5th Generation thinQ!™ SiC Schottky Diode
1
Description
ThinQ!™ Generation 5 represents Infineon
leading edge technology for the SiC
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,
already introduced with G3 is now combined with a new, more compact design and
thin-wafer technology. The result is a new family of products showing improved
efficiency over all load conditions, resulting from both the improved thermal
characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures
meeting the most stringent application
requirements in this voltage range.
IDK02G65C5
1
2
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
1)
Qualified according to JEDEC for target applications
2)
Breakdown voltage tested at 4.5 mA
Optimized for high temperature operation
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Benefits
Applications
Table 1
Key Performance Parameters
Parameter
Value
Unit
V
DC
650
V
Q
C
(V
R
= 400 V)
4
nC
E
C
(V
R
= 400 V)
0.7
µJ
I
F
(T
C
< 155°C)
2
A
Table 2
Pin 1
C
Pin Definition
Pin 2
Pin 3
A
n.a.
Package
PG-TO263-2
Marking
D0265C5
Related links
www.infineon.com/sic
Type / ordering Code
IDK02G65C5
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time period of 10 ms
Final Data Sheet
2
Rev. 2.1, 2017-08-11
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDK02G65C5
Table of contents
Table of Contents
1
2
3
4
5
6
7
Description .......................................................................................................................................... 2
Maximum ratings ................................................................................................................................ 4
Thermal characteristics ..................................................................................................................... 4
Electrical characteristics ................................................................................................................... 5
Electrical characteristics diagrams .................................................................................................. 6
Simplified forward characteristics model ........................................................................................ 8
Package outlines ................................................................................................................................ 9
Final Data Sheet
3
Rev. 2.1, 2017-08-11
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDK02G65C5
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Min.
I
F
–
–
–
–
–
–
–
–
–
-55
Values
Typ.
–
–
–
–
–
–
–
–
–
–
Max.
2
23
22
138
2.6
2.5
650
100
36
175
V
V/ns
W
°C
A²s
A
Unit
Note/Test Condition
T
C
< 155°C,
D
= 1
T
C
= 25°C,
t
p
= 10 ms
T
C
= 150°C,
t
p
= 10 ms
T
C
= 25°C,
t
p
= 10 µs
T
C
= 25°C,
t
p
= 10 ms
T
C
= 150°C,
t
p
= 10 ms
T
j
= 25°C
V
R
= 0..480 V
T
C
= 25°C
–
Continuous forward current
Surge non-repetitive forward current,
I
F,SM
sine halfwave
Non-repetitive peak forward current
i²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
I
F,max
∫
i²dt
V
RRM
dv/dt
P
tot
T
j
;T
stg
3
Table 4
Parameter
Thermal characteristics
Thermal characteristics TO-263-2
Symbol
Min.
R
thJC
R
thJA
–
–
–
Values
Typ.
2.6
–
35
Max.
4.2
62
–
K/W
Unit
–
SMD version, device on
PCB, minimal footprint
SMD version, device on
1)
PCB, 6 cm² cooling area
Note/Test Condition
Thermal resistance, junction-case
Thermal resistance, junction-
1)
ambient
1) Device on 40 mm * 40 mm * 1.5 mm one layer epoxy PCB FR4 with 6 cm² copper area (thickness 70 µm) for
cathode connection, PCB is vertical without air stream cooling.
Final Data Sheet
4
Rev. 2.1, 2017-08-11
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