StrongIRFET™
IRFR7740PbF
IRFU7740PbF
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
75V
6.0m
7.2m
87A
G
S
max
I
D
D
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
G
Gate
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tube
75
S
G
D-Pak
IRFR7740PbF
G
S
D
I-Pak
IRFU7740PbF
D
Drain
S
Source
Base part number
IRFR7740PbF
IRFU7740PbF
Package Type
D-Pak
I-Pak
Orderable Part Number
IRFR7740PbF
IRFR7740TRPbF
IRFU7740PbF
RDS(on), Drain-to -Source On Resistance (m
)
20
ID = 52A
15
100
80
ID, Drain Current (A)
20
60
10
T J = 125°C
40
5
T J = 25°C
0
0
5
10
15
20
0
25
50
75
100
125
150
175
VGS, Gate -to -Source Voltage (V)
T C , Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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© 2014 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
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November 5, 2014
Absolute Maximum Rating
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
Symbol
Parameter
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient (PCB Mount)
R
JA
Junction-to-Ambient
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
IRFR/U7740PbF
Max.
87
62
330
140
0.95
± 20
-55 to + 175
300
Max.
160
242
See Fig 15, 16, 23a, 23b
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
mJ
A
mJ
Units
°C/W
Units
A
W
W/°C
V
°C
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
51
––– mV/°C Reference to 25°C, I
D
= 1mA
6.0
7.2
m V
GS
= 10V, I
D
= 52A
7.0 –––
V
GS
= 6.0V, I
D
= 26A
––– 3.7
V V
DS
= V
GS
, I
D
= 100µA
––– 1.0
V
DS
=75 V, V
GS
= 0V
µA
––– 150
V
DS
=75V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
2.2 –––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 120µH, R
G
= 50, I
AS
= 52A, V
GS
=10V.
I
SD
52A, di/dt
570A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
When
mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 22A, V
GS
=10V
2
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© 2014 International Rectifier
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November 5, 2014
IRFR/U7740PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
84
20
26
58
10
36
55
30
4430
370
230
340
440
Typ.
–––
–––
–––
12
35
40
45
61
2.3
Max. Units
Conditions
–––
S V
DS
= 25V, I
D
= 52A
126
I
D
= 52A
–––
V
DS
= 38V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 38V
–––
I
D
= 52A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
87
A
330
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 52A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
= 52A,V
DS
= 75V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 52A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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© 2014 International Rectifier
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November 5, 2014
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFR/U7740PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
BOTTOM
4.5V
4.5V
10
10
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ID = 52A
V GS = 10V
ID, Drain-to-Source Current (A)
100
10
T J = 175°C
T J = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
ID= 52A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 60V
VDS= 38V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2014 International Rectifier
Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
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November 5, 2014
1000
IRFR/U7740PbF
100
100
TJ = 175°C
1msec
100µsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
10
TJ = 25°C
1
OPERATION
IN THIS
AREA
LIMITED BY
R DS(on)
10msec
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
1
V GS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V SD, Source-to-Drain Voltage (V)
0.01
10
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.9
95
Id = 1.0mA
0.8
0.7
0.6
90
Energy (µJ)
0.5
0.4
0.3
85
80
0.2
0.1
75
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
0.0
-10
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m)
Fig 12.
Typical C
oss
Stored Energy
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
11.0
10.0
9.0
8.0
7.0
6.0
0
50
100
150
200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2014 International Rectifier
Submit Datasheet Feedback
November 5, 2014
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