TS3002
A 1V/1µA Easy-to-Use Silicon Oscillator/Timer
FEATURES
Ultra Low Supply Current: 1µA at 25kHz
Supply Voltage Operation: 0.9V to 1.8V
Programmable Frequency Range:
o
5.2kHz
≤
FOUT
≤
90kHz (BOOST = GND)
o
5.2kHz
≤
FOUT
≤
290kHz (BOOST = VDD)
FOUT Period Drift: 0.044%/°C
PWMOUT Duty Cycle Range: 12% to 90%
Single Resistor and Capacitor Set Output
Frequency
Output Driver Resistance: 160Ω
DESCRIPTION
The TS3002 is the industry’s first and only single-
supply CMOS oscillator fully specified to operate at
1V while consuming a 1µA supply current at an
output frequency of 25kHz. This oscillator is compact,
easy-to-use, and versatile. Optimized for ultra-long
life, battery-powered applications, the TS3002 is the
first oscillator in the “NanoWatt Analog™” high-
performance analog integrated circuits portfolio. The
TS3002 can operate from single-supply voltages from
0.9V to 1.8V.
Requiring only a resistor and a capacitor to set the
output frequency, the TS3002 represents a 66%
reduction in pcb area and a factor-of-10 reduction in
power consumption over other CMOS-based
integrated circuit oscillators. When compared against
industry-standard 555-timer-based products, the
TS3002 offers up to 93% reduction in pcb area and
four orders of magnitude lower power consumption.
The TS3002 is fully specified over the -40°C to +85°C
temperature range and is available in a low-profile, 8-
pin 2x2mm TDFN package with an exposed back-
side paddle.
APPLICATIONS
Portable and Battery-Powered Equipment
Low-Parts-Count Nanopower Oscillator
Compact Nanopower Replacement for Crystal and
Ceramic Oscillators
Nanopower Pulse-width Modulation Control
Nanopower Pulse-position Modulation Control
Nanopower Clock Generation
Nanopower Sequential Timing
TYPICAL APPLICATION CIRCUIT
Table 1: FOUT vs R
SET
, C
SET
= 7.9pF
R
SET
(MΩ)
1
2.49
4.32
6.81
9.76
FOUT (kHz)
106
43
25
16
11
Table 2: FOUT vs C
SET
, R
SET
= 4.32MΩ
C
SET
(pF)
5
7.9
10
15
20
FOUT (kHz)
39
25
19
13
10
Page 1
© 2014 Silicon Laboratories, Inc. All rights reserved.
TS3002
ABSOLUTE MAXIMUM RATINGS
V
DD
to GND.................................................................... -0.3V to +2V
V
CNTRL
to GND ............................................................... -0.3V to +2V
RSET to GND................................................................ -0.3V to +2V
CSET to GND................................................................ -0.3V to +2V
FOUT, PWMOUT to GND ............................................. -0.3V to +2V
Short Circuit Duration FOUT, PWMOUT to GND or V
DD
.................................................................................. Continuous
Continuous Power Dissipation (T
A
= +70°C)
8-Pin TDFN (Derate at 23.8mW/°C above +70°C) ....... 1951mW
Operating Temperature Range ................................. -40°C to +85°C
Storage Temperature Range .................................. -65°C to +150°C
Lead Temperature (Soldering, 10s)...................................... +300°C
Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections
of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and
lifetime.
PACKAGE/ORDERING INFORMATION
ORDER NUMBER
PART
CARRIER QUANTITY
MARKING
TS3002ITD822
AAH
TS3002ITD822T
Tape
& Reel
Tape
& Reel
-----
3000
Lead-free Program:
Silicon Labs supplies only lead-free packaging.
Consult Silicon Labs for products specified with wider operating temperature ranges.
Page 2
TS3002 Rev. 1.0
TS3002
ELECTRICAL CHARACTERISTICS
V
DD
= 1V, V
CNTRL
= V
DD
, V
BOOST
= 0V, R
SET
= 4.32MΩ, C
SET
= 7.9pF, R
LOAD(FOUT)
= Open Circuit, C
LOAD(FOUT)
= 0pF, C
LOAD(PWM)
= 0pF unless
otherwise noted. Values are at T
A
= 25°C unless otherwise noted. See Note 1.
