Bipolar Transistors - BJT 6A 40V 65W NPN
参数名称 | 属性值 |
产品种类 Product Category | Bipolar Transistors - BJT |
制造商 Manufacturer | ON Semiconductor(安森美) |
RoHS | No |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-220-3 |
Transistor Polarity | NPN |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 40 V |
Collector- Base Voltage VCBO | 40 V |
Emitter- Base Voltage VEBO | 5 V |
Collector-Emitter Saturation Voltage | 1.5 V |
Maximum DC Collector Current | 6 A |
Gain Bandwidth Product fT | 3 MHz |
最大工作温度 Maximum Operating Temperature | + 150 C |
Continuous Collector Current | 6 A |
DC Collector/Base Gain hfe Min | 30 |
高度 Height | 9.28 mm (Max) |
长度 Length | 10.28 mm (Max) |
最小工作温度 Minimum Operating Temperature | - 65 C |
系列 Packaging | Tube |
Pd-功率耗散 Pd - Power Dissipation | 65 W |
工厂包装数量 Factory Pack Quantity | 50 |
宽度 Width | 4.82 mm (Max) |
单位重量 Unit Weight | 0.211644 oz |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved