PD - 95728A
IRF9910PbF
Applications
l
Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
l
Lead-Free
HEXFET
®
Power MOSFET
V
DSS
20V
Q1 13.4m
:
@V
GS
= 10V
Q2 9.3m
:
@V
GS
= 10V
R
DS(on)
max
I
D
10A
12A
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
6
*
6
*
'
'
'
'
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
10
8.3
83
2.0
1.3
0.016
-55 to + 150
W/°C
°C
Q1 Max.
20
± 20
Q2 Max.
Units
V
12
9.9
98
W
A
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
fg
Notes
through
are on page 10
www.irf.com
1
07/23/08
IRF9910PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Q1&Q2
Q1
Q2
Q1
Q2
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
20
–––
–––
–––
–––
–––
–––
1.65
–––
–––
–––
–––
–––
–––
19
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.0061
0.014
10.7
14.6
7.4
9.1
–––
-4.9
-5.0
–––
–––
–––
–––
–––
–––
7.4
15
2.6
4.3
0.85
1.4
2.5
5.4
1.5
3.9
3.4
6.8
4.0
8.7
6.3
8.3
10
14
9.2
15
4.5
7.5
900
1860
290
600
140
310
Max.
–––
–––
–––
13.4
18.3
9.3
11.3
2.55
–––
–––
1.0
100
100
-100
–––
–––
11
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Min.
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
11
16
3.1
4.9
Max.
2.5
83
98
1.0
1.0
17
24
4.7
7.3
Units
A
A
V
ns
nC
Units
V
V/°C
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 8.3A
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 9.8A
V
DS
= V
GS
, I
D
= 250µA
R
DS(on)
Static Drain-to-Source On-Resistance
mΩ
e
e
e
e
V
mV/°C
µA
nA
S
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 8.3A
V
DS
= 10V, I
D
= 9.8A
nC
Q1
V
DS
= 10V
V
GS
= 4.5V, I
D
= 8.3A
Q2
V
DS
= 10V
V
GS
= 4.5V, I
D
= 9.8A
nC
V
DS
= 10V, V
GS
= 0V
Q1
V
DD
= 16V, V
GS
= 4.5V
I
D
= 8.3A
ns
Q2
V
DD
= 16V, V
GS
= 4.5V
I
D
= 9.8A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
E
AS
Avalanche Current
I
AR
Diode Characteristics
Param eter
d
Q1 Max.
33
8.3
Q2 Max.
26
9.8
Conditions
Units
mJ
A
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Ã
Reverse Recovery Time
Reverse Recovery Charge
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 8.3A, V
GS
= 0V
T
J
= 25°C, I
S
= 9.8A, V
GS
= 0V
Q1 T
J
= 25°C, I
F
= 8.3A,
V
DD
= 10V, di/dt = 100A/µs
Q2 T
J
= 25°C, I
F
= 9.8A,
V
DD
= 10V, di/dt = 100A/µs
D
e
e
e
S
2
e
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Typical Characteristics
Q1 - Control FET
10000
IRF9910PbF
Q2 - Synchronous FET
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
10000
TOP
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
1000
100
10
1
0.1
2.5V
BOTTOM
ID, Drain-to-Source Current (A)
1000
100
10
1
2.5V
BOTTOM
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.1
1
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
Tj = 25°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
10000
Fig 2.
Typical Output Characteristics
10000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1000
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
TOP
1000
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
1
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
100
10
2.5V
1
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
100
ID, Drain-to-Source Current
(Α)
T = 150°C
J
10
ID, Drain-to-Source Current
(Α)
100
10
T = 25°C
J
1
T = 25°C
J
1
T = 150°C
J
V
= 10V
DS
≤
60µs PULSE WIDTH
0.1
2
3
4
5
6
V
= 10V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
www.irf.com
3
IRF9910PbF
Q1 - Control FET
10000
VGS = 0V,
C
iss
rss
oss
=C
=C
=C
gs
f = 1 MHZ
+ C
gd
, C
ds
SHORTED
Typical Characteristics
Q2 - Synchronous FET
100000
VGS = 0V,
f = 1 MHZ
C
=C
+ C , C
SHORTED
iss
gs
gd
ds
C
rss
oss
=C
=C
gd
ds
+C
gd
C, Capacitance(pF)
gd
ds
+C
gd
C, Capacitance(pF)
C
C
10000
C
1000
C
iss
C
iss
C
oss
1000
C
oss
C
rss
C
rss
100
1
10
100
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Capacitance Vs.Drain-to-Source Voltage
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 8.
Typical Capacitance Vs.Drain-to-Source Voltage
VGS, Gate-to-Source Voltage (V)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
5
10
15
20
I = 9.8A
D
V = 16V
DS
V = 10V
DS
6.0
I = 8.3A
D
5.0
4.0
3.0
2.0
1.0
0.0
V = 16V
DS
V = 10V
DS
0 1 2 3 4 5 6 7 8 9 10
QG Total Gate Charge (nC)
Fig. 9.
Gate-to-Source Voltage vs Typical Gate Charge
QG Total Gate Charge (nC)
Fig. 10.
Gate-to-Source Voltage vs Typical Gate Charge
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
1000
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
100
10
1
0.1
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 11.
Maximum Safe Operating Area
100
10
1
0.1
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 12.
Maximum Safe Operating Area
100µsec
1msec
10msec
T = 25°C
A
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
T = 25°C
A
Tj = 150°C
Single Pulse
4
www.irf.com
Typical Characteristics
Q1 - Control FET
= 10A
D
V
= 10V
GS
I
IRF9910PbF
Q2 - Synchronous FET
I
= 12A
D
V
= 10V
GS
1.0
R DS(on) , Drain-to-Source On Resistance
R DS(on) , Drain-to-Source On Resistance
1.5
1.5
(Normalized)
(Normalized)
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160
TJ , Junction Temperature (°C)
0.5
-60 -40 -20 0 20 40 60 80 100120140160
TJ , Junction Temperature (°C)
Fig 13.
Normalized On-Resistance
vs. Temperature
100
ISD, Reverse Drain Current (A)
Fig 14.
Normalized On-Resistance
vs. Temperature
100
ISD, Reverse Drain Current (A)
T = 150°C
J
T = 150°C
J
10
10
T = 25°C
J
T = 25°C
J
1
1
V
= 0V
GS
V
= 0V
GS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 15.
Typical Source-Drain Diode Forward Voltage
Fig 16.
Typical Source-Drain Diode Forward Voltage
, Drain-to -Source On Resistance (m)
Ω
DS(on)
R DS(on), Drain-to -Source On Resistance (m)
Ω
40
35
30
25
20
15
10
5
0
2
3
4
5
6
7
8
9
10
TJ = 25°C
T = 125°C
J
I = 10A
D
25
ID = 12A
20
15
T = 125°C
J
10
T = 25°C
J
5
R
0
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
Fig 17.
Typical On-Resistance vs. Gate Voltage
Fig 18.
Typical On-Resistance vs. Gate Voltage
VGS, Gate -to -Source Voltage (V)
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