PARAMETER
Supply Voltage
SYMBOL
V
DD
CONDITIONS
MIN
0.9
-40°C
≤
T
A
≤
85°C
V
CNTRL
= 0.15 x V
DD
Supply Current
I
DD
V
BOOST
= V
DD
V
BOOST
= V
DD,
V
CNTRL
= 0.15 x V
DD
2.1
-40°C
≤
T
A
≤
85°C
2.16
-40°C
≤
T
A
≤
85°C
3.6
-40°C
≤
T
A
≤
85°C
-40°C
≤
T
A
≤
85°C
V
BOOST
= V
DD
FOUT Period Line
Regulation
FOUT Period
Temperature Coefficient
∆t
FOUT
/V
∆t
FOUT
/∆T
1V
≤
V
DD
≤
1.8V
-40°C
≤
T
A
≤
85°C
V
BOOST
= V
DD
37
34.7
36
33
40.6
39.5
1.3
-1.6
0.044
0.086
8.9
49.3
90.5
8.5
50.4
91.2
8.6
7.9
0.08
0.3
25
-40°C
≤
T
A
≤
85°C
(V
DD
- V
CNTRL
), 0.9V < V
DD
< 1.8V
(V
DD
- V
CNTRL
), 0.9V < V
DD
< 1.8V
(V
DD
– V
BOOST
), 0.9V < V
DD
< 1.8V
0.9V < V
DD
< 1.8V
375
131
77
77
10
I
OH
= 1mA
160
45
80
%/V
%/°C
13
54
97
12.5
54
96
TYP
1
1
MAX
1.8
1.5
2.8
3.7
5.4
3.2
4.8
5.3
7.3
44
45.6
43
48
UNITS
V
µA
FOUT Period
t
FOUT
µs
PWMOUT Duty Cycle
DC(PWMOUT)
V
BOOST
= V
DD
V
CNTRL
= 0.03 x V
DD
V
CNTRL
= 0.15 x V
DD
V
CNTRL
= 0.27 x V
DD
V
CNTRL
= 0.03 x V
DD
V
CNTRL
= 0.15 x V
DD
V
CNTRL
= 0.27 x V
DD
See Note 2, C
L
= 15pF
See Note 2, C
L
= 15pF
See Note 3
V
BOOST
= V
DD
4.5
44
83
4.5
47
86
%
FOUT, PWMOUT
Rise Time
FOUT, PWMOUT
Fall Time
FOUT Jitter
RSET Pin Voltage
CNTRL Output Current
PWMOUT Enable
PWMOUT Disable
BOOST Enable
BOOST Disable
BOOST Input Current
High Level Output
Voltage, FOUT and
PWMOUT
Low-level Output
Voltage, FOUT and
PWMOUT
t
RISE
t
FALL
ns
ns
%
V
nA
mV
mV
mV
mV
nA
mV
V(RSET)
I
CNTRL
V
PWM_EN
V
PWM_DIS
V
IH
V
IL
I
BOOST
V
DD
- V
OH
V
OL
I
OL
= 1mA
140
mV
Note 1:
All devices are 100% production tested at T
A
= +25°C and are guaranteed by characterization for T
A
= T
MIN
to T
MAX
, as specified.
Note 2:
Output rise and fall times are measured between the 10% and 90% of the V
DD
power-supply voltage levels. The specification is based
on lab bench characterization and is not tested in production.
Note 3:
Timing jitter is the ratio of the peak-to-peak variation of the period to the mean of the period. The specification is based on lab bench
characterization and is not tested in production.
TS3002 Rev. 1.0
Page 3
TS3002
TYPICAL PERFORMANCE CHARACTERISTICS
V
DD
= 1V, V
CNTRL
= V
DD
, V
BOOST
= 0V, R
SET
= 4.32MΩ, C
SET
= 7.9pF, R
LOAD(FOUT)
= Open Circuit, C
LOAD(FOUT)
= 5pF, unless otherwise noted.
Values are at T
A
= 25°C unless otherwise noted.
Supply Current vs FOUT Period
2.5
BOOST = GND
SUPPLY CURRENT - µA
SUPPLY CURRENT - µA
2
7.1
8.5
BOOST = V
DD
Supply Current vs FOUT Period
5.7
1.5
4.3
1
2.9
1.5
0.5
0
40
80
120
160
200
PERIOD - µs
Supply Current vs C
LOAD(FOUT)
2
BOOST = GND
SUPPLY CURRENT - µA
SUPPLY CURRENT - µA
1.8
1.6
1.4
1.2
1
0.8
0
10
20
C
LOAD
- pF
Supply Current vs Temperature
1.5
BOOST = GND
SUPPLY CURRENT - µA
1.36
SUPPLY CURRENT - µA
30
40
0
40
80
120
160
200
PERIOD - µs
Supply Current vs C
LOAD(FOUT)
3.2
BOOST = V
DD
3
2.8
2.6
2.4
2.2
2
0
10
20
C
LOAD
- pF
Supply Current vs Temperature
3.2
BOOST = V
DD
2.88
30
40
1.22
2.56
1.08
2.24
1.92
0.94
0.8
-40
-15
10
35
60
85
1.6
-40
-15
10
35
60
85
TEMPERATURE - ºC
TEMPERATURE - ºC
Page 4
TS3002 Rev. 1.0
TS3002
TYPICAL PERFORMANCE CHARACTERISTICS
V
DD
= 1V, V
CNTRL
= V
DD
, V
BOOST
= 0V, R
SET
= 4.32MΩ, C
SET
= 7.9pF, R
LOAD(FOUT)
= Open Circuit, C
LOAD(FOUT)
= 5pF, unless otherwise noted.
Values are at T
A
= 25°C unless otherwise noted.
FOUT Period vs Temperature
43
BOOST = GND
42.5
42
PERIOD - µs
41.5
41
40.5
40
39.5
-40
-15
10
35
60
85
PERIOD - µs
41
40.5
40
39.5
39
38.5
38
-40
-15
10
35
60
85
TEMPERATURE - ºC
FOUT Period vs Supply Voltage
41.2
BOOST = GND
39.8
41
PERIOD - µs
PERIOD - µs
39.6
39.4
39.2
39
40.4
0.9
1.05
1.2
1.35
1.5
1.65
1.8
38.8
0.9
1.05
1.2
1.35
1.5
1.65
1.8
40
BOOST = V
DD
TEMPERATURE - ºC
FOUT Period vs Supply Voltage
41.5
BOOST = V
DD
FOUT Period vs Temperature
40.8
40.6
SUPPLY VOLTAGE - Volt
Period vs R
SET
200
BOOST = GND
160
PERIOD - µs
PERIOD - µs
160
200
SUPPLY VOLTAGE - Volt
Period vs R
SET
BOOST = V
DD
120
120
80
80
40
40
0
0
4
8
12
16
20
0
0
4
8
12
16
20
R
SET
- MΩ
R
SET
- MΩ
TS3002 Rev. 1.0
Page 5
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