IRG7PH28UD1PbF
IRG7PH28UD1MPbF
C
V
CES
= 1200V
I
C
= 15A, T
C
= 100°C
G
E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
Low V
CE (ON)
trench IGBT technology
Low switching losses
Square RBSOA
Ultra-low V
F
diode
1300Vpk repetitive transient capacity
100% of the parts tested for I
LM
Positive V
CE (ON)
temperature co-efficient
Tight parameter distribution
Lead-free package
Benefits
Device optimized for induction heating and soft switching
applications
High efficiency due to low V
CE(ON)
, low switching losses and
ultra-low V
F
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Low EMI
Base part number
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
Package Type
TO-247AC
TO-247AD
T
J(MAX)
= 150°C
V
CE(ON)
typ. = 1.95V
n-channel
G
G
C
G
IRG7PH28UD1PbF
TO-247AC
E
C
G
E
IRG7PH28UD1MPbF
TO-247AD
G
Gate
C
Collector
E
Emitter
Standard Pack
Form
Quantity
Tube
Tube
25
25
Orderable Part Number
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
Absolute Maximum Ratings
V
CES
V
(BR) Transient
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Collector-to-Emitter Voltage
Repetitive Transient Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
1300
30
15
100
60
30
15
60
±30
115
46
-55 to +150
300
(0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
1
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© 2012 International Rectifier
January 8, 2013
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
Parameter
Min.
–––
–––
–––
–––
Max. Units
—
V
—
V/°C
2.30
V
—
6.0
V
—
S
100
µA
—
1.2
V
—
±100
nA
Typ.
–––
–––
0.24
–––
Max.
1.09
1.35
–––
40
Units
°C/W
Thermal Resistance
R
θJC
(IGBT) Junction-to-Case (IGBT)
R
θJC
(Diode) Junction-to-Case (Diode)
R
θCS
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
R
θJA
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Collector-to-Emitter Breakdown Voltage
1200
—
V
(BR)CES
—
1.4
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
1.95
—
2.4
V
GE(th)
Gate Threshold Voltage
3.0
—
gfe
Forward Transconductance
—
13
I
CES
Collector-to-Emitter Leakage Current
—
1.0
—
100
V
FM
Diode Forward Voltage Drop
—
1.1
—
1.0
I
GES
Gate-to-Emitter Leakage Current
—
—
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Total Gate Charge (turn-on)
—
60
Q
g
Q
ge
Gate-to-Emitter Charge (turn-on)
—
10
Gate-to-Collector Charge (turn-on)
—
27
Q
gc
Turn-Off Switching Loss
—
543
E
off
t
d(off)
t
f
E
off
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Turn-Off delay time
Fall time
Turn-Off Switching Loss
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
—
—
—
—
—
—
—
Conditions
V
GE
= 0V, I
C
= 100µA
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 15A, V
GE
= 15V, T
J
= 25°C
I
C
= 15A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 350µA
V
CE
= 50V, I
C
= 15A, PW = 20µs
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
F
= 15A
I
F
= 15A, T
J
= 150°C
V
GE
= ±30V
Max. Units
Conditions
90
I
C
= 15A
nC V
GE
= 15V
15
V
CC
= 600V
40
766
µJ
I
C
= 15A, V
CC
= 600V, V
GE
= 15V
R
G
= 22, L = 1.0mH, T
J
= 25°C
229
—
ns Energy losses include tail & diode
reverse recovery
62
—
939
—
µJ
I
C
= 15A, V
CC
= 600V, V
GE
=15V
R
G
= 22, L = 1.0mH, T
J
= 150°C
Energy losses include tail & diode
272
—
ns
reverse recovery
167
—
1160
—
V
GE
= 0V
pF V
CC
= 30V
55
—
f = 1.0Mhz
30
—
T
J
= 150°C, I
C
= 60A
FULL SQUARE
V
CC
= 960V, Vp
≤
1200V
Rg = 22, V
GE
= +20V to 0V
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 25µH, R
G
= 22.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
is measured at T
J
of approximately 90°C.
FBSOA operating conditions only.
V
GE
= 0V, T
J
= 75°C, PW
≤
10µs.
2
www.irf.com
© 2012 International Rectifier
January 8, 2013
30
25
20
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
120
100
80
Ptot (W)
IC (A)
15
10
5
0
25
50
75
100
125
150
TC (°C)
60
40
20
0
25
50
75
100
125
150
TC (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
4.2
V GE(th), Gate Threshold Voltage
Fig. 2
- Power Dissipation vs.
Case Temperature
100
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
25
50
75
100
IC = 350µA
IC (A)
10
1
125
150
10
100
V CE (V)
1000
10000
TJ , Temperature (°C)
Fig. 3
- Typical Gate Threshold Voltage
vs. Junction Temperature
60
50
40
ICE (A)
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
60
50
V GE = 18V
40
ICE (A)
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
30
20
10
0
0
2
4
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
30
20
10
0
6
8
10
0
2
4
6
8
10
V CE (V)
V CE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
3
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© 2012 International Rectifier
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
January 8, 2013
60
V GE = 18V
50
40
V GE = 15V
V GE = 12V
V GE = 10V
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
100
10
IF (A)
ICE (A)
V GE = 8.0V
30
20
10
0
0
2
4
6
8
10
V CE (V)
1
25°C
150°C
0.1
0.2
0.4
0.6
0.8
1.0
VF (V)
1.2
1.4
1.6
1.8
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 20µs
12
10
8
V CE (V)
Fig. 8
- Typ. Diode Forward Voltage Drop
Characteristics
12
10
ICE = 7.5A
ICE = 15A
ICE = 30A
V CE (V)
8
6
4
2
0
6
4
2
0
5
10
ICE = 7.5A
ICE = 15A
ICE = 30A
15
V GE (V)
20
5
10
V GE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
12
10
8
V CE (V)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
70
60
ICE = 7.5A
ICE = 15A
ICE (A)
50
40
30
20
10
0
6
4
2
0
5
10
ICE = 30A
TJ = 150°C
TJ = 25°C
15
V GE (V)
20
4
5
6
7
8
V GE (V)
9
10
11
12
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
4
www.irf.com
© 2012 International Rectifier
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
January 8, 2013
2000
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
1000
1600
Swiching Time (ns)
tdOFF
Energy (µJ)
1200
EOFF
100
tF
800
400
0
0
5
10
15
IC (A)
20
25
30
10
0
5
10
15
IC (A)
20
25
30
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 1.0mH; V
CE
= 600V, R
G
= 22; V
GE
= 15V
1800
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 150°C; L = 1.0mH; V
CE
= 600V, R
G
= 22; V
GE
= 15V
1000
tdOFF
Swiching Time (ns)
1600
EOFF
Energy (µJ)
1400
100
tF
1200
1000
800
0
20
40
60
80
100
10
0
20
40
60
80
100
RG (
)
Rg (
)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
=
10000
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 150°C; L = 1.0mH; V
CE
= 600V, I
CE
= 15A; V
GE
= 15V
16
V GE, Gate-to-Emitter Voltage (V)
14
12
10
8
6
4
2
0
V CES = 600V
V CES = 400V
1000
Capacitance (pF)
Cies
100
Coes
10
Cres
1
0
100
200
300
V CE (V)
400
500
600
0
10
20
30
40
50
60
70
Q G, Total Gate Charge (nC)
Fig. 17
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
5
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© 2012 International Rectifier
Fig. 18
- Typical Gate Charge vs. V
GE
I
CE
= 15A
January 8, 2013
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