PD - 94980
IRF9530NPbF
l
l
l
l
l
l
l
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
V
DSS
= -100V
R
DS(on)
= 0.20Ω
G
S
I
D
= -14A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
-14
-10
-56
79
0.53
± 20
250
-8.4
7.9
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
0.50
Max.
1.9
62
Units
°C/W
02/04/04
IRF9530NPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-100
-2.0
3.2
Typ.
-0.11
15
58
45
46
4.5
7.5
760
260
170
Max. Units
Conditions
V
V
GS
= 0V, I
D
= -250µA
V/°C Reference to 25°C, I
D
= -1mA
0.20
Ω
V
GS
= -10V, I
D
= -8.4A
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
S
V
DS
= -50V, I
D
= -8.4A
-25
V
DS
= -100V, V
GS
= 0V
µA
-250
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
58
I
D
= -8.4A
8.3
nC V
DS
= -80V
32
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -50V
I
D
= -8.4A
ns
R
G
= 9.1Ω
R
D
= 6.2Ω, See Fig. 10
Between lead,
6mm (0.25in.)
nH
G
from package
and center of die contact
V
GS
= 0V
pF
V
DS
= -25V
= 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
-14
showing the
A
G
integral reverse
-56
p-n junction diode.
S
-1.6
V
T
J
= 25°C, I
S
= -8.4A, V
GS
= 0V
130 190
ns
T
J
= 25°C, I
F
= -8.4A
650 970
nC
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 7.0mH
max. junction temperature. ( See fig. 11 )
I
SD
≤
-8.4A, di/dt
≤
-490A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
R
G
= 25Ω, I
AS
= -8.4A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
IRF9530NPbF
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
100
-ID , Drain-to-Source Current (A)
10
-ID , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
10
1
-4.5V
-4.5V
1
0.1
0.1
1
20µs PULSE WIDTH
Tc = 25°C
A
10
100
0.1
0.1
20µs PULSE WIDTH
T
C
= 175°C
1
10
100
A
-VDS , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
2.5
I
D
= -14A
-I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25°C
10
T
J
= 175°C
1.5
1.0
1
0.5
0.1
4
5
6
7
V
DS
= -50V
20µs PULSE WIDTH
8
9
10
A
0.0
-60 -40 -20 0
V
GS
= -10V
20 40 60 80 100 120 140 160 180
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF9530NPbF
2000
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -8.4A
V
DS
=-80V
V
DS
=-50V
V
DS
=-20V
C, Capacitance (pF)
15
1200
C
iss
10
800
C
oss
C
rss
5
400
0
1
10
100
A
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
20
30
40
50
60
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
I
T
J
= 150°C
T
J
= 25°C
100
10us
100us
10
1ms
1
0.1
0.4
0.6
0.8
1.0
1.2
V
GS
= 0V
1.4
A
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
10ms
100
1000
1.6
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF9530NPbF
14
V
DS
12
R
D
V
GS
R
G
-10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-I
D
, Drain Current (A)
8
6
4
2
V
GS
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
0
25
50
T
C
, Case Temperature ( °C)
75
100
125
150
175
10%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
10
V
DD
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