Chip Schottky Barrier Rectifier
Comchip
SMD Diode Specialist
CDBD8060-G Thru. CDBD8100-G
Reverse Voltage: 60 to 100 Volts
Forward Current: 8.0 Amp
RoHS Device
Features
-
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
TO-263/D2PAK
-
Low profile surface mounted application in order to
optimize board space.
0.059(1.50)
0.031(0.80)
0.413(10.50)
0.394(10.00)
0.185(4.70)
0.169(4.30)
0.055(1.40)
0.047(1.20)
-
Low power loss, high efficiency.
-
High current capability, low forward voltage drop.
-
High surge capability.
-
Guardring for overvoltage protection.
-
Ultra high-speed switching.
-
Silicon epitaxial planar chip, metal silicon junction.
-
Lead-free parts meet environmental standards of
MIL-STD-19500
/228
4
0.370(9.40)
0.327(8.30)
1
0.114(5.30)
0.098(4.40)
2
3
0.063(1.60)
0.055(1.30)
0.024(0.60)
0.014(0.35)
Mechanical data
-
Epoxy: U/L 94-V0 rate flame retardant.
-
Case: TO-263/D2PAK, Transfer Molded.
-
Terminals: Solderable per MIL-STD-202,
method 208.
2=4
0.205(5.20)
0.189(4.80)
0.106(2.70)
0.091(2.30)
Dimensions in inches and
(millimeters)
-
Polarity: As marked.
-
Weunting Position: Any
-
Weight:1.46 gram(approx.).
3
Maximum Ratings
(At Ta=25
O
C, unless otherwise noted)
Symbol
V
RRM
V
RMS
V
DC
I
O
V
F
I
FSM
I
R
I
R
R
θJC
T
J
T
STG
0.75
175
5.0
50
4.0
-55 to +150
-55 to +150
CDBD
8060-G
60
42
60
8.0
0.85
CDBD
8100-G
100
70
100
Parameter
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Forward rectified current (See fig. 1)
Maximum forward voltage at I
O
Forward surge current, 8.3ms single half sine-wave superimposed on
rated load (JEDEC method)
Maximum Reverse current at 25°C per leg (Note1)
Maximum Reverse current at 100°C per leg (Note1)
Typical Thermal resistance junction to case Per Leg
Operating temperature range
Storage temperature range
Notes: 1. Pulse Test: 300µS pulse width, 1% duty cycle.
Unit
V
V
V
A
V
A
mA
mA
°C/W
°C
°C
REV:A
QW-BB047
Page 1
Comchip Technology CO., LTD.
Chip Schottky Barrier Rectifier
Comchip
SMD Diode Specialist
RATING AND CHARACTERISTIC CURVES (CDBD8060-G Thru. CDBD8100-G)
FIG.1- Forward Derating Curve
FIG.2-Peak Forward Surge Current
9
Average Firward Rectified Current
,(A)
Peak Forward Surge Current
,(A)
300
250
200
150
100
50
0
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100 120 140 160 180 200
1
10
Number of Cycles at 60Hz
100
Case Temperature, (°C)
FIG.3-Typical Forward Characteristic Per Leg
100
10
FIG.4-Typical Reverse Characteristics
T
J
=125
°C
Instantaneous Reverse Current, (mA)
Instantaneous Forward Current,
(
A
)
1.0
CDBD8060-G
10
CDBD8100-G
T
J
=75
°C
0.1
1.0
0.01
T
J
=25
°C
CDBD8060-G
CDBD8100-G
0.1
0.1
0.3
0.5
0.7
0.9
1.1
0.001
0
20
40
60
80
100
120
140
Instantaneous Forward Voltage, ( V )
Peraent of Rated Voltage Peak Reverse Voltage, (%)
REV:A
QW-BB047
Page 2
Comchip Technology CO., LTD.
Microchip MCU
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