Freescale Semiconductor
Technical Data
Document Number: MRFE6S9125N
Rev. 0, 10/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these de-
vices make them ideal for large-signal, common-source amplifier applications
in 28 volt base station equipment.
N - CDMA Application
•
Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
DD
= 28 Volts,
I
DQ
= 950 mA, P
out
= 27 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 45.7 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 700 mA,
P
out
= 60 Watts Avg., Full Frequency Band (865 - 960 MHz or 920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.8% rms
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 700 mA, P
out
=
125 Watts, Full Frequency Band (920 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
MRFE6S9125NR1
MRFE6S9125NBR1
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +66
- 0.5, +12
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
Symbol
R
θJC
Value
(2,3)
0.44
0.45
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRFE6S9125NR1 MRFE6S9125NBR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 950 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.74 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.9
64
350
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.05
2.1
2.86
0.24
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 27 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally input matched.
(continued)
G
ps
η
D
ACPR
IRL
19
29
—
—
20.2
31
- 45.7
- 18
24
—
- 44
-9
dB
%
dBc
dB
MRFE6S9125NR1 MRFE6S9125NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 700 mA,
P
out
= 60 W Avg., 920 - 960 MHz, EDGE Modulation
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
(f = 880 MHz)
G
ps
η
D
EVM
SR1
SR2
G
ps
η
D
IRL
P1dB
—
—
—
—
—
—
—
—
—
20
40
1.8
- 63
- 78
19
62
- 12
125
—
—
—
—
—
—
—
—
—
dB
%
% rms
dBc
dBc
dB
%
dB
W
Typical CW Performances
(In Freescale GSM Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 700 mA, P
out
= 125 W, 920 - 960 MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 125 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 35 MHz Bandwidth @ P
out
= 27 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
VBW
—
10
—
MHz
G
F
ΔG
ΔP1dB
—
—
—
0.93
0.011
0.205
—
—
—
dB
dB/°C
dBm/°C
MRFE6S9125NR1 MRFE6S9125NBR1
RF Device Data
Freescale Semiconductor
3
R1
V
BIAS
+
C10
RF
INPUT
C9
+
C8
+
C7
R2
C6
L1
Z1
C1
C2
C3
C5
Z2
Z3
Z4
Z5
Z6
Z7
C4
Z8
C11
DUT
C12
C13
C14
Z9
Z10
L2
Z11
Z12
Z13
Z14
C18
C19
+
C20
+
C21
+
C22
V
SUPPLY
C23
Z15
Z16
RF
OUTPUT
Z17
C17
C15
C16
Z1, Z17
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.200″
1.060″
0.382″
0.108″
0.200″
0.028″
0.236″
0.050″
0.238″
x 0.080″
x 0.080″
x 0.220″
x 0.220″
x 0.420″
x 0.620″
x 0.620″
x 0.620″
x 0.620″
Microstrip
Microstrip
Microstrip
Microstrip
x 0.620″ Taper
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.057″ x 0.620″ Microstrip
0.119″ x 0.620″ Microstrip
0.450″ x 0.220″ Microstrip
0.061″ x 0.220″ Microstrip
0.078″ x 0.220″ Microstrip
0.692″ x 0.080″ Microstrip
0.368″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRFE6S9125NR1(NBR1) Test Circuit Schematic
Table 6. MRFE6S9125NR1(NBR1) Test Circuit Component Designations and Values
Part
C1
C2
C3, C15
C4, C5
C6, C18, C19
C7, C8
C9, C23
C10
C11, C12
C13, C14
C16
C17
C20, C21
C22
L1
L2
R1
R2
Description
20 pF Chip Capacitor
6.2 pF Chip Capacitor
0.8 - 8.0 pF Variable Capacitors, Gigatrim
11 pF Chip Capacitors
0.56
μF,
50 V Chip Capacitors
47
μF,
16 V Tantalum Capacitors
47 pF Chip Capacitors
100
μF,
50 V Electrolytic Capacitor
12 pF Chip Capacitors
5.1 pF Chip Capacitors
0.3 pF Chip Capacitor
39 pF Chip Capacitor
22
μF,
35 V Tantalum Capacitors
470
μF,
63 V Electrolytic Capacitor
7.15 nH Inductor
8.0 nH Inductor
15
Ω,
1/3 W Chip Resistor
560 kΩ, 1/4 W Resistor
Part Number
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ATC700B390FT500XT
T491X226K035AT
EKME630ELL471MK25S
1606 - 7J
A03T
CRCW121015R0FKEA
CRCW12065600FKEA
ATC
ATC
Johanson
ATC
Kemet
Kemet
ATC
Multicomp
ATC
ATC
ATC
ATC
Kemet
Multicomp
CoilCraft
CoilCraft
Vishay
Vishay
Manufacturer
MRFE6S9125NR1 MRFE6S9125NBR1
4
RF Device Data
Freescale Semiconductor
C8 C7
C9
V
GG
C10
C1
CUT OUT AREA
L1
C2
C5
C3
C6
C19
C20 C21
C22
R2
R1
V
DD
C18
C14
L2
C23
C17
C4
C11
C13
C12
C15
C16
900 MHz
TO272 WB
Rev. 0
Figure 2. MRFE6S9125NR1(NBR1) Test Circuit Component Layout
MRFE6S9125NR1 MRFE6S9125NBR1
RF Device Data
Freescale Semiconductor
5
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