
thJA
- Therm. Resist. Junction Ambient (K/W)
500
400
300
l
200
100
T
L
= constant
0
0
5
10
15
20
95 9611
P
tot
- Total Power Dissipation (mW)
600
500
400
300
200
100
0
0
80
120 160 200
40
T
amb
- Ambient Temperature (°C)
l
I - Lead Length (mm)
95 9602
Fig. 1 -
Thermal Resistance vs. Lead Length
Fig. 2 -
Total Power Dissipation vs. Ambient Temperature
Rev. 2.4, 14-Apr-14
Document Number: 85614
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TZX-Series
www.vishay.com
Vishay Semiconductors
200
1000
C
D
- Diode Capacitance (pF)
V
Z
-
Voltage
Change (mV)
150
V
R
= 2
V
T
j
= 25 °C
100
100
I
Z
= 5 mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Fig. 3 -
Typical Change of
Working
Voltage under Operating
Conditions at T
amb
= 25 °C
Fig. 6 -
Diode Capacitance vs. Z-Voltage
1.3
100
V
Ztn
- Relative Voltage Change
V
Ztn
= V
Zt
/V
Z
(25 °C)
I
F
- Forward Current (mA)
1.2
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
10
1.1
1
T
j
= 25 °C
1.0
0.9
0
- 2 x 10
-4
/K
- 4 x 10
-4
/K
0.1
0.01
0.8
- 60
95 9599
0.001
0
60
120
180
240
959605
0
0.2
0.4
0.6
0.8
1.0
T
j
- Junction Temperature (°C)
V
F
- Forward
Voltage
(V)
Fig. 4 - Typical Change of Working Voltage vs.
Junction Temperature
Fig. 7 -
Forward Current vs. Forward Voltage
100
15
TK
VZ
- Temperature Coefficient
of
V
Z
(10
-4
/K)
80
10
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
60
5
I
Z
= 5 mA
0
40
20
0
-5
0
4
6
8
12
20
0
95 9600
10
20
30
40
50
95 9604
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Fig. 8 -
Z-Current vs. Z-Voltage
Fig. 5 -
Temperature Coefficient of Vz vs. Z-Voltage
Rev. 2.4, 14-Apr-14
Document Number: 85614
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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