END OF LIFE
IRF7452QPbF
l
l
l
l
l
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Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
HEXFET
®
Power MOSFET
V
DSS
100V
1
2
3
4
8
7
R
DS(on)
max
0.060Ω
A
A
D
D
D
D
I
D
4.5A
S
S
S
G
Description
These HEXFET
®
Power MOSFET's in SO-8
package utilize the lastest processing techniques
to achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety
of power applications. This surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
Base part number Orderable part number
IRF7452QTRPbF
IRF7452QPbF
Package
Type
SO-8
SO-8
Standard Pack
Form
Tape and Reel
Tube
6
5
Top View
SO-8
Quantity
4000
95
EOL
Notice
Replacement Part Number
IRF7452QPbF
EOL 529
Please search the EOL part number on IR’s website for
guidance
EOL 529
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
4.5
3.6
36
2.5
0.02
± 30
3.5
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l
Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input
with Passive Reset Forward Converter Primary
Notes
through
are on page 8
www.irf.com
12/19/14
1
IRF7452QPbF
END OF LIFE
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
100
–––
–––
3.0
–––
–––
–––
–––
Min.
3.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
Typ.
–––
33
7.3
16
9.5
11
16
13
930
300
84
1370
170
280
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
0.060
Ω
V
GS
= 10V, I
D
= 2.7A
5.5
V
V
DS
= V
GS
, I
D
= 250μA
25
V
DS
= 100V, V
GS
= 0V
μA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 24V
nA
-100
V
GS
= -24V
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 2.7A
50
I
D
= 2.7A
11
nC
V
DS
= 80V
24
V
GS
= 10V,
–––
V
DD
= 50V
–––
I
D
= 2.7A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 80V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
200
4.5
0.25
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Typ.
–––
Max.
50
Units
°C/W
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
77
270
2.3
A
36
1.3
120
410
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.7A
di/dt = 100A/μs
D
S
2
www.irf.com
END OF LIFE
IRF7452QPbF
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
10
1
1
5.0V
0.1
5.0V
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.01
0.1
0.1
0.1
20μs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 4.5A
I
D
, Drain-to-Source Current (A)
2.0
10
T
J
= 150
°
C
1.5
1
T
J
= 25
°
C
1.0
0.5
0.1
5.0
V DS = 50V
20μs PULSE WIDTH
6.0
7.0
8.0
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF7452QPbF
100000
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd ,
SHORTED
C rss
C oss = C ds + C gd
= C gd
END OF LIFE
20
I
D
= 2.7A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
V
GS
, Gate-to-Source Voltage (V)
C ds
16
10000
C, Capacitance(pF)
12
1000
Ciss
Coss
8
100
Crss
4
10
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
I
D
, Drain Current (A)
100
10us
10
100us
1ms
1
10ms
T
J
= 150
°
C
1
T
J
= 25
°
C
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
END OF LIFE
IRF7452QPbF
V
DS
R
D
5.0
4.0
V
GS
R
G
I
D
, Drain Current (A)
D.U.T.
+
3.0
-
V
DD
10V
2.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
1.0
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
t
1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
t
2
Thermal Response (Z
thJA
)
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